CA2491242A1 - Method of manufacturing n-type semiconductor diamond, and n-type semiconductor diamond - Google Patents
Method of manufacturing n-type semiconductor diamond, and n-type semiconductor diamond Download PDFInfo
- Publication number
- CA2491242A1 CA2491242A1 CA002491242A CA2491242A CA2491242A1 CA 2491242 A1 CA2491242 A1 CA 2491242A1 CA 002491242 A CA002491242 A CA 002491242A CA 2491242 A CA2491242 A CA 2491242A CA 2491242 A1 CA2491242 A1 CA 2491242A1
- Authority
- CA
- Canada
- Prior art keywords
- diamond
- implantation
- ppm
- ions
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 177
- 239000010432 diamond Substances 0.000 title claims abstract description 177
- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 69
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 64
- 238000002513 implantation Methods 0.000 claims abstract description 59
- 238000000137 annealing Methods 0.000 claims abstract description 56
- 239000013078 crystal Substances 0.000 claims abstract description 54
- 238000005468 ion implantation Methods 0.000 claims abstract description 45
- 150000002500 ions Chemical class 0.000 claims abstract description 39
- 229910001416 lithium ion Inorganic materials 0.000 claims abstract description 10
- 238000010894 electron beam technology Methods 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 15
- 239000007943 implant Substances 0.000 claims description 12
- 238000010884 ion-beam technique Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 description 37
- 238000011156 evaluation Methods 0.000 description 20
- 230000005855 radiation Effects 0.000 description 18
- 230000006378 damage Effects 0.000 description 16
- 238000005259 measurement Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 239000002019 doping agent Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 230000005355 Hall effect Effects 0.000 description 10
- 238000010183 spectrum analysis Methods 0.000 description 10
- 238000001069 Raman spectroscopy Methods 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 230000001133 acceleration Effects 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000005465 channeling Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000008439 repair process Effects 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- FWXAUDSWDBGCMN-DNQXCXABSA-N [(2r,3r)-3-diphenylphosphanylbutan-2-yl]-diphenylphosphane Chemical compound C=1C=CC=CC=1P([C@H](C)[C@@H](C)P(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 FWXAUDSWDBGCMN-DNQXCXABSA-N 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- -1 boron ions Chemical class 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 235000012054 meals Nutrition 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 230000000135 prohibitive effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- LUBKKVGXMXTXOZ-QGZVFWFLSA-N (+)-geodin Chemical compound COC(=O)C1=CC(=O)C=C(OC)[C@@]11C(=O)C(C(O)=C(Cl)C(C)=C2Cl)=C2O1 LUBKKVGXMXTXOZ-QGZVFWFLSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101100352912 Caenorhabditis elegans tax-6 gene Proteins 0.000 description 1
- 101100352914 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) cna-1 gene Proteins 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000002153 concerted effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- IDBFBDSKYCUNPW-UHFFFAOYSA-N lithium nitride Chemical compound [Li]N([Li])[Li] IDBFBDSKYCUNPW-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H01L21/041—Making n- or p-doped regions
