CA968674A - Method of depositing an epitaxial semiconductor layer from the liquid phase - Google Patents

Method of depositing an epitaxial semiconductor layer from the liquid phase

Info

Publication number
CA968674A
CA968674A CA135,542A CA135542A CA968674A CA 968674 A CA968674 A CA 968674A CA 135542 A CA135542 A CA 135542A CA 968674 A CA968674 A CA 968674A
Authority
CA
Canada
Prior art keywords
depositing
semiconductor layer
liquid phase
epitaxial semiconductor
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA135,542A
Other languages
English (en)
Other versions
CA135542S (en
Inventor
Michael Ettenberg
Harry F. Lockwood
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA968674A publication Critical patent/CA968674A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CA135,542A 1971-07-08 1972-02-24 Method of depositing an epitaxial semiconductor layer from the liquid phase Expired CA968674A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16060871A 1971-07-08 1971-07-08

Publications (1)

Publication Number Publication Date
CA968674A true CA968674A (en) 1975-06-03

Family

ID=22577589

Family Applications (1)

Application Number Title Priority Date Filing Date
CA135,542A Expired CA968674A (en) 1971-07-08 1972-02-24 Method of depositing an epitaxial semiconductor layer from the liquid phase

Country Status (6)

Country Link
US (1) US3741825A (de)
CA (1) CA968674A (de)
DE (1) DE2215355C3 (de)
FR (1) FR2144645B1 (de)
GB (1) GB1371537A (de)
IT (1) IT950764B (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3862859A (en) * 1972-01-10 1975-01-28 Rca Corp Method of making a semiconductor device
BE795005A (fr) * 1972-02-09 1973-05-29 Rca Corp Procede et appareil de croissance epitaxiale d'une matiere semi-conductrice a partir de la phase liquide et produit ainsi obtenu
JPS5213510B2 (de) * 1973-02-26 1977-04-14
US3899371A (en) * 1973-06-25 1975-08-12 Rca Corp Method of forming PN junctions by liquid phase epitaxy
US3891478A (en) * 1973-08-16 1975-06-24 Rca Corp Deposition of epitaxial layer from the liquid phase
JPS5346594B2 (de) * 1974-02-18 1978-12-14
US3890194A (en) * 1974-04-11 1975-06-17 Rca Corp Method for depositing on a substrate a plurality of epitaxial layers in succession
US3993963A (en) * 1974-06-20 1976-11-23 Bell Telephone Laboratories, Incorporated Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same
IT1055104B (it) * 1975-02-07 1981-12-21 Philips Nv Metodo di fabbricazione di dispositivi semiconduttori comportante la formazione di uno strato di materiale semiconduuttore su di un substrato apparato per l'attuazione di tale metodo e dispositivo semiconduttore fabbricato con l'ausilio di detto metodo
US3950195A (en) * 1975-02-21 1976-04-13 Bell Telephone Laboratories, Incorporated Lpe technique for reducing edge growth
JPS51131270A (en) * 1975-05-09 1976-11-15 Matsushita Electric Ind Co Ltd Semi-conductor manufacturing unit
JPS52109866A (en) * 1976-03-11 1977-09-14 Oki Electric Ind Co Ltd Liquid epitaxial growing method
NL7712315A (nl) * 1977-11-09 1979-05-11 Philips Nv Werkwijze voor het epitaxiaal neerslaan van verscheidene lagen.
US4233090A (en) * 1979-06-28 1980-11-11 Rca Corporation Method of making a laser diode
FR2481325A1 (fr) * 1980-04-23 1981-10-30 Radiotechnique Compelec Nacelle utilisable pour des depots epitaxiques multicouches en phase liquide et procede de depot mettant en jeu ladite nacelle
US4470368A (en) * 1982-03-10 1984-09-11 At&T Bell Laboratories LPE Apparatus with improved thermal geometry
GB2121828B (en) * 1982-06-14 1985-12-11 Philips Electronic Associated Method of casting charges for use in a liquid phase epitaxy growth process
US4569054A (en) * 1983-06-17 1986-02-04 Rca Corporation Double heterostructure laser
US4642143A (en) * 1983-06-17 1987-02-10 Rca Corporation Method of making a double heterostructure laser
US4547396A (en) * 1983-06-17 1985-10-15 Rca Corporation Method of making a laser array

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3565702A (en) * 1969-02-14 1971-02-23 Rca Corp Depositing successive epitaxial semiconductive layers from the liquid phase
DE1946049C3 (de) * 1969-09-11 1979-02-08 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren und Vorrichtung zur Flüssigphasenepitaxie

Also Published As

Publication number Publication date
IT950764B (it) 1973-06-20
FR2144645A1 (de) 1973-02-16
US3741825A (en) 1973-06-26
DE2215355C3 (de) 1986-04-17
DE2215355A1 (de) 1973-01-18
GB1371537A (en) 1974-10-23
FR2144645B1 (de) 1977-12-23
DE2215355B2 (de) 1980-06-26

Similar Documents

Publication Publication Date Title
CA990186A (en) Method of depositing epitaxial semiconductor layers from the liquid phase
CA968674A (en) Method of depositing an epitaxial semiconductor layer from the liquid phase
CA980798A (en) Process for the isomerization of hydrocarbons
CA1012447A (en) Apparatus for deposition of semiconductor thin layers
CA974659A (en) Charged coupled devices using a thin insulated semiconductor layer
CA947186A (en) Method for the solution growth of more perfect semiconductor crystals
CA955832A (en) Method of forming semiconductor device with smooth flat surface
CA1022438A (en) Method of epitaxially depositing a semiconductor material on a substrate
NL7502495A (nl) Vorming van epitaxiale laag uit de vloeibare fase.
AU4566672A (en) Method of epitaxially depositing ternary iii-v compounds from the liquid phase
CA860899A (en) Depositing successive epitaxial semiconductive layers from the liquid phase
IL42260A0 (en) The manufacture of semiconductor devices by film deposition
AU488274B2 (en) Method of and device for growing epitaxial layers from the liquid phase
CA894736A (en) Substrates for the growth of semiconductor layers
CA956868A (en) Growing of liquid phase epitaxial layers
CA982155A (en) Process for the isomerization of olefins
CA904450A (en) Method of manufacturing semiconductor elements by liquid phase growing method
CA978663A (en) Method and device for the epitaxial deposition of a layer of crystalline material on a flat side of a monocrystalline substrate from a liquid phase
CA978452A (en) Growing of liquid phase epitaxial layers
CA877253A (en) Method for controlled deposition of elements on structures of complex shapes
CA979752A (en) Method for vapor deposition of materials
CA883495A (en) Technique for growth of epitaxial compound semiconductor films
CA958968A (en) Growing of epitaxial layers on substrates
CA960551A (en) Method of depositing crystalline semiconductor material
CA873042A (en) Method of forming shallow junction semiconductor devices