CH360732A - Verfahren zur grossflächigen Kontaktierung eines einkristallinen Siliziumkörpers - Google Patents

Verfahren zur grossflächigen Kontaktierung eines einkristallinen Siliziumkörpers

Info

Publication number
CH360732A
CH360732A CH360732DA CH360732A CH 360732 A CH360732 A CH 360732A CH 360732D A CH360732D A CH 360732DA CH 360732 A CH360732 A CH 360732A
Authority
CH
Switzerland
Prior art keywords
crystal silicon
silicon body
area contacting
contacting
area
Prior art date
Application number
Other languages
English (en)
Inventor
Hubert Dipl Phys Patalong
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH360732A publication Critical patent/CH360732A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Conductive Materials (AREA)
  • Die Bonding (AREA)
  • Contacts (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Packages (AREA)
  • Silicon Compounds (AREA)
  • Powder Metallurgy (AREA)
CH360732D 1956-05-15 1957-05-07 Verfahren zur grossflächigen Kontaktierung eines einkristallinen Siliziumkörpers CH360732A (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DES48725A DE1085613B (de) 1956-05-15 1956-05-15 Verfahren zur grossflaechigen Kontaktierung eines einkristallinen Siliziumkoerpers
DES52207A DE1279848B (de) 1956-05-15 1957-02-05 Verfahren zum grossflaechigen Kontaktieren eines einkristallinen Siliziumkoerpers
DES55807A DE1279849B (de) 1956-05-15 1957-11-08 Verfahren zum grossflaechigen Kontaktieren eines einkristallinen Siliziumkoerpers
DES57002A DE1282792B (de) 1956-05-15 1958-02-19 Verfahren zum grossflaechigen Kontaktieren eines einkristallinen Siliziumkoerpers

Publications (1)

Publication Number Publication Date
CH360732A true CH360732A (de) 1962-03-15

Family

ID=27437483

Family Applications (4)

Application Number Title Priority Date Filing Date
CH360732D CH360732A (de) 1956-05-15 1957-05-07 Verfahren zur grossflächigen Kontaktierung eines einkristallinen Siliziumkörpers
CH5524458A CH365800A (de) 1956-05-15 1958-01-29 Verfahren zur grossflächigen Kontaktierung eines einkristallinen Siliziumkörpers
CH6568958A CH365801A (de) 1956-05-15 1958-11-01 Verfahren zur grossflächigen Kontaktierung eines einkristallinen Siliziumkörpers
CH6954959A CH365802A (de) 1956-05-15 1959-02-13 Verfahren zur grossflächigen Kontaktierung eines Siliziumkörpers

Family Applications After (3)

Application Number Title Priority Date Filing Date
CH5524458A CH365800A (de) 1956-05-15 1958-01-29 Verfahren zur grossflächigen Kontaktierung eines einkristallinen Siliziumkörpers
CH6568958A CH365801A (de) 1956-05-15 1958-11-01 Verfahren zur grossflächigen Kontaktierung eines einkristallinen Siliziumkörpers
CH6954959A CH365802A (de) 1956-05-15 1959-02-13 Verfahren zur grossflächigen Kontaktierung eines Siliziumkörpers

Country Status (8)

