CA971129A - Method of radio frequency sputter etching - Google Patents

Method of radio frequency sputter etching

Info

Publication number
CA971129A
CA971129A CA136,599A CA136599A CA971129A CA 971129 A CA971129 A CA 971129A CA 136599 A CA136599 A CA 136599A CA 971129 A CA971129 A CA 971129A
Authority
CA
Canada
Prior art keywords
radio frequency
sputter etching
frequency sputter
etching
radio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA136,599A
Other languages
English (en)
Other versions
CA136599S (en
Inventor
John L. Vossen (Jr.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA971129A publication Critical patent/CA971129A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Optical Filters (AREA)
  • ing And Chemical Polishing (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
CA136,599A 1971-04-05 1972-03-08 Method of radio frequency sputter etching Expired CA971129A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13138771A 1971-04-05 1971-04-05

Publications (1)

Publication Number Publication Date
CA971129A true CA971129A (en) 1975-07-15

Family

ID=22449243

Family Applications (1)

Application Number Title Priority Date Filing Date
CA136,599A Expired CA971129A (en) 1971-04-05 1972-03-08 Method of radio frequency sputter etching

Country Status (9)

Country Link
US (1) US3692655A (OSRAM)
JP (1) JPS511587B1 (OSRAM)
AU (1) AU456093B2 (OSRAM)
CA (1) CA971129A (OSRAM)
DE (1) DE2215711C2 (OSRAM)
FR (1) FR2136067A5 (OSRAM)
GB (1) GB1374502A (OSRAM)
IT (1) IT949868B (OSRAM)
NL (1) NL7204456A (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3966577A (en) * 1973-08-27 1976-06-29 Trw Inc. Dielectrically isolated semiconductor devices
DE2752675A1 (de) * 1976-12-08 1978-06-15 Philips Corp Verfahren zum rasterfoermigen ausbilden einer pyroelektrischen vidikonauftreffplatte
US4132586A (en) * 1977-12-20 1979-01-02 International Business Machines Corporation Selective dry etching of substrates
JPS5942749B2 (ja) * 1979-07-11 1984-10-17 株式会社東芝 多層膜のエツチング方法
US4333793A (en) * 1980-10-20 1982-06-08 Bell Telephone Laboratories, Incorporated High-selectivity plasma-assisted etching of resist-masked layer
US4421593A (en) * 1983-04-11 1983-12-20 Rca Corporation Reverse etching of chromium
US5007983A (en) * 1988-01-29 1991-04-16 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Etching method for photoresists or polymers
CN110496451A (zh) * 2019-08-23 2019-11-26 苏州华滤节能科技有限公司 机油过滤器用滤芯

Also Published As

Publication number Publication date
AU456093B2 (en) 1974-11-22
US3692655A (en) 1972-09-19
FR2136067A5 (OSRAM) 1972-12-22
DE2215711C2 (de) 1982-06-03
IT949868B (it) 1973-06-11
NL7204456A (OSRAM) 1972-10-09
AU4043872A (en) 1973-10-04
JPS511587B1 (OSRAM) 1976-01-19
GB1374502A (en) 1974-11-20
DE2215711A1 (de) 1973-10-25

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