- H01L21/0415—Making n- or p-doped regions using ion implantation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003-368198 | 2003-10-29 | ||
| JP2003368198A JP2005132648A (ja) | 2003-10-29 | 2003-10-29 | ｎ型半導体ダイヤモンドの製造方法及びｎ型半導体ダイヤモンド |
| JP2003-390035 | 2003-11-20 | ||
| JP2003390035A JP4474905B2 (ja) | 2003-11-20 | 2003-11-20 | ｎ型半導体ダイヤモンドの製造方法及びｎ型半導体ダイヤモンド |
| PCT/JP2003/016493 WO2005041279A1 (ja) | 2003-10-29 | 2003-12-22 | ｎ型半導体ダイヤモンドの製造方法及びｎ型半導体ダイヤモンド |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2491242A1 true CA2491242A1 (en) | 2005-04-29 |
Family
ID=34525472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002491242A Abandoned CA2491242A1 (en) | 2003-10-29 | 2003-12-22 | Method of manufacturing n-type semiconductor diamond, and n-type semiconductor diamond |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20060177962A1 (enExample) |
| EP (1) | EP1713116A4 (enExample) |
| KR (1) | KR20060096177A (enExample) |
| AU (1) | AU2003289502A1 (enExample) |
| CA (1) | CA2491242A1 (enExample) |
| TW (1) | TW200514878A (enExample) |
| WO (1) | WO2005041279A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| HK1080122B (zh) * | 2002-09-06 | 2008-08-15 | 六号元素技术有限公司 | 着色的金刚石 |
| JP2004214264A (ja) * | 2002-12-27 | 2004-07-29 | Sumitomo Electric Ind Ltd | 低抵抗ｎ型半導体ダイヤモンドおよびその製造方法 |
| KR102374639B1 (ko) * | 2016-02-19 | 2022-03-16 | 한국전자통신연구원 | 불순물 주입 장치 및 이를 이용한 n형 반도체 다이아몬드의 형성방법 |
| DE102019117423A1 (de) * | 2019-06-27 | 2020-12-31 | Universität Leipzig | Verfahren zur Erzeugung zumindest eines deterministischen Farbzentrums in einer Diamantschicht |
| CN111863608B (zh) * | 2020-07-28 | 2023-05-19 | 哈尔滨工业大学 | 一种抗单粒子烧毁的大功率晶体管及其制作方法 |
| CN119245743B (zh) * | 2024-12-06 | 2025-03-07 | 山东大学 | 一种具备多信号感知功能的改性金刚石设计与制备方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3334286B2 (ja) * | 1993-09-30 | 2002-10-15 | ソニー株式会社 | ダイアモンド半導体の製造方法 |
| JPH11214321A (ja) * | 1998-01-27 | 1999-08-06 | Sumitomo Electric Ind Ltd | ダイヤモンド材料の改質方法と、その方法により改質されたダイヤモンド材料を用いた半導体装置 |
| JP3112163B2 (ja) * | 1999-03-19 | 2000-11-27 | 日本電気株式会社 | 結晶成長方法およびその結晶体 |
| JP3495943B2 (ja) * | 1999-03-26 | 2004-02-09 | シャープ株式会社 | 半導体ダイヤモンドの製造方法 |
| JP2001064094A (ja) * | 1999-08-24 | 2001-03-13 | Sharp Corp | 半導体ダイヤモンドの製造方法 |
| JP2004214264A (ja) * | 2002-12-27 | 2004-07-29 | Sumitomo Electric Ind Ltd | 低抵抗ｎ型半導体ダイヤモンドおよびその製造方法 |
-
2003
- 2003-12-22 AU AU2003289502A patent/AU2003289502A1/en not_active Abandoned
- 2003-12-22 KR KR1020057004098A patent/KR20060096177A/ko not_active Withdrawn
- 2003-12-22 US US10/541,184 patent/US20060177962A1/en not_active Abandoned
- 2003-12-22 EP EP03781011A patent/EP1713116A4/en not_active Withdrawn
- 2003-12-22 WO PCT/JP2003/016493 patent/WO2005041279A1/ja not_active Ceased
- 2003-12-22 CA CA002491242A patent/CA2491242A1/en not_active Abandoned
- 2003-12-25 TW TW092136851A patent/TW200514878A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US20060177962A1 (en) | 2006-08-10 |
| EP1713116A1 (en) | 2006-10-18 |
| TW200514878A (en) | 2005-05-01 |
| KR20060096177A (ko) | 2006-09-08 |
| WO2005041279A1 (ja) | 2005-05-06 |
| AU2003289502A1 (en) | 2005-05-11 |
| TWI316565B (enExample) | 2009-11-01 |
| EP1713116A4 (en) | 2009-07-01 |
| HK1078682A1 (zh) | 2006-03-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |