CH333704A - Halbleiteranordnung mit einer Sperrschicht, welche einen Körper aus Germanium oder Silizium enthält, insbesondere Kristalldiode oder Transistor - Google Patents

Halbleiteranordnung mit einer Sperrschicht, welche einen Körper aus Germanium oder Silizium enthält, insbesondere Kristalldiode oder Transistor

Info

Publication number
CH333704A
CH333704A CH333704DA CH333704A CH 333704 A CH333704 A CH 333704A CH 333704D A CH333704D A CH 333704DA CH 333704 A CH333704 A CH 333704A
Authority
CH
Switzerland
Prior art keywords
germanium
transistor
silicon
barrier layer
body made
Prior art date
Application number
Other languages
English (en)
Inventor
Willem Willemse Theo
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH333704A publication Critical patent/CH333704A/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
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    • H01L2924/10253—Silicon [Si]
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    • Y10T428/12882—Cu-base component alternative to Ag-, Au-, or Ni-base component

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)
CH333704D 1954-07-01 1955-07-01 Halbleiteranordnung mit einer Sperrschicht, welche einen Körper aus Germanium oder Silizium enthält, insbesondere Kristalldiode oder Transistor CH333704A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL188893 1954-07-01

Publications (1)

Publication Number Publication Date
CH333704A true CH333704A (de) 1958-10-31

Family

ID=19750670

Family Applications (1)

Application Number Title Priority Date Filing Date
CH333704D CH333704A (de) 1954-07-01 1955-07-01 Halbleiteranordnung mit einer Sperrschicht, welche einen Körper aus Germanium oder Silizium enthält, insbesondere Kristalldiode oder Transistor

Country Status (8)

Country Link
US (1) US2971251A (de)
BE (1) BE539442A (de)
CH (1) CH333704A (de)
DE (2) DE1242298B (de)
ES (1) ES222691A1 (de)
FR (1) FR1126817A (de)
GB (1) GB772583A (de)
NL (1) NL107577C (de)

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DE1143588B (de) * 1960-09-22 1963-02-14 Siemens Ag Gesinterter Kontaktkoerper fuer Halbleiteranordnungen

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DE1285068B (de) * 1957-01-11 1968-12-12 Siemens Ag Legierungskontakt auf mit einer Goldschicht versehenen Halbleiterkristallen
US2922092A (en) * 1957-05-09 1960-01-19 Westinghouse Electric Corp Base contact members for semiconductor devices
US3000085A (en) * 1958-06-13 1961-09-19 Westinghouse Electric Corp Plating of sintered tungsten contacts
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US3173451A (en) * 1960-06-23 1965-03-16 Owens Corning Fiberglass Corp Cast manifold with liner
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US3141226A (en) * 1961-09-27 1964-07-21 Hughes Aircraft Co Semiconductor electrode attachment
US3235943A (en) * 1962-01-04 1966-02-22 Corning Glass Works Method of making a flux free bonded article
US3264074A (en) * 1962-04-04 1966-08-02 Lear Siegler Inc Thin film electron emissive electrode
US3214833A (en) * 1962-09-25 1965-11-02 George F Erickson Ceramic to metal bonding process
US3200490A (en) * 1962-12-07 1965-08-17 Philco Corp Method of forming ohmic bonds to a germanium-coated silicon body with eutectic alloyforming materials
US3241931A (en) * 1963-03-01 1966-03-22 Rca Corp Semiconductor devices
US3291578A (en) * 1963-11-04 1966-12-13 Gen Electric Metallized semiconductor support and mounting structure
US3342567A (en) * 1963-12-27 1967-09-19 Rca Corp Low resistance bonds to germaniumsilicon bodies and method of making such bonds
US3308353A (en) * 1964-09-10 1967-03-07 Talon Inc Semi-conductor device with specific support member material
GB1150356A (en) * 1965-10-26 1969-04-30 Int Nickel Ltd Coating Bodies of Oxidisable Elements and Alloys with Gold Alloys
US3367774A (en) * 1966-11-10 1968-02-06 Lambert & Brake Corp Method of producing a composite friction member
FR1518717A (fr) * 1966-12-21 1968-03-29 Radiotechnique Coprim Rtc Perfectionnements aux diodes électroluminescentes
DE1665969B1 (de) * 1967-06-15 1972-01-20 Siemens Ag Dichte Durchfuehrung eines oder mehrerer elektrischer und/oder Waermeleiter durch einen Isolierkoerper
US3620692A (en) * 1970-04-01 1971-11-16 Rca Corp Mounting structure for high-power semiconductor devices
US3753665A (en) * 1970-11-12 1973-08-21 Gen Electric Magnetic film plated wire
US3833425A (en) * 1972-02-23 1974-09-03 Us Navy Solar cell array
JPS51102565A (de) * 1975-03-07 1976-09-10 Hitachi Ltd
JPS5921032A (ja) * 1982-07-26 1984-02-02 Sumitomo Electric Ind Ltd 半導体装置用基板
JPS59141247A (ja) * 1983-01-31 1984-08-13 Sumitomo Electric Ind Ltd 半導体基板材料
JPS59141248A (ja) * 1983-01-31 1984-08-13 Sumitomo Electric Ind Ltd 半導体基板材料
US4929516A (en) * 1985-03-14 1990-05-29 Olin Corporation Semiconductor die attach system
US4872047A (en) * 1986-11-07 1989-10-03 Olin Corporation Semiconductor die attach system
US4978052A (en) * 1986-11-07 1990-12-18 Olin Corporation Semiconductor die attach system
JPH07105464B2 (ja) * 1992-12-04 1995-11-13 住友電気工業株式会社 半導体素子搭載用半導体装置
US5886407A (en) * 1993-04-14 1999-03-23 Frank J. Polese Heat-dissipating package for microcircuit devices
US5972737A (en) * 1993-04-14 1999-10-26 Frank J. Polese Heat-dissipating package for microcircuit devices and process for manufacture
US5686676A (en) * 1996-05-07 1997-11-11 Brush Wellman Inc. Process for making improved copper/tungsten composites

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US2441603A (en) * 1943-07-28 1948-05-18 Bell Telephone Labor Inc Electrical translating materials and method of making them
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US2525565A (en) * 1948-07-12 1950-10-10 Eitel Mccullough Inc Filamentary cathode for electron tubes
US2690409A (en) * 1949-07-08 1954-09-28 Thompson Prod Inc Binary coating of refractory metals
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1143588B (de) * 1960-09-22 1963-02-14 Siemens Ag Gesinterter Kontaktkoerper fuer Halbleiteranordnungen

Also Published As

Publication number Publication date
DE1242298B (de) 1967-06-15
DE1212639B (de) 1966-03-17
NL107577C (de)
GB772583A (en) 1957-04-17
ES222691A1 (es) 1956-01-01
FR1126817A (fr) 1956-12-03
US2971251A (en) 1961-02-14
BE539442A (de)

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