CA1261785A - Method for control of etch profile - Google Patents

Method for control of etch profile

Info

Publication number
CA1261785A
CA1261785A CA000504799A CA504799A CA1261785A CA 1261785 A CA1261785 A CA 1261785A CA 000504799 A CA000504799 A CA 000504799A CA 504799 A CA504799 A CA 504799A CA 1261785 A CA1261785 A CA 1261785A
Authority
CA
Canada
Prior art keywords
layer
etching
chf3
opening
silicon dioxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000504799A
Other languages
English (en)
French (fr)
Inventor
Lee Chen
Gangadhara S. Mathad
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1261785A publication Critical patent/CA1261785A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
CA000504799A 1985-05-06 1986-03-24 Method for control of etch profile Expired CA1261785A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/730,976 US4671849A (en) 1985-05-06 1985-05-06 Method for control of etch profile
US730,976 1985-05-06

Publications (1)

Publication Number Publication Date
CA1261785A true CA1261785A (en) 1989-09-26

Family

ID=24937562

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000504799A Expired CA1261785A (en) 1985-05-06 1986-03-24 Method for control of etch profile

Country Status (5)

Country Link
US (1) US4671849A (enExample)
EP (1) EP0201037B1 (enExample)
JP (1) JPS61256724A (enExample)
CA (1) CA1261785A (enExample)
DE (1) DE3679933D1 (enExample)

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US5174857A (en) * 1990-10-29 1992-12-29 Gold Star Co., Ltd. Slope etching process
US5317938A (en) * 1992-01-16 1994-06-07 Duke University Method for making microstructural surgical instruments
US5880036A (en) * 1992-06-15 1999-03-09 Micron Technology, Inc. Method for enhancing oxide to nitride selectivity through the use of independent heat control
US5651855A (en) * 1992-07-28 1997-07-29 Micron Technology, Inc. Method of making self aligned contacts to silicon substrates during the manufacture of integrated circuits
JP2787646B2 (ja) 1992-11-27 1998-08-20 三菱電機株式会社 半導体装置の製造方法
US5466626A (en) * 1993-12-16 1995-11-14 International Business Machines Corporation Micro mask comprising agglomerated material
US6870272B2 (en) * 1994-09-20 2005-03-22 Tessera, Inc. Methods of making microelectronic assemblies including compliant interfaces
US5842387A (en) * 1994-11-07 1998-12-01 Marcus; Robert B. Knife blades having ultra-sharp cutting edges and methods of fabrication
US6040247A (en) * 1995-01-10 2000-03-21 Lg Semicon Co., Ltd. Method for etching contact
US6284563B1 (en) * 1995-10-31 2001-09-04 Tessera, Inc. Method of making compliant microelectronic assemblies
US6211572B1 (en) * 1995-10-31 2001-04-03 Tessera, Inc. Semiconductor chip package with fan-in leads
KR0179792B1 (ko) * 1995-12-27 1999-04-15 문정환 고밀도 플라즈마 식각장비를 이용한 슬로프 콘택 홀 형성방법
KR0179791B1 (ko) * 1995-12-27 1999-03-20 문정환 플래쉬 메모리 소자 및 그 제조방법
US6033991A (en) * 1997-09-29 2000-03-07 Cypress Semiconductor Corporation Isolation scheme based on recessed locos using a sloped Si etch and dry field oxidation
US6074957A (en) * 1998-02-26 2000-06-13 Micron Technology, Inc. Methods of forming openings and methods of controlling the degree of taper of openings
AU2002220595A1 (en) 2000-10-11 2002-04-22 Koninklijke Philips Electronics N.V. Scalable coding of multi-media objects
US20050161429A1 (en) * 2002-02-07 2005-07-28 Andrew Sauciunac Non-symmetrical photo tooling and dual surface etching
RU2314905C2 (ru) 2002-03-11 2008-01-20 Бектон, Дикинсон Энд Компани Способ изготовления хирургических лезвий (варианты)
US7387742B2 (en) * 2002-03-11 2008-06-17 Becton, Dickinson And Company Silicon blades for surgical and non-surgical use
US20040087153A1 (en) * 2002-10-31 2004-05-06 Yan Du Method of etching a silicon-containing dielectric material
US7355687B2 (en) * 2003-02-20 2008-04-08 Hunter Engineering Company Method and apparatus for vehicle service system with imaging components
JP2006518944A (ja) * 2003-02-25 2006-08-17 テッセラ，インコーポレイテッド バンプを有するボールグリッドアレー
US20050155955A1 (en) * 2003-03-10 2005-07-21 Daskal Vadim M. Method for reducing glare and creating matte finish of controlled density on a silicon surface
US20090007436A1 (en) * 2003-03-10 2009-01-08 Daskal Vadim M Silicon blades for surgical and non-surgical use
JP2007514457A (ja) * 2003-09-17 2007-06-07 ベクトン・ディキンソン・アンド・カンパニー シリコンおよびその他の結晶質材料にルータを用いて直線状および非直線状の溝を作成するシステムおよび方法
US20050211171A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Chemical vapor deposition plasma reactor having an ion shower grid
US7244474B2 (en) * 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7695590B2 (en) * 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US20050211547A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Reactive sputter deposition plasma reactor and process using plural ion shower grids
US20050211546A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Reactive sputter deposition plasma process using an ion shower grid
US7291360B2 (en) * 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US7396484B2 (en) * 2004-04-30 2008-07-08 Becton, Dickinson And Company Methods of fabricating complex blade geometries from silicon wafers and strengthening blade geometries
US8058156B2 (en) * 2004-07-20 2011-11-15 Applied Materials, Inc. Plasma immersion ion implantation reactor having multiple ion shower grids
US7767561B2 (en) * 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
JP4484641B2 (ja) * 2004-09-10 2010-06-16 Ｏｋｉセミコンダクタ株式会社 強誘電体メモリの製造方法
EP1851798B1 (en) * 2005-02-25 2016-08-03 Tessera, Inc. Microelectronic assemblies having compliancy
US7883631B2 (en) * 2006-03-07 2011-02-08 Tokyo Electron Limited Plasma etching method, plasma etching apparatus, control program and computer-readable storage medium
US7749886B2 (en) * 2006-12-20 2010-07-06 Tessera, Inc. Microelectronic assemblies having compliancy and methods therefor
US8196285B1 (en) * 2008-12-17 2012-06-12 Western Digital (Fremont), Llc Method and system for providing a pole for a perpendicular magnetic recording head using a multi-layer hard mask
US8254060B1 (en) 2009-04-17 2012-08-28 Western Digital (Fremont), Llc Straight top main pole for PMR bevel writer
US8225488B1 (en) 2009-05-22 2012-07-24 Western Digital (Fremont), Llc Method for providing a perpendicular magnetic recording (PMR) pole
US9346672B1 (en) 2009-08-04 2016-05-24 Western Digital (Fremont), Llc Methods for fabricating damascene write poles using ruthenium hard masks
US8298881B2 (en) 2010-06-28 2012-10-30 International Business Machines Corporation Nanowire FET with trapezoid gate structure
US8525338B2 (en) 2011-06-07 2013-09-03 Tessera, Inc. Chip with sintered connections to package
EP2819162B1 (en) 2013-06-24 2020-06-17 IMEC vzw Method for producing contact areas on a semiconductor substrate

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Publication number Priority date Publication date Assignee Title
GB1417085A (en) * 1973-05-17 1975-12-10 Standard Telephones Cables Ltd Plasma etching
DE2658448C3 (de) * 1976-12-23 1979-09-20 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum Ätzen einer auf einem Halbleiterkörper aufgebrachten Schicht aus Siliciumnitrid in einem Gasplasma
US4283249A (en) * 1979-05-02 1981-08-11 International Business Machines Corporation Reactive ion etching
US4324611A (en) * 1980-06-26 1982-04-13 Branson International Plasma Corporation Process and gas mixture for etching silicon dioxide and silicon nitride
JPS57164529A (en) * 1981-04-03 1982-10-09 Oki Electric Ind Co Ltd Dry etching method
US4409319A (en) * 1981-07-15 1983-10-11 International Business Machines Corporation Electron beam exposed positive resist mask process
JPS58197820A (ja) * 1982-05-14 1983-11-17 Nippon Telegr & Teleph Corp <Ntt> プラズマエツチング方法
US4417947A (en) * 1982-07-16 1983-11-29 Signetics Corporation Edge profile control during patterning of silicon by dry etching with CCl4 -O2 mixtures
DE3306703A1 (de) * 1983-02-25 1984-08-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von halbleitervorrichtungen
US4511430A (en) * 1984-01-30 1985-04-16 International Business Machines Corporation Control of etch rate ratio of SiO2 /photoresist for quartz planarization etch back process
JPS60182136A (ja) * 1984-02-29 1985-09-17 Fujitsu Ltd エツチング方法
US4484979A (en) * 1984-04-16 1984-11-27 At&T Bell Laboratories Two-step anisotropic etching process for patterning a layer without penetrating through an underlying thinner layer
JPS61114530A (ja) * 1984-11-09 1986-06-02 Oki Electric Ind Co Ltd ドライエツチング方法及びその装置

Also Published As

Publication number Publication date
EP0201037A2 (en) 1986-11-12
US4671849A (en) 1987-06-09
EP0201037A3 (en) 1988-03-23
EP0201037B1 (en) 1991-06-26
JPH0519977B2 (enExample) 1993-03-18
DE3679933D1 (de) 1991-08-01
JPS61256724A (ja) 1986-11-14

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