CA2613810C - Polythiophene electronic devices - Google Patents

Polythiophene electronic devices Download PDF

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Publication number
CA2613810C
CA2613810C CA2613810A CA2613810A CA2613810C CA 2613810 C CA2613810 C CA 2613810C CA 2613810 A CA2613810 A CA 2613810A CA 2613810 A CA2613810 A CA 2613810A CA 2613810 C CA2613810 C CA 2613810C
Authority
CA
Canada
Prior art keywords
accordance
alkyl
thin film
film transistor
substituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA2613810A
Other languages
English (en)
French (fr)
Other versions
CA2613810A1 (en
Inventor
Yuning Li
Beng S. Ong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of CA2613810A1 publication Critical patent/CA2613810A1/en
Application granted granted Critical
Publication of CA2613810C publication Critical patent/CA2613810C/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
    • C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
    • C08G61/126—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one sulfur atom in the ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/10—Definition of the polymer structure
    • C08G2261/14—Side-groups
    • C08G2261/142—Side-chains containing oxygen
    • C08G2261/1424—Side-chains containing oxygen containing ether groups, including alkoxy
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
    • C08G2261/322—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
    • C08G2261/3223—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more sulfur atoms as the only heteroatom, e.g. thiophene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/90—Applications
    • C08G2261/92—TFT applications
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Electroluminescent Light Sources (AREA)
CA2613810A 2006-12-14 2007-12-07 Polythiophene electronic devices Expired - Fee Related CA2613810C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/638,726 2006-12-14
US11/638,726 US7718999B2 (en) 2006-12-14 2006-12-14 Polythiophene electronic devices

Publications (2)

Publication Number Publication Date
CA2613810A1 CA2613810A1 (en) 2008-06-14
CA2613810C true CA2613810C (en) 2013-08-27

Family

ID=39273839

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2613810A Expired - Fee Related CA2613810C (en) 2006-12-14 2007-12-07 Polythiophene electronic devices

Country Status (6)

Country Link
US (1) US7718999B2 (https=)
EP (1) EP1932865A3 (https=)
JP (1) JP4874945B2 (https=)
CN (1) CN101207181A (https=)
CA (1) CA2613810C (https=)
TW (1) TW200840104A (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007311377A (ja) * 2006-05-16 2007-11-29 Sony Corp 薄膜トランジスタの製造方法および薄膜トランジスタならびに表示装置
KR100943146B1 (ko) * 2007-02-13 2010-02-18 주식회사 엘지화학 티아졸로티아졸 유도체를 이용한 유기 트랜지스터 및 이의제조방법
JP2009215546A (ja) * 2008-02-13 2009-09-24 Sumitomo Chemical Co Ltd 多環縮環化合物、多環縮環重合体及びこれらを含む有機薄膜
SG10201400519VA (en) 2009-03-18 2014-05-29 Lubrizol Advanced Mat Inc Thermoplastic polyurethane with reduced tendency to bloom
US8623478B2 (en) * 2009-03-31 2014-01-07 Dic Corporation Organic semiconductor ink composition and method for forming organic semiconductor pattern using the same
KR101097210B1 (ko) 2009-06-05 2011-12-21 (주)아이티켐 티오펜일 카바졸계 화합물 및 이를 이용한 유기전기발광 소자
DE102009030848A1 (de) 2009-06-26 2011-02-03 Merck Patent Gmbh Polymere enthaltend Struktureinheiten, die Alkylalkoxygruppen aufweisen, Blends enthaltend diese Polymere sowie optoelektronische Vorrichtungen enthaltend diese Polymere und Blends
US20110031475A1 (en) * 2009-08-10 2011-02-10 Xerox Corporation Semiconductor Composition
US8368052B2 (en) 2009-12-23 2013-02-05 Intel Corporation Techniques for forming contacts to quantum well transistors
KR101238183B1 (ko) 2010-12-31 2013-03-04 경상대학교산학협력단 알킬티오펜을 포함하는 교대 공중합체와 이를 이용한 유기 박막 트랜지스터
WO2015078775A2 (en) * 2013-11-28 2015-06-04 Rolic Ag Conducting and semi-conducting alignment materials
CN107431125B (zh) 2015-03-16 2020-01-07 富士胶片株式会社 有机半导体元件及其制造方法、化合物、有机半导体组合物和有机半导体膜及其制造方法
US10050203B2 (en) 2016-05-27 2018-08-14 Samsung Electronics Co., Ltd. Polymer and electronic device and organic thin film transistor including the same
CN119039575B (zh) * 2024-10-29 2025-02-18 链行走新材料科技(广州)有限公司 一种长醚链噻吩共聚物及其制备方法和应用

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61191501A (ja) * 1985-02-19 1986-08-26 Shozo Yanagida 導電性高分子を光触媒とする水素発生法
EP0203438A1 (en) 1985-05-31 1986-12-03 Corporation Allied Solution processible forms of neutral and electrically conductive poly(substituted heterocycles)
JP2902727B2 (ja) 1990-05-30 1999-06-07 株式会社日立製作所 荷電粒子線照射方法及び観察方法
KR0131435B1 (ko) 1994-03-28 1998-04-13 강박광 가공성이 있는 에스터기가 치환된 폴리 3-알킬티오펜 유도체 및 그의 제조방법
KR100207568B1 (ko) * 1994-08-27 1999-07-15 손욱 전도성 측쇄형 액정화합물 및 이를 사용한 배향막
US6770904B2 (en) * 2002-01-11 2004-08-03 Xerox Corporation Polythiophenes and electronic devices generated therefrom
US7250625B2 (en) * 2002-01-11 2007-07-31 Xerox Corporation Polythiophenes and electronic devices generated therefrom
US7141644B2 (en) 2002-01-11 2006-11-28 Xerox Corporation Polthiophenes and devices thereof
US7294850B2 (en) * 2004-06-10 2007-11-13 Xerox Corporation Device with small molecular thiophene compound having divalent linkage
US7402681B2 (en) * 2004-12-14 2008-07-22 Xerox Corporation Compound with indolocarbazole moieties and devices containing such compound
US20060124921A1 (en) * 2004-12-14 2006-06-15 Xerox Corporation Compound with indolocarbazole moieties and devices containing such compound
JP4731942B2 (ja) 2005-02-16 2011-07-27 住友化学株式会社 ポリチオフェン

Also Published As

Publication number Publication date
JP4874945B2 (ja) 2012-02-15
US20080142788A1 (en) 2008-06-19
TW200840104A (en) 2008-10-01
EP1932865A2 (en) 2008-06-18
CA2613810A1 (en) 2008-06-14
US7718999B2 (en) 2010-05-18
EP1932865A3 (en) 2008-07-23
JP2008153667A (ja) 2008-07-03
CN101207181A (zh) 2008-06-25

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Effective date: 20141208