CA2247709A1 - Systeme optique de projection a quatre miroirs pour l'ultraviolet extreme - Google Patents

Systeme optique de projection a quatre miroirs pour l'ultraviolet extreme Download PDF

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Publication number
CA2247709A1
CA2247709A1 CA002247709A CA2247709A CA2247709A1 CA 2247709 A1 CA2247709 A1 CA 2247709A1 CA 002247709 A CA002247709 A CA 002247709A CA 2247709 A CA2247709 A CA 2247709A CA 2247709 A1 CA2247709 A1 CA 2247709A1
Authority
CA
Canada
Prior art keywords
mirror
concave mirror
convex mirror
convex
conjugate end
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002247709A
Other languages
English (en)
Inventor
David M. Williamson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SVG Lithography Systems Inc
Original Assignee
SVG Lithography Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SVG Lithography Systems Inc filed Critical SVG Lithography Systems Inc
Publication of CA2247709A1 publication Critical patent/CA2247709A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0657—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Abstract

L'invention est un système optique de projection à zone annulaire à réflexion intégrale pour la photolithographie à balayage utilisée dans la fabrication des plaquettes de semi-conducteur. Ce système de projection optique est conçu pour les longueurs d'onde dans l'ultraviolet extrême allant de 11 à 13 nm et sert à produire des champs d'image courbes pour un système de photolithographie à réduction et à balayage. Ce système optique utilise un ensemble ou une configuration de miroirs montés entre l'extrémité conjuguée longue et l'extrémité conjuguée courte, cet ensemble étant constitué par une suite de miroirs convexe, concave, convexe et concave, avec un diaphragme d'ouverture formé au second miroir convexe ou au voisinage de celui-ci. Cette suite de puissances de miroir permet d'obtenir un champ d'image relativement étendu tout en maintenant la distance entre le réticule et la plaquette inférieure à 900 mm. Le système de projection optique de l'invention produit un champ annulaire instantané pouvant atteindre 50 mm x 2 mm à la plaquette, ce qui permet au balayage de couvrir sur la plaquette un champ d'au moins 50 mm x 50 mm et accroît considérablement le débit. Il peut imprimer des détails mesurant à peine 0,05 micromètre.
CA002247709A 1997-09-18 1998-09-18 Systeme optique de projection a quatre miroirs pour l'ultraviolet extreme Abandoned CA2247709A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/933,272 1997-09-18
US08/933,272 US5956192A (en) 1997-09-18 1997-09-18 Four mirror EUV projection optics

Publications (1)

Publication Number Publication Date
CA2247709A1 true CA2247709A1 (fr) 1999-03-18

Family

ID=25463660

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002247709A Abandoned CA2247709A1 (fr) 1997-09-18 1998-09-18 Systeme optique de projection a quatre miroirs pour l'ultraviolet extreme

Country Status (6)

Country Link
US (1) US5956192A (fr)
EP (1) EP0903605B1 (fr)
JP (1) JP4309980B2 (fr)
KR (1) KR100597471B1 (fr)
CA (1) CA2247709A1 (fr)
DE (1) DE69813126T2 (fr)

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TW594438B (en) * 1997-11-07 2004-06-21 Koninkl Philips Electronics Nv Three-mirror system for lithographic projection, and projection apparatus comprising such a mirror system
DE10053587A1 (de) 2000-10-27 2002-05-02 Zeiss Carl Beleuchtungssystem mit variabler Einstellung der Ausleuchtung
US6577443B2 (en) 1998-05-30 2003-06-10 Carl-Zeiss Stiftung Reduction objective for extreme ultraviolet lithography
DE19923609A1 (de) * 1998-05-30 1999-12-02 Zeiss Carl Fa Ringfeld-4-Spiegelsysteme mit konvexem Primärspiegel für die EUV-Lithographie
US7151592B2 (en) * 1999-02-15 2006-12-19 Carl Zeiss Smt Ag Projection system for EUV lithography
US6985210B2 (en) * 1999-02-15 2006-01-10 Carl Zeiss Smt Ag Projection system for EUV lithography
USRE42118E1 (en) * 1999-02-15 2011-02-08 Carl-Zeiss-Smt Ag Projection system for EUV lithography
US6033079A (en) 1999-03-15 2000-03-07 Hudyma; Russell High numerical aperture ring field projection system for extreme ultraviolet lithography
US6188513B1 (en) 1999-03-15 2001-02-13 Russell Hudyma High numerical aperture ring field projection system for extreme ultraviolet lithography
JP4717974B2 (ja) * 1999-07-13 2011-07-06 株式会社ニコン 反射屈折光学系及び該光学系を備える投影露光装置
JP3770542B2 (ja) 1999-07-22 2006-04-26 コーニング インコーポレイテッド 遠紫外軟ｘ線投影リソグラフィー法およびマスク装置
EP1093021A3 (fr) 1999-10-15 2004-06-30 Nikon Corporation Système d'exposition par projection, ainsi qu'un appareil et des méthodes utilisant ce système
WO2002044786A2 (fr) * 2000-11-28 2002-06-06 Carl Zeiss Smt Ag Systeme de projection catadioptrique pour une lithographie a 157 nm
TW538256B (en) * 2000-01-14 2003-06-21 Zeiss Stiftung Microlithographic reduction projection catadioptric objective
US6776006B2 (en) 2000-10-13 2004-08-17 Corning Incorporated Method to avoid striae in EUV lithography mirrors
TW573234B (en) 2000-11-07 2004-01-21 Asml Netherlands Bv Lithographic projection apparatus and integrated circuit device manufacturing method
US6558261B1 (en) 2000-11-15 2003-05-06 Honeywell International Inc. Actuator drive and display mechanism
US6829908B2 (en) 2002-02-27 2004-12-14 Corning Incorporated Fabrication of inclusion free homogeneous glasses
US6832493B2 (en) 2002-02-27 2004-12-21 Corning Incorporated High purity glass bodies formed by zero shrinkage casting
US20030235682A1 (en) * 2002-06-21 2003-12-25 Sogard Michael R. Method and device for controlling thermal distortion in elements of a lithography system
US6975385B2 (en) * 2002-11-08 2005-12-13 Canon Kabushiki Kaisha Projection optical system and exposure apparatus
US6853440B1 (en) 2003-04-04 2005-02-08 Asml Netherlands B.V. Position correction in Y of mask object shift due to Z offset and non-perpendicular illumination
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US7466489B2 (en) * 2003-12-15 2008-12-16 Susanne Beder Projection objective having a high aperture and a planar end surface
WO2005059645A2 (fr) * 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Objectif de projection de microlithographie comprenant des éléments cristallins
US20080151364A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
US7463422B2 (en) * 2004-01-14 2008-12-09 Carl Zeiss Smt Ag Projection exposure apparatus
CN102830487A (zh) * 2004-01-14 2012-12-19 卡尔蔡司Smt有限责任公司 反射折射投影物镜
WO2005098504A1 (fr) 2004-04-08 2005-10-20 Carl Zeiss Smt Ag Systeme d'imagerie comprenant un groupe de miroirs
WO2005111689A2 (fr) 2004-05-17 2005-11-24 Carl Zeiss Smt Ag Objectif de projection catadioptrique avec images intermediaires
JP4337648B2 (ja) * 2004-06-24 2009-09-30 株式会社ニコン Ｅｕｖ光源、ｅｕｖ露光装置、及び半導体デバイスの製造方法
EP2192446B1 (fr) * 2005-03-08 2011-10-19 Carl Zeiss SMT GmbH Système de projection pour microlithographie a diaphragme accessible
KR101309880B1 (ko) * 2005-05-13 2013-09-17 칼 짜이스 에스엠티 게엠베하 낮은 입사각을 갖는 육-미러 ｅｕｖ 프로젝션 시스템
JP5045429B2 (ja) * 2007-12-27 2012-10-10 コニカミノルタアドバンストレイヤー株式会社 斜め投射光学系
JP5294804B2 (ja) * 2008-10-31 2013-09-18 三菱電機株式会社 光学調整装置
DE102009008644A1 (de) * 2009-02-12 2010-11-18 Carl Zeiss Smt Ag Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithografie mit einer derartigen abbildenden Optik
JP4935886B2 (ja) * 2009-12-10 2012-05-23 三菱電機株式会社 画像読取装置
WO2013118615A1 (fr) 2012-02-06 2013-08-15 株式会社ニコン Système optique de formation d'une image réfléchissante, appareil d'exposition et procédé de fabrication d'un dispositif
CN105589305B (zh) * 2015-12-21 2017-10-03 中国科学院长春光学精密机械与物理研究所 微缩投影系统波像差检测过程中的视场点定位方法
JP2018157503A (ja) * 2017-03-21 2018-10-04 富士ゼロックス株式会社 読取装置

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US3748015A (en) * 1971-06-21 1973-07-24 Perkin Elmer Corp Unit power imaging catoptric anastigmat
US4240707A (en) * 1978-12-07 1980-12-23 Itek Corporation All-reflective three element objective
US4650315A (en) * 1985-05-10 1987-03-17 The Perkin-Elmer Corporation Optical lithographic system
US4733955A (en) * 1986-04-14 1988-03-29 Hughes Aircraft Company Reflective optical triplet having a real entrance pupil
EP0947882B1 (fr) * 1986-07-11 2006-03-29 Canon Kabushiki Kaisha Système d'exposition, par projection en réduction, de rayons X, du type réflectif
US4747678A (en) * 1986-12-17 1988-05-31 The Perkin-Elmer Corporation Optical relay system with magnification
US5063586A (en) * 1989-10-13 1991-11-05 At&T Bell Laboratories Apparatus for semiconductor lithography
US5315629A (en) * 1990-10-10 1994-05-24 At&T Bell Laboratories Ringfield lithography
US5353322A (en) * 1992-05-05 1994-10-04 Tropel Corporation Lens system for X-ray projection lithography camera
US5410434A (en) * 1993-09-09 1995-04-25 Ultratech Stepper, Inc. Reflective projection system comprising four spherical mirrors
US5815310A (en) * 1995-12-12 1998-09-29 Svg Lithography Systems, Inc. High numerical aperture ring field optical reduction system

Also Published As

Publication number Publication date
DE69813126D1 (de) 2003-05-15
KR100597471B1 (ko) 2006-10-24
EP0903605A3 (fr) 2000-05-17
JPH11249313A (ja) 1999-09-17
EP0903605A2 (fr) 1999-03-24
EP0903605B1 (fr) 2003-04-09
DE69813126T2 (de) 2004-03-04
US5956192A (en) 1999-09-21
KR19990029826A (ko) 1999-04-26
JP4309980B2 (ja) 2009-08-05

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Legal Events

Date Code Title Description
FZDE Discontinued
FZDE Discontinued

Effective date: 20030918