MX2021012618A - Estructuras de sintonizacion de frecuencia de bits cuanticos y metodos de fabricacion para dispositivos de computacion cuantica de flip chip. - Google Patents

Estructuras de sintonizacion de frecuencia de bits cuanticos y metodos de fabricacion para dispositivos de computacion cuantica de flip chip.

Info

Publication number
MX2021012618A
MX2021012618A MX2021012618A MX2021012618A MX2021012618A MX 2021012618 A MX2021012618 A MX 2021012618A MX 2021012618 A MX2021012618 A MX 2021012618A MX 2021012618 A MX2021012618 A MX 2021012618A MX 2021012618 A MX2021012618 A MX 2021012618A
Authority
MX
Mexico
Prior art keywords
quantum computing
computing devices
flip chip
frequency tuning
fabrication methods
Prior art date
Application number
MX2021012618A
Other languages
English (en)
Spanish (es)
Inventor
Dongbing Shao
Markus Brink
Firat Solgun
Jared Barney Hertzberg
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/389,033 external-priority patent/US11195982B2/en
Priority claimed from US16/389,001 external-priority patent/US10903412B2/en
Application filed by Ibm filed Critical Ibm
Publication of MX2021012618A publication Critical patent/MX2021012618A/es

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06NCOMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • G06N10/40Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06NCOMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/80Constructional details
    • H10N60/805Constructional details for Josephson-effect devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N69/00Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66977Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Artificial Intelligence (AREA)
  • Pure & Applied Mathematics (AREA)
  • Computing Systems (AREA)
  • Mathematical Analysis (AREA)
  • Evolutionary Computation (AREA)
  • Software Systems (AREA)
  • Data Mining & Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Computational Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Junction Field-Effect Transistors (AREA)
MX2021012618A 2019-04-19 2020-04-15 Estructuras de sintonizacion de frecuencia de bits cuanticos y metodos de fabricacion para dispositivos de computacion cuantica de flip chip. MX2021012618A (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/389,033 US11195982B2 (en) 2019-04-19 2019-04-19 Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices
US16/389,001 US10903412B2 (en) 2019-04-19 2019-04-19 Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices
PCT/EP2020/060612 WO2020212437A1 (en) 2019-04-19 2020-04-15 Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices

Publications (1)

Publication Number Publication Date
MX2021012618A true MX2021012618A (es) 2021-11-12

Family

ID=70289808

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2021012618A MX2021012618A (es) 2019-04-19 2020-04-15 Estructuras de sintonizacion de frecuencia de bits cuanticos y metodos de fabricacion para dispositivos de computacion cuantica de flip chip.

Country Status (11)

Country Link
EP (1) EP3956825A1 (ja)
JP (1) JP2022528739A (ja)
KR (1) KR20210143798A (ja)
CN (1) CN113711245A (ja)
AU (1) AU2020259830B2 (ja)
BR (1) BR112021020936A2 (ja)
CA (1) CA3137214A1 (ja)
IL (1) IL286613B2 (ja)
MX (1) MX2021012618A (ja)
SG (1) SG11202109829PA (ja)
WO (1) WO2020212437A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013180780A2 (en) 2012-03-08 2013-12-05 D-Wave Systems Inc. Systems and methods for fabrication of superconducting integrated circuits
CN110462857B (zh) 2017-02-01 2024-02-27 D-波系统公司 用于制造超导集成电路的系统和方法
US20200152851A1 (en) 2018-11-13 2020-05-14 D-Wave Systems Inc. Systems and methods for fabricating superconducting integrated circuits
WO2022178130A1 (en) * 2021-02-19 2022-08-25 D-Wave Systems Inc. Systems and methods for fabrication of superconducting integrated circuits with improved coherence
CN115598490B (zh) * 2021-06-28 2024-04-05 本源量子计算科技(合肥)股份有限公司 量子芯片测试方法、装置、量子测控系统和量子计算机

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3164889B1 (en) * 2014-07-02 2023-06-07 University of Copenhagen A semiconductor josephson junction comprising a semiconductor nanowire and superconductor layers thereon
US10068181B1 (en) * 2015-04-27 2018-09-04 Rigetti & Co, Inc. Microwave integrated quantum circuits with cap wafer and methods for making the same
US10170681B1 (en) * 2017-11-28 2019-01-01 International Business Machines Corporation Laser annealing of qubits with structured illumination
US10686007B2 (en) * 2018-06-20 2020-06-16 Intel Corporation Quantum circuit assemblies with at least partially buried transmission lines and capacitors

Also Published As

Publication number Publication date
AU2020259830B2 (en) 2023-08-10
JP2022528739A (ja) 2022-06-15
IL286613B2 (en) 2024-06-01
CA3137214A1 (en) 2020-10-22
KR20210143798A (ko) 2021-11-29
BR112021020936A2 (pt) 2022-01-25
IL286613A (en) 2021-10-31
CN113711245A (zh) 2021-11-26
EP3956825A1 (en) 2022-02-23
IL286613B1 (en) 2024-02-01
AU2020259830A1 (en) 2021-09-30
WO2020212437A1 (en) 2020-10-22
SG11202109829PA (en) 2021-10-28

Similar Documents

Publication Publication Date Title
MX2021012618A (es) Estructuras de sintonizacion de frecuencia de bits cuanticos y metodos de fabricacion para dispositivos de computacion cuantica de flip chip.
WO2018217698A3 (en) SUBSTRATE CONTAINING SILICA WITH INTERCONNECTION HOLES HAVING AXIALLY VARIABLE SIDEWALL CONICITY AND METHODS OF FORMING THE SAME
WO2016050052A1 (zh) 阵列基板及其制作方法、显示装置
SG10201805059SA (en) Semiconductor memory device and method of manufacturing the same
SG10201805702QA (en) Method of forming an integrated circuit and related integrated circuit
SG10201805238RA (en) Semiconductor device
MY186812A (en) Iii-n devices in si trenches
JP2016006855A5 (ja)
WO2014163729A3 (en) Acoustic bandgap structures for integration of mems resonators
US8994035B2 (en) Semiconductor device with low-conducting buried and/or surface layers
MY173875A (en) Photovoltaic devices
GB2529953A (en) Nanostructures and nanofeatures with Si (111) planes on Si (100) wafers for III-N epitaxy
SG10201804042RA (en) Semiconductor Memory Devices
WO2019190595A3 (en) Method and apparatus for heat sinking high frequency ic with absorbing material
US9293539B2 (en) Nitride semiconductor epitaxial wafer and nitride semiconductor device
MX2021012382A (es) Cubits transmon con estructuras de condensador con trincheras.
WO2018084448A3 (ko) 모판, 모판의 제조 방법, 마스크의 제조 방법 및 oled 화소 증착 방법
MY202414A (en) Embedded reference layers fo semiconductor package substrates
WO2022173503A3 (en) Tuning of emission properties of quantum emission devices using strain-tuned piezoelectric template layers
TW201807821A (zh) 半導體結構
MX2017011719A (es) Dispositivo optoelectrónico y procedimiento para elaborarlo.
WO2020068180A3 (en) Strain tuning individual quantum dot emission frequencies with local phase transitions
FI20175123L (fi) Puolijohderakenteita ja niiden valmistus
US9093329B2 (en) Array substrate and fabrication method thereof, and liquid crystal display device
TW201916586A (zh) 背閘極控制變容器