CA1210527A - Semiconductor device of the hetero-junction transistor type - Google Patents
Semiconductor device of the hetero-junction transistor typeInfo
- Publication number
- CA1210527A CA1210527A CA000419430A CA419430A CA1210527A CA 1210527 A CA1210527 A CA 1210527A CA 000419430 A CA000419430 A CA 000419430A CA 419430 A CA419430 A CA 419430A CA 1210527 A CA1210527 A CA 1210527A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- source
- semiconductor device
- gate
- hetero
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 239000000463 material Substances 0.000 claims description 30
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000002800 charge carrier Substances 0.000 claims description 5
- 239000000969 carrier Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 230000007423 decrease Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000009825 accumulation Methods 0.000 abstract description 5
- 230000003993 interaction Effects 0.000 abstract description 5
- 230000010287 polarization Effects 0.000 abstract description 5
- 241001663154 Electron Species 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 12
- 239000012535 impurity Substances 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 8
- 238000009740 moulding (composite fabrication) Methods 0.000 description 5
- 230000035508 accumulation Effects 0.000 description 4
- 235000010210 aluminium Nutrition 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000000543 intermediate Substances 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 101100508071 Solanum lycopersicum PIIF gene Proteins 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000001976 improved effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- STEPQTYSZVCJPV-UHFFFAOYSA-N metazachlor Chemical compound CC1=CC=CC(C)=C1N(C(=O)CCl)CN1N=CC=C1 STEPQTYSZVCJPV-UHFFFAOYSA-N 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000003334 potential effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
- H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
Landscapes
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8200682 | 1982-01-18 | ||
| FR8200682A FR2520157B1 (fr) | 1982-01-18 | 1982-01-18 | Dispositif semi-conducteur du genre transistor a heterojonction(s) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1210527A true CA1210527A (en) | 1986-08-26 |
Family
ID=9270068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000419430A Expired CA1210527A (en) | 1982-01-18 | 1983-01-13 | Semiconductor device of the hetero-junction transistor type |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4758868A (enExample) |
| EP (1) | EP0084393B1 (enExample) |
| JP (1) | JPS58127383A (enExample) |
| CA (1) | CA1210527A (enExample) |
| DE (1) | DE3362975D1 (enExample) |
| FR (1) | FR2520157B1 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4910562A (en) * | 1982-04-26 | 1990-03-20 | International Business Machines Corporation | Field induced base transistor |
| US4532533A (en) * | 1982-04-27 | 1985-07-30 | International Business Machines Corporation | Ballistic conduction semiconductor device |
| JPH0810763B2 (ja) * | 1983-12-28 | 1996-01-31 | 株式会社日立製作所 | 半導体装置 |
| US4712122A (en) * | 1984-07-26 | 1987-12-08 | Research Development Corp. | Heterojunction gate ballistic JFET with channel thinner than Debye length |
| US4800415A (en) * | 1984-09-21 | 1989-01-24 | American Telephone And Telegraph Company, At&T Bell Laboratories | Bipolar inversion channel device |
| US4691215A (en) * | 1985-01-09 | 1987-09-01 | American Telephone And Telegraph Company | Hