CA3137214A1 - Structures d'accord de frequence de bit quantique et procedes de fabrication pour dispositifs informatiques quantiques de puce retournee - Google Patents
Structures d'accord de frequence de bit quantique et procedes de fabrication pour dispositifs informatiques quantiques de puce retournee Download PDFInfo
- Publication number
- CA3137214A1 CA3137214A1 CA3137214A CA3137214A CA3137214A1 CA 3137214 A1 CA3137214 A1 CA 3137214A1 CA 3137214 A CA3137214 A CA 3137214A CA 3137214 A CA3137214 A CA 3137214A CA 3137214 A1 CA3137214 A1 CA 3137214A1
- Authority
- CA
- Canada
- Prior art keywords
- substrate
- qubit
- qubits
- quantum computing
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002096 quantum dot Substances 0.000 title claims description 256
- 238000004519 manufacturing process Methods 0.000 title claims description 76
- 238000000034 method Methods 0.000 title claims description 72
- 239000000758 substrate Substances 0.000 claims abstract description 136
- 239000000463 material Substances 0.000 claims description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 230000008859 change Effects 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000010432 diamond Substances 0.000 claims description 12
- 229910003460 diamond Inorganic materials 0.000 claims description 12
- 238000005259 measurement Methods 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- 239000005350 fused silica glass Substances 0.000 claims description 10
- 239000010453 quartz Substances 0.000 claims description 10
- 229910052594 sapphire Inorganic materials 0.000 claims description 10
- 239000010980 sapphire Substances 0.000 claims description 10
- 239000007769 metal material Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 230000035945 sensitivity Effects 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000013461 design Methods 0.000 description 42
- 230000008569 process Effects 0.000 description 17
- 239000002887 superconductor Substances 0.000 description 15
- 238000003801 milling Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 230000000875 corresponding effect Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 239000011800 void material Substances 0.000 description 6
- 230000003993 interaction Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005755 formation reaction Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052755 nonmetal Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910001152 Bi alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000005610 quantum mechanics Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
- G06N10/40—Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66977—Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/805—Constructional details for Josephson-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N69/00—Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Computational Mathematics (AREA)
- Pure & Applied Mathematics (AREA)
- Computing Systems (AREA)
- Mathematical Analysis (AREA)
- Evolutionary Computation (AREA)
- Software Systems (AREA)
- Data Mining & Analysis (AREA)
- Artificial Intelligence (AREA)
- Mathematical Optimization (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
La présente invention concerne un dispositif informatique quantique comprenant une première puce ayant un premier substrat et un ou plusieurs bits quantiques disposés sur le premier substrat. Chacun du ou des bits quantiques a une fréquence de résonance associée. Le dispositif informatique quantique comprend en outre une seconde puce ayant un second substrat et au moins une surface conductrice disposée sur le second substrat à l'opposé du ou des bits quantiques. La ou les surfaces conductrices ont au moins une dimension conçue pour ajuster la fréquence de résonance associée à au moins l'un du ou des bits quantiques à une valeur de réglage de fréquence déterminée.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/389,001 US10903412B2 (en) | 2019-04-19 | 2019-04-19 | Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices |
| US16/389,033 | 2019-04-19 | ||
| US16/389,033 US11195982B2 (en) | 2019-04-19 | 2019-04-19 | Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices |
| US16/389,001 | 2019-04-19 | ||
