CH388459A - Verfahren zur Herstellung eines Transistors - Google Patents

Verfahren zur Herstellung eines Transistors

Info

Publication number
CH388459A
CH388459A CH1385060A CH1385060A CH388459A CH 388459 A CH388459 A CH 388459A CH 1385060 A CH1385060 A CH 1385060A CH 1385060 A CH1385060 A CH 1385060A CH 388459 A CH388459 A CH 388459A
Authority
CH
Switzerland
Prior art keywords
transistor
manufacturing
Prior art date
Application number
CH1385060A
Other languages
English (en)
Inventor
Anthony Beale Julian Robert
Francis Beer Andrew
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH388459A publication Critical patent/CH388459A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CH1385060A 1959-12-14 1960-12-12 Verfahren zur Herstellung eines Transistors CH388459A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB42433/59A GB940443A (en) 1959-12-14 1959-12-14 Improvements in and relating to semiconductor devices

Publications (1)

Publication Number Publication Date
CH388459A true CH388459A (de) 1965-02-28

Family

ID=10424389

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1385060A CH388459A (de) 1959-12-14 1960-12-12 Verfahren zur Herstellung eines Transistors

Country Status (6)

Country Link
US (1) US3160799A (de)
CH (1) CH388459A (de)
DE (1) DE1121224B (de)
ES (1) ES263136A1 (de)
GB (1) GB940443A (de)
NL (2) NL121714C (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1282190B (de) * 1964-03-12 1968-11-07 Kabusihiki Kaisha Hitachi Seis Verfahren zum Herstellen von Transistoren
US5896486A (en) * 1997-05-01 1999-04-20 Lucent Technologies Inc. Mass splice tray for optical fibers

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2829422A (en) * 1952-05-21 1958-04-08 Bell Telephone Labor Inc Methods of fabricating semiconductor signal translating devices
US2821493A (en) * 1954-03-18 1958-01-28 Hughes Aircraft Co Fused junction transistors with regrown base regions
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies
NL101253C (de) * 1955-09-12
NL215949A (de) * 1956-04-03
NL106110C (de) * 1956-08-24
US2842831A (en) * 1956-08-30 1958-07-15 Bell Telephone Labor Inc Manufacture of semiconductor devices
GB849477A (en) * 1957-09-23 1960-09-28 Nat Res Dev Improvements in or relating to semiconductor control devices
BE574814A (de) * 1958-01-16
NL134168C (de) * 1958-07-29
NL245567A (de) * 1958-11-20

Also Published As

Publication number Publication date
GB940443A (en) 1963-10-30
US3160799A (en) 1964-12-08
DE1121224B (de) 1962-01-04
NL121714C (de)
ES263136A1 (es) 1961-05-01
NL258921A (de)

Similar Documents

Publication Publication Date Title
CH365803A (de) Transistor und Verfahren zu dessen Herstellung
CH413111A (de) Verfahren zur Herstellung eines Transistors
CH410008A (de) Verfahren zur Herstellung neuer Aminoalkohole
CH388842A (de) Verfahren zur Herstellung eines Ferritkörpers
CH393543A (de) Transistor und Verfahren zu dessen Herstellung
CH347268A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH417969A (de) Verfahren zur Herstellung eines Epoxypolybutadiens
CH357470A (de) Verfahren zur Herstellung von Halbleitervorrichtungen
CH341572A (de) Verfahren zur Herstellung eines Halbleitergerätes
CH365144A (de) Feldeffekt-Transistor und Verfahren zur Herstellung eines solchen Transistors
AT278093B (de) Verfahren zur Herstellung eines Transistors
CH448516A (de) Verfahren zur Herstellung eines Filmbildners
CH396854A (de) Verfahren zur Herstellung eines Siliciumfilms
CH351031A (de) Verfahren zur Herstellung von Halbleiter-Vorrichtungen
CH491886A (de) Verfahren zur Herstellung eines Pregnadiens
CH394399A (de) Verfahren zur Herstellung von Halbleitervorrichtungen
CH415632A (de) Verfahren zur Herstellung neuer 3-Pyrrolidylmethylamine
CH404810A (de) Verfahren zur Herstellung eines Transistors und durch dieses Verfahren hergestellter Transistor
CH388459A (de) Verfahren zur Herstellung eines Transistors
CH350722A (de) Verfahren zur Herstellung einer Halbleiter-Vorrichtung
CH376602A (de) Verfahren zur Herstellung eines Schmiermittels
CH385349A (de) Verfahren zum Herstellen eines Transistors
CH375799A (de) Verfahren zur Herstellung eines Halbleiterkörpers
CH350723A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH381325A (de) Verfahren zur Herstellung einer Halbleitervorrichtung z. B. eines Transistors