CA3137214A1 - Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices - Google Patents
Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices Download PDFInfo
- Publication number
- CA3137214A1 CA3137214A1 CA3137214A CA3137214A CA3137214A1 CA 3137214 A1 CA3137214 A1 CA 3137214A1 CA 3137214 A CA3137214 A CA 3137214A CA 3137214 A CA3137214 A CA 3137214A CA 3137214 A1 CA3137214 A1 CA 3137214A1
- Authority
- CA
- Canada
- Prior art keywords
- substrate
- qubit
- qubits
- quantum computing
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002096 quantum dot Substances 0.000 title claims description 256
- 238000004519 manufacturing process Methods 0.000 title claims description 76
- 238000000034 method Methods 0.000 title claims description 72
- 239000000758 substrate Substances 0.000 claims abstract description 136
- 239000000463 material Substances 0.000 claims description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 230000008859 change Effects 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000010432 diamond Substances 0.000 claims description 12
- 229910003460 diamond Inorganic materials 0.000 claims description 12
- 238000005259 measurement Methods 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- 239000005350 fused silica glass Substances 0.000 claims description 10
- 239000010453 quartz Substances 0.000 claims description 10
- 229910052594 sapphire Inorganic materials 0.000 claims description 10
- 239000010980 sapphire Substances 0.000 claims description 10
- 239000007769 metal material Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 230000035945 sensitivity Effects 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000013461 design Methods 0.000 description 42
- 230000008569 process Effects 0.000 description 17
- 239000002887 superconductor Substances 0.000 description 15
- 238000003801 milling Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 230000000875 corresponding effect Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 239000011800 void material Substances 0.000 description 6
- 230000003993 interaction Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005755 formation reaction Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052755 nonmetal Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910001152 Bi alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000005610 quantum mechanics Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
- G06N10/40—Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66977—Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/805—Constructional details for Josephson-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N69/00—Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mathematical Analysis (AREA)
- Data Mining & Analysis (AREA)
- Evolutionary Computation (AREA)
- Artificial Intelligence (AREA)
- Mathematical Optimization (AREA)
- Pure & Applied Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Computational Mathematics (AREA)
- Software Systems (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/389,001 | 2019-04-19 | ||
| US16/389,033 US11195982B2 (en) | 2019-04-19 | 2019-04-19 | Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices |
| US16/389,033 | 2019-04-19 | ||
| US16/389,001 US10903412B2 (en) | 2019-04-19 | 2019-04-19 | Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices |
| PCT/EP2020/060612 WO2020212437A1 (en) | 2019-04-19 | 2020-04-15 | Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA3137214A1 true CA3137214A1 (en) | 2020-10-22 |
Family
ID=70289808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA3137214A Pending CA3137214A1 (en) | 2019-04-19 | 2020-04-15 | Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices |
Country Status (11)
| Country | Link |
|---|---|
| EP (1) | EP3956825A1 (ja) |
| JP (1) | JP7556644B2 (ja) |
| KR (1) | KR20210143798A (ja) |
| CN (1) | CN113711245A (ja) |
| AU (1) | AU2020259830B2 (ja) |
| BR (1) | BR112021020936A2 (ja) |
| CA (1) | CA3137214A1 (ja) |
| IL (1) | IL286613B2 (ja) |