| PCT/EP2020/060612 WO2020212437A1 (fr) | 2019-04-19 | 2020-04-15 | Structures d'accord de fréquence de bit quantique et procédés de fabrication pour dispositifs informatiques quantiques de puce retournée |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA3137214A1 true CA3137214A1 (fr) | 2020-10-22 |
Family
ID=70289808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA3137214A Pending CA3137214A1 (fr) | 2019-04-19 | 2020-04-15 | Structures d'accord de frequence de bit quantique et procedes de fabrication pour dispositifs informatiques quantiques de puce retournee |
Country Status (11)
| Country | Link |
|---|---|
| EP (1) | EP3956825A1 (fr) |
| JP (1) | JP2022528739A (fr) |
| KR (1) | KR20210143798A (fr) |
| CN (1) | CN113711245A (fr) |
| AU (1) | AU2020259830B2 (fr) |
| BR (1) | BR112021020936A2 (fr) |
| CA (1) | CA3137214A1 (fr) |
| IL (1) | IL286613B1 (fr) |
| MX (1) | MX2021012618A (fr) |
| SG (1) | SG11202109829PA (fr) |
| WO (1) | WO2020212437A1 (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9768371B2 (en) | 2012-03-08 | 2017-09-19 | D-Wave Systems Inc. | Systems and methods for fabrication of superconducting integrated circuits |
| WO2018144601A1 (fr) | 2017-02-01 | 2018-08-09 | D-Wave Systems Inc. | Systèmes et procédés de fabrication de circuits intégrés supraconducteurs |
| US20200152851A1 (en) | 2018-11-13 | 2020-05-14 | D-Wave Systems Inc. | Systems and methods for fabricating superconducting integrated circuits |
| US20240138268A1 (en) * | 2021-02-19 | 2024-04-25 | D-Wave Systems Inc. | Systems and methods for fabrication of superconducting integrated circuits with improved coherence |
| CN115598490B (zh) * | 2021-06-28 | 2024-04-05 | 本源量子计算科技（合肥）股份有限公司 | 量子芯片测试方法、装置、量子测控系统和量子计算机 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016000836A1 (fr) * | 2014-07-02 | 2016-01-07 | University Of Copenhagen | Jonction josephson à semi-conducteur et bit quantique à transmon associé |
| US10068181B1 (en) * | 2015-04-27 | 2018-09-04 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafer and methods for making the same |
| US10170681B1 (en) * | 2017-11-28 | 2019-01-01 | International Business Machines Corporation | Laser annealing of qubits with structured illumination |
| US10686007B2 (en) * | 2018-06-20 | 2020-06-16 | Intel Corporation | Quantum circuit assemblies with at least partially buried transmission lines and capacitors |
-
2020
- 2020-04-15 CA CA3137214A patent/CA3137214A1/fr active Pending
- 2020-04-15 IL IL286613A patent/IL286613B1/en unknown
- 2020-04-15 KR KR1020217032410A patent/KR20210143798A/ko active Search and Examination
- 2020-04-15 AU AU2020259830A patent/AU2020259830B2/en active Active
- 2020-04-15 EP EP20719425.9A patent/EP3956825A1/fr active Pending
- 2020-04-15 WO PCT/EP2020/060612 patent/WO2020212437A1/fr active Application Filing
- 2020-04-15 JP JP2021560186A patent/JP2022528739A/ja active Pending
- 2020-04-15 BR BR112021020936A patent/BR112021020936A2/pt unknown
- 2020-04-15 CN CN202080028974.4A patent/CN113711245A/zh active Pending
- 2020-04-15 SG SG11202109829P patent/SG11202109829PA/en unknown
- 2020-04-15 MX MX2021012618A patent/MX2021012618A/es unknown
Also Published As
| Publication number | Publication date |
|---|---|
| AU2020259830A1 (en) | 2021-09-30 |
| MX2021012618A (es) | 2021-11-12 |
| BR112021020936A2 (pt) | 2022-01-25 |
| IL286613A (en) | 2021-10-31 |
| KR20210143798A (ko) | 2021-11-29 |
| CN113711245A (zh) | 2021-11-26 |
| AU2020259830B2 (en) | 2023-08-10 |
| EP3956825A1 (fr) | 2022-02-23 |
| IL286613B1 (en) | 2024-02-01 |
| WO2020212437A1 (fr) | 2020-10-22 |
| JP2022528739A (ja) | 2022-06-15 |
| SG11202109829PA (en) | 2021-10-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU2020259830B2 (en) | Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices | |
| US11195982B2 (en) | Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices | |
| US11527697B2 (en) | Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices | |
| US11683996B2 (en) | Gate voltage-tunable electron system integrated with superconducting resonator for quantum computing device | |
| AU2020255132B2 (en) | Tunable superconducting resonator for quantum computing devices | |
| US11227229B2 (en) | Transmon qubit flip-chip structures for quantum computing devices | |
| US11489103B2 (en) | Fabricating transmon qubit flip-chip structures for quantum computing devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request |
Effective date: 20240206 |
|
| EEER | Examination request |
Effective date: 20240206 |