BE675593A - - Google Patents

Info

Publication number
BE675593A
BE675593A BE675593DA BE675593A BE 675593 A BE675593 A BE 675593A BE 675593D A BE675593D A BE 675593DA BE 675593 A BE675593 A BE 675593A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE675593A publication Critical patent/BE675593A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating
    • C30B13/30Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91Downward pulling
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/912Replenishing liquid precursor, other than a moving zone
BE675593D 1965-01-29 1966-01-26 BE675593A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES95239A DE1254590B (de) 1965-01-29 1965-01-29 Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial, insbesondere von Silicium

Publications (1)

Publication Number Publication Date
BE675593A true BE675593A (xx) 1966-07-26

Family

ID=7519234

Family Applications (1)

Application Number Title Priority Date Filing Date
BE675593D BE675593A (xx) 1965-01-29 1966-01-26

Country Status (5)

Country Link
US (1) US3454367A (xx)
BE (1) BE675593A (xx)
CH (1) CH430656A (xx)
DE (1) DE1254590B (xx)
GB (1) GB1081827A (xx)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3876388A (en) * 1968-10-30 1975-04-08 Siemens Ag Method of varying the crystalline structure of or the concentration of impurities contained in a tubular starting crystal or both using diagonal zone melting
DE2658368C2 (de) 1976-12-23 1982-09-23 Degussa Ag, 6000 Frankfurt Schwefel und Phosphor enthaltende Organosiliciumverbindungen, Verfahren zu ihrer Herstellung und ihre Verwendung
US5108720A (en) * 1991-05-20 1992-04-28 Hemlock Semiconductor Corporation Float zone processing of particulate silicon
US5361128A (en) * 1992-09-10 1994-11-01 Hemlock Semiconductor Corporation Method for analyzing irregular shaped chunked silicon for contaminates
JP2922078B2 (ja) * 1993-03-17 1999-07-19 株式会社トクヤマ シリコンロッドの製造方法
US6251182B1 (en) 1993-05-11 2001-06-26 Hemlock Semiconductor Corporation Susceptor for float-zone apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2743200A (en) * 1954-05-27 1956-04-24 Bell Telephone Labor Inc Method of forming junctions in silicon
US2985519A (en) * 1958-06-02 1961-05-23 Du Pont Production of silicon
US3206286A (en) * 1959-07-23 1965-09-14 Westinghouse Electric Corp Apparatus for growing crystals
US2992311A (en) * 1960-09-28 1961-07-11 Siemens Ag Method and apparatus for floatingzone melting of semiconductor rods

Also Published As

Publication number Publication date
GB1081827A (en) 1967-09-06
US3454367A (en) 1969-07-08
DE1254590B (de) 1967-11-23
CH430656A (de) 1967-02-28

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