Country Link
US (4) US2898528A (de)
CH (4) CH360732A (de)
DE (4) DE1085613B (de)
FR (1) FR1174436A (de)
GB (4) GB846744A (de)
NL (7) NL112167C (de)
NO (1) NO120536B (de)
SE (3) SE323146B (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3031747A (en) * 1957-12-31 1962-05-01 Tung Sol Electric Inc Method of forming ohmic contact to silicon
NL113840C (de) * 1958-06-14
NL230892A (de) * 1958-08-27
BE590762A (de) * 1959-05-12
US3068127A (en) * 1959-06-02 1962-12-11 Siemens Ag Method of producing a highly doped p-type zone and an appertaining contact on a semiconductor crystal
DE1268470B (de) * 1959-06-23 1968-05-16 Licentia Gmbh Vorrichtung zum Aufschmelzen eines Goldueberzuges auf die Endflaeche eines Platindrahtstueckes geringen Durchmessers
US2973466A (en) * 1959-09-09 1961-02-28 Bell Telephone Labor Inc Semiconductor contact
NL261280A (de) * 1960-02-25 1900-01-01
US3181935A (en) * 1960-03-21 1965-05-04 Texas Instruments Inc Low-melting point materials and method of their manufacture
US3124868A (en) * 1960-04-18 1964-03-17 Method of making semiconductor devices
GB916379A (en) * 1960-05-23 1963-01-23 Ass Elect Ind Improvements in and relating to semiconductor junction units
DE1125084B (de) * 1961-01-31 1962-03-08 Telefunken Patent Verfahren zum Auflegieren von Legierungsmaterial auf einen Halbleiterkoerper
US3127285A (en) * 1961-02-21 1964-03-31 Vapor condensation doping method
US3226265A (en) * 1961-03-30 1965-12-28 Siemens Ag Method for producing a semiconductor device with a monocrystalline semiconductor body
GB953034A (en) * 1961-07-13 1964-03-25 Clevite Corp Improvements in or relating to semiconductor devices
NL296608A (de) * 1962-08-15
US3394994A (en) * 1966-04-26 1968-07-30 Westinghouse Electric Corp Method of varying the thickness of dendrites by addition of an impurity which controls growith in the <111> direction
US3518498A (en) * 1967-12-27 1970-06-30 Gen Electric High-q,high-frequency silicon/silicon-dioxide capacitor
ES374318A1 (es) * 1968-12-10 1972-03-16 Matsushita Electronics Corp Un metodo de fabricar un dispositivo semiconductor sensiblea la presion.
US3897277A (en) * 1973-10-30 1975-07-29 Gen Electric High aspect ratio P-N junctions by the thermal gradient zone melting technique

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT117475B (de) * 1924-06-30 1930-04-25 Degussa Verfahren zur Darstellung von Substitutionsprodukten des ß-Jodpyridins.
US2792538A (en) * 1950-09-14 1957-05-14 Bell Telephone Labor Inc Semiconductor translating devices with embedded electrode
NL90092C (de) * 1950-09-14 1900-01-01
BE517459A (de) * 1952-02-07
US2765245A (en) * 1952-08-22 1956-10-02 Gen Electric Method of making p-n junction semiconductor units
BE524233A (de) * 1952-11-14
NL104654C (de) * 1952-12-31 1900-01-01
US2702360A (en) * 1953-04-30 1955-02-15 Rca Corp Semiconductor rectifier
NL96840C (de) * 1953-05-11 1900-01-01
US2782492A (en) * 1954-02-11 1957-02-26 Atlas Powder Co Method of bonding fine wires to copper or copper alloys
NL193595A (de) * 1954-03-05
US2736847A (en) * 1954-05-10 1956-02-28 Hughes Aircraft Co Fused-junction silicon diodes
BE543253A (de) * 1954-12-01
US2784300A (en) * 1954-12-29 1957-03-05 Bell Telephone Labor Inc Method of fabricating an electrical connection
NL212349A (de) * 1955-04-22 1900-01-01
US2825667A (en) * 1955-05-10 1958-03-04 Rca Corp Methods of making surface alloyed semiconductor devices
US2809165A (en) * 1956-03-15 1957-10-08 Rca Corp Semi-conductor materials
US2805370A (en) * 1956-04-26 1957-09-03 Bell Telephone Labor Inc Alloyed connections to semiconductors
US2879190A (en) * 1957-03-22 1959-03-24 Bell Telephone Labor Inc Fabrication of silicon devices

Also Published As

Publication number Publication date
CH365802A (de) 1962-11-30
US2937113A (en) 1960-05-17
US2974074A (en) 1961-03-07
NL107648C (de)
DE1279848B (de) 1968-10-10
GB866376A (en) 1961-04-26
CH365801A (de) 1962-11-30
SE323147B (de) 1970-04-27
GB846744A (en) 1960-08-31
DE1282792B (de) 1968-11-14
NL112167C (de)
DE1279849B (de) 1968-10-10
SE323146B (de) 1970-04-27
NL216614A (de)
NL235480A (de)
NL231940A (de)
FR1174436A (fr) 1959-03-11
NL224458A (de)
DE1085613B (de) 1960-07-21
US2959501A (en) 1960-11-08
US2898528A (en) 1959-08-04
NL112317C (de)
NO120536B (de) 1970-11-02
GB865370A (en) 1961-04-12
GB903334A (en) 1962-08-15
SE336845B (de) 1971-07-19
CH365800A (de) 1962-11-30

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