| MX (1) | MX2021012618A (ja) |
| SG (1) | SG11202109829PA (ja) |
| WO (1) | WO2020212437A1 (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013180780A2 (en) | 2012-03-08 | 2013-12-05 | D-Wave Systems Inc. | Systems and methods for fabrication of superconducting integrated circuits |
| JP7223711B2 (ja) | 2017-02-01 | 2023-02-16 | ディー－ウェイブ システムズ インコーポレイテッド | 超伝導集積回路の製造のためのシステム及び方法 |
| US20200152851A1 (en) | 2018-11-13 | 2020-05-14 | D-Wave Systems Inc. | Systems and methods for fabricating superconducting integrated circuits |
| WO2020168097A1 (en) | 2019-02-15 | 2020-08-20 | D-Wave Systems Inc. | Kinetic inductance for couplers and compact qubits |
| WO2022178130A1 (en) * | 2021-02-19 | 2022-08-25 | D-Wave Systems Inc. | Systems and methods for fabrication of superconducting integrated circuits with improved coherence |
| CN115598490B (zh) * | 2021-06-28 | 2024-04-05 | 本源量子计算科技（合肥）股份有限公司 | 量子芯片测试方法、装置、量子测控系统和量子计算机 |
| CN116205176B (zh) * | 2021-11-30 | 2024-07-16 | 本源量子计算科技（合肥）股份有限公司 | 一种大规模量子芯片谐振腔的设计方法及量子处理器 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9219298B2 (en) | 2013-03-15 | 2015-12-22 | International Business Machines Corporation | Removal of spurious microwave modes via flip-chip crossover |
| WO2016000836A1 (en) * | 2014-07-02 | 2016-01-07 | University Of Copenhagen | A semiconductor josephson junction and a transmon qubit related thereto |
| US10068181B1 (en) * | 2015-04-27 | 2018-09-04 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafer and methods for making the same |
| US10170681B1 (en) * | 2017-11-28 | 2019-01-01 | International Business Machines Corporation | Laser annealing of qubits with structured illumination |
| US10686007B2 (en) * | 2018-06-20 | 2020-06-16 | Intel Corporation | Quantum circuit assemblies with at least partially buried transmission lines and capacitors |
-
2020
- 2020-04-15 BR BR112021020936A patent/BR112021020936A2/pt unknown
- 2020-04-15 MX MX2021012618A patent/MX2021012618A/es unknown
- 2020-04-15 EP EP20719425.9A patent/EP3956825A1/en active Pending
- 2020-04-15 CN CN202080028974.4A patent/CN113711245A/zh active Pending
- 2020-04-15 SG SG11202109829P patent/SG11202109829PA/en unknown
- 2020-04-15 AU AU2020259830A patent/AU2020259830B2/en active Active
- 2020-04-15 JP JP2021560186A patent/JP7556644B2/ja active Active
- 2020-04-15 IL IL286613A patent/IL286613B2/en unknown
- 2020-04-15 KR KR1020217032410A patent/KR20210143798A/ko active Search and Examination
- 2020-04-15 WO PCT/EP2020/060612 patent/WO2020212437A1/en active Application Filing
- 2020-04-15 CA CA3137214A patent/CA3137214A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| AU2020259830A1 (en) | 2021-09-30 |
| JP7556644B2 (ja) | 2024-09-26 |
| SG11202109829PA (en) | 2021-10-28 |
| WO2020212437A1 (en) | 2020-10-22 |
| IL286613B2 (en) | 2024-06-01 |
| JP2022528739A (ja) | 2022-06-15 |
| KR20210143798A (ko) | 2021-11-29 |
| IL286613A (en) | 2021-10-31 |
| MX2021012618A (es) | 2021-11-12 |
| EP3956825A1 (en) | 2022-02-23 |
| BR112021020936A2 (pt) | 2022-01-25 |
| CN113711245A (zh) | 2021-11-26 |
| IL286613B1 (en) | 2024-02-01 |
| AU2020259830B2 (en) | 2023-08-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU2020259830B2 (en) | Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices | |
| US11527697B2 (en) | Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices | |
| US11195982B2 (en) | Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices | |
| US11683996B2 (en) | Gate voltage-tunable electron system integrated with superconducting resonator for quantum computing device | |
| AU2020255132B2 (en) | Tunable superconducting resonator for quantum computing devices | |
| US11227229B2 (en) | Transmon qubit flip-chip structures for quantum computing devices | |
| US11489103B2 (en) | Fabricating transmon qubit flip-chip structures for quantum computing devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request |
Effective date: 20240206 |
|
| EEER | Examination request |
Effective date: 20240206 |