CH430656A - Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial, insbesondere von Silizium - Google Patents

Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial, insbesondere von Silizium

Info

Publication number
CH430656A
CH430656A CH98266A CH98266A CH430656A CH 430656 A CH430656 A CH 430656A CH 98266 A CH98266 A CH 98266A CH 98266 A CH98266 A CH 98266A CH 430656 A CH430656 A CH 430656A
Authority
CH
Switzerland
Prior art keywords
crucible
semiconductor material
free zone
zone melting
particular silicon
Prior art date
Application number
CH98266A
Other languages
German (de)
English (en)
Inventor
Konrad Dr Reuschel
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH430656A publication Critical patent/CH430656A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/912—Replenishing liquid precursor, other than a moving zone

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH98266A 1965-01-29 1966-01-25 Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial, insbesondere von Silizium CH430656A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES95239A DE1254590B (de) 1965-01-29 1965-01-29 Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial, insbesondere von Silicium

Publications (1)

Publication Number Publication Date
CH430656A true CH430656A (de) 1967-02-28

Family

ID=7519234

Family Applications (1)

Application Number Title Priority Date Filing Date
CH98266A CH430656A (de) 1965-01-29 1966-01-25 Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial, insbesondere von Silizium

Country Status (5)

Country Link
US (1) US3454367A (cg-RX-API-DMAC7.html)
BE (1) BE675593A (cg-RX-API-DMAC7.html)
CH (1) CH430656A (cg-RX-API-DMAC7.html)
DE (1) DE1254590B (cg-RX-API-DMAC7.html)
GB (1) GB1081827A (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3876388A (en) * 1968-10-30 1975-04-08 Siemens Ag Method of varying the crystalline structure of or the concentration of impurities contained in a tubular starting crystal or both using diagonal zone melting
DE2658368C2 (de) 1976-12-23 1982-09-23 Degussa Ag, 6000 Frankfurt Schwefel und Phosphor enthaltende Organosiliciumverbindungen, Verfahren zu ihrer Herstellung und ihre Verwendung
US5108720A (en) * 1991-05-20 1992-04-28 Hemlock Semiconductor Corporation Float zone processing of particulate silicon
US5361128A (en) * 1992-09-10 1994-11-01 Hemlock Semiconductor Corporation Method for analyzing irregular shaped chunked silicon for contaminates
JP2922078B2 (ja) * 1993-03-17 1999-07-19 株式会社トクヤマ シリコンロッドの製造方法
US6251182B1 (en) 1993-05-11 2001-06-26 Hemlock Semiconductor Corporation Susceptor for float-zone apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2743200A (en) * 1954-05-27 1956-04-24 Bell Telephone Labor Inc Method of forming junctions in silicon
US2985519A (en) * 1958-06-02 1961-05-23 Du Pont Production of silicon
US3206286A (en) * 1959-07-23 1965-09-14 Westinghouse Electric Corp Apparatus for growing crystals
US2992311A (en) * 1960-09-28 1961-07-11 Siemens Ag Method and apparatus for floatingzone melting of semiconductor rods

Also Published As

Publication number Publication date
BE675593A (cg-RX-API-DMAC7.html) 1966-07-26
US3454367A (en) 1969-07-08
GB1081827A (en) 1967-09-06
DE1254590B (de) 1967-11-23

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