FR1135760A - Transistor à surface - Google Patents
Transistor à surfaceInfo
- Publication number
- FR1135760A FR1135760A FR1135760DA FR1135760A FR 1135760 A FR1135760 A FR 1135760A FR 1135760D A FR1135760D A FR 1135760DA FR 1135760 A FR1135760 A FR 1135760A
- Authority
- FR
- France
- Prior art keywords
- surface transistor
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2929006X | 1954-12-02 | ||
DES0041859 | 1954-12-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1135760A true FR1135760A (fr) | 1957-05-03 |
Family
ID=32394888
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1135760D Expired FR1135760A (fr) | 1954-12-02 | 1955-04-06 | Transistor à surface |
Country Status (3)
Country | Link |
---|---|
US (2) | US2929006A (fr) |
DE (1) | DE1073111B (fr) |
FR (1) | FR1135760A (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1080696B (de) * | 1956-12-10 | 1960-04-28 | Stanislas Teszner | Transistor, insbesondere Unipolartransistor, mit einem ebenen Halbleiterkoerper und halbleitenden, zylindrischen Zaehnen auf dessen Oberflaeche und Verfahren zu seiner Herstellung |
DE1117222B (de) * | 1958-10-23 | 1961-11-16 | Shockley Transistor Corp | Verfahren zur Herstellung eines Unipolartransistors |
DE1144403B (de) * | 1959-05-13 | 1963-02-28 | Ass Elect Ind | Leistungstransistor |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3062690A (en) * | 1955-08-05 | 1962-11-06 | Hoffman Electronics Corp | Semi-conductor device and method of making the same |
BE562491A (fr) * | 1956-03-05 | 1900-01-01 | ||
US2980830A (en) * | 1956-08-22 | 1961-04-18 | Shockley William | Junction transistor |
US2985550A (en) * | 1957-01-04 | 1961-05-23 | Texas Instruments Inc | Production of high temperature alloyed semiconductors |
US3187241A (en) * | 1957-03-27 | 1965-06-01 | Rca Corp | Transistor with emitter at bottom of groove extending crosswise the base |
US2967985A (en) * | 1957-04-11 | 1961-01-10 | Shockley | Transistor structure |
NL121250C (fr) * | 1958-01-16 | |||
US2967344A (en) * | 1958-02-14 | 1961-01-10 | Rca Corp | Semiconductor devices |
US2985805A (en) * | 1958-03-05 | 1961-05-23 | Rca Corp | Semiconductor devices |
US3111590A (en) * | 1958-06-05 | 1963-11-19 | Clevite Corp | Transistor structure controlled by an avalanche barrier |
US3083441A (en) * | 1959-04-13 | 1963-04-02 | Texas Instruments Inc | Method for fabricating transistors |
DE1133038B (de) * | 1960-05-10 | 1962-07-12 | Siemens Ag | Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps |
DE1141723B (de) * | 1960-06-10 | 1962-12-27 | Siemens Ag | Verfahren zur Herstellung einer Halbleiteranordnung mit einem n-leitenden Siliziumkristall, insbesondere eines Flaechentransistors vom pnp-Typ |
BE624904A (fr) * | 1961-11-17 | |||
GB1050417A (fr) * | 1963-07-09 | |||
US3283223A (en) * | 1963-12-27 | 1966-11-01 | Ibm | Transistor and method of fabrication to minimize surface recombination effects |
US3420719A (en) * | 1965-05-27 | 1969-01-07 | Ibm | Method of making semiconductors by laser induced diffusion |
US3514346A (en) * | 1965-08-02 | 1970-05-26 | Gen Electric | Semiconductive devices having asymmetrically conductive junction |
DE1514562B2 (de) * | 1965-09-07 | 1972-12-07 | Semikron Gesellschaft fur Gleich richterbau und Elektronik mbH, 8500 Nurn berg | Anordnung zur herstellung eines halbleiter-bauelementes |
GB1110654A (en) * | 1965-12-24 | 1968-04-24 | Standard Telephones Cables Ltd | Semiconductor devices |
