CH376186A - Verfahren zur Herstellung einer Halbleitervorrichtung, insbesondere eines Transistors - Google Patents

Verfahren zur Herstellung einer Halbleitervorrichtung, insbesondere eines Transistors

Info

Publication number
CH376186A
CH376186A CH7656159A CH7656159A CH376186A CH 376186 A CH376186 A CH 376186A CH 7656159 A CH7656159 A CH 7656159A CH 7656159 A CH7656159 A CH 7656159A CH 376186 A CH376186 A CH 376186A
Authority
CH
Switzerland
Prior art keywords
transistor
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
CH7656159A
Other languages
German (de)
English (en)
Inventor
Johan Tummers Leonard
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH376186A publication Critical patent/CH376186A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
CH7656159A 1958-08-07 1959-08-04 Verfahren zur Herstellung einer Halbleitervorrichtung, insbesondere eines Transistors CH376186A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL230316 1958-08-07

Publications (1)

Publication Number Publication Date
CH376186A true CH376186A (de) 1964-03-31

Family

ID=19751303

Family Applications (1)

Application Number Title Priority Date Filing Date
CH7656159A CH376186A (de) 1958-08-07 1959-08-04 Verfahren zur Herstellung einer Halbleitervorrichtung, insbesondere eines Transistors

Country Status (6)

Country Link
US (1) US3074826A (en, 2012)
CH (1) CH376186A (en, 2012)
DE (1) DE1105524B (en, 2012)
FR (1) FR1232095A (en, 2012)
GB (1) GB917773A (en, 2012)
NL (2) NL111773C (en, 2012)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL121713C (en, 2012) * 1960-01-30
US3220895A (en) * 1961-08-25 1965-11-30 Raytheon Co Fabrication of barrier material devices
US3211594A (en) * 1961-12-19 1965-10-12 Hughes Aircraft Co Semiconductor device manufacture
NL287617A (en, 2012) * 1962-01-12
US3258371A (en) * 1962-02-01 1966-06-28 Semiconductor Res Found Silicon semiconductor device for high frequency, and method of its manufacture
US3307088A (en) * 1962-03-13 1967-02-28 Fujikawa Kyoichi Silver-lead alloy contacts containing dopants for semiconductors
US3257589A (en) * 1962-05-22 1966-06-21 Texas Instruments Inc Transistors and the fabrication thereof
US3268375A (en) * 1962-05-22 1966-08-23 Gordon J Ratcliff Alloy-diffusion process for fabricating germanium transistors
NL302804A (en, 2012) * 1962-08-23 1900-01-01
NL297821A (en, 2012) * 1962-10-08
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient
US3235419A (en) * 1963-01-15 1966-02-15 Philips Corp Method of manufacturing semiconductor devices
US3275910A (en) * 1963-01-18 1966-09-27 Motorola Inc Planar transistor with a relative higher-resistivity base region
US3513041A (en) * 1967-06-19 1970-05-19 Motorola Inc Fabrication of a germanium diffused base power transistor
US3538401A (en) * 1968-04-11 1970-11-03 Westinghouse Electric Corp Drift field thyristor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2793145A (en) * 1952-06-13 1957-05-21 Sylvania Electric Prod Method of forming a junction transistor
US2836522A (en) * 1952-11-15 1958-05-27 Rca Corp Junction type semiconductor device and method of its manufacture
BE531626A (en, 2012) * 1953-09-04
US2907969A (en) * 1954-02-19 1959-10-06 Westinghouse Electric Corp Photoelectric device
BE542380A (en, 2012) * 1954-10-29
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies

Also Published As

Publication number Publication date
NL111773C (en, 2012)
FR1232095A (fr) 1960-10-05
DE1105524B (de) 1961-04-27
US3074826A (en) 1963-01-22
GB917773A (en) 1963-02-06
NL230316A (en, 2012)

Similar Documents

Publication Publication Date Title
CH376186A (de) Verfahren zur Herstellung einer Halbleitervorrichtung, insbesondere eines Transistors
CH380247A (de) Verfahren zur Herstellung einer Halbleiteranordnung aus Silizium
CH415856A (de) Verfahren zum Herstellen eines pn-Übergangs in einer Halbleiteranordnung
CH370165A (de) Verfahren zur Herstellung einer Halbleitervorrichtung, insbesondere eines Transistors
CH432656A (de) Verfahren zum Herstellen einer Halbleiteranordnung
CH413111A (de) Verfahren zur Herstellung eines Transistors
AT296390B (de) Verfahren zur Herstellung eines Feldeffekttransistors
CH347268A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH391111A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH403991A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH395349A (de) Verfahren zur Herstellung einer Halbleiteranordnung
AT278093B (de) Verfahren zur Herstellung eines Transistors
CH402189A (de) Halbleitervorrichtung und Verfahren zu ihrer Herstellung
CH381325A (de) Verfahren zur Herstellung einer Halbleitervorrichtung z. B. eines Transistors
CH403086A (de) Verfahren zur Herstellung eines Transistors, insbesondere für Schaltzwecke
CH368240A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH375799A (de) Verfahren zur Herstellung eines Halbleiterkörpers
CH393562A (de) Halbleitervorrichtung, insbesondere photoempfindliche Vorrichtung, und Verfahren zu deren Herstellung
CH375451A (de) Verfahren zur Herstellung einer Halbleiteranordnung, insbesondere eines Transistors, mit einem einkristallinen Grundkörper aus Silizium
CH414019A (de) Verfahren zum Herstellen eines Halbleiter-Bauelements
CH429672A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH372385A (de) Verfahren zur Herstellung einer Halbleiteranordnung aus Silizium
AT263086B (de) Verfahren zur Herstellung einer Halbleitervorrichtung insbesondere einer Kristalldiode oder eines Transistors
CH350722A (de) Verfahren zur Herstellung einer Halbleiter-Vorrichtung
CH361058A (de) Verfahren zur Herstellung einer mindestens zwei p-n-Übergänge aufweisenden Halbleiteranordnung, insbesondere eines Transistors