US3432732A (en) * | 1966-03-31 | 1969-03-11 | Tokyo Shibaura Electric Co | Semiconductive electromechanical transducers |
US3479234A (en) * | 1967-05-01 | 1969-11-18 | Gen Electric | Method of producing field effect transistors |
DE1803883A1 (de) * | 1968-10-18 | 1970-05-27 | Siemens Ag | Durch mindestens zwei abstimmbare Kapazitaetsdioden gesteuerte elektrische Anordnung |
US3571674A (en) * | 1969-01-10 | 1971-03-23 | Fairchild Camera Instr Co | Fast switching pnp transistor |
US3936319A (en) * | 1973-10-30 | 1976-02-03 | General Electric Company | Solar cell |
JPS5176081A (ja) * | 1974-12-26 | 1976-07-01 | Sanyo Electric Co | Yokogatatoranjisutanoseizohoho |
JPS5914899B2 (ja) * | 1975-09-09 | 1984-04-06 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
US4125855A (en) * | 1977-03-28 | 1978-11-14 | Bell Telephone Laboratories, Incorporated | Integrated semiconductor crosspoint arrangement |
DE2926785C2 (de) * | 1979-07-03 | 1985-12-12 | HIGRATHERM electric GmbH, 7100 Heilbronn | Bipolarer Transistor und Verfahren zu seiner Herstellung |
JPS59210668A (ja) * | 1983-05-16 | 1984-11-29 | Fujitsu Ltd | 半導体装置 |
JPS60110158A (ja) * | 1983-11-21 | 1985-06-15 | Nec Corp | 半導体装置 |
EP0365166B1 (fr) * | 1988-10-02 | 1994-02-23 | Canon Kabushiki Kaisha | Objet en cristal et procédé pour sa fabrication |
US7071784B2 (en) * | 2002-11-29 | 2006-07-04 | Linear Technology Corporation | High linearity digital variable gain amplifier |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
NL82014C (fr) * | 1949-11-30 | |||
US2728034A (en) * | 1950-09-08 | 1955-12-20 | Rca Corp | Semi-conductor devices with opposite conductivity zones |
BE506280A (fr) * | 1950-10-10 | |||
NL179061C (nl) * | 1952-06-13 | Dow Chemical Co | Werkwijze ter bereiding van een schuimmassa uit copolymeren van een aromatisch monovinylideen-monomeer en een ethenisch onverzadigd carbonzuuranhydride, alsmede de hieruit vervaardigde schuimvormige voorwerpen. | |
US2764642A (en) * | 1952-10-31 | 1956-09-25 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
US2705767A (en) * | 1952-11-18 | 1955-04-05 | Gen Electric | P-n junction transistor |
BE525387A (fr) * | 1952-12-29 | 1900-01-01 | ||
BE525386A (fr) * | 1952-12-29 | |||
NL85504C (fr) * | 1953-05-01 | |||
US2792539A (en) * | 1953-07-07 | 1957-05-14 | Sprague Electric Co | Transistor construction |
US2820154A (en) * | 1954-11-15 | 1958-01-14 | Rca Corp | Semiconductor devices |
-
0
- DE DENDAT1073111D patent/DE1073111B/de active Pending
- US US2837704D patent/US2837704A/en not_active Expired - Lifetime
-
1955
- 1955-04-06 FR FR1135760D patent/FR1135760A/fr not_active Expired
- 1955-11-25 US US548923A patent/US2929006A/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1080696B (de) * | 1956-12-10 | 1960-04-28 | Stanislas Teszner | Transistor, insbesondere Unipolartransistor, mit einem ebenen Halbleiterkoerper und halbleitenden, zylindrischen Zaehnen auf dessen Oberflaeche und Verfahren zu seiner Herstellung |
DE1117222B (de) * | 1958-10-23 | 1961-11-16 | Shockley Transistor Corp | Verfahren zur Herstellung eines Unipolartransistors |
DE1144403B (de) * | 1959-05-13 | 1963-02-28 | Ass Elect Ind | Leistungstransistor |
Also Published As
Publication number | Publication date |
---|---|
US2929006A (en) | 1960-03-15 |
US2837704A (en) | 1958-06-03 |
DE1073111B (de) | 1960-01-14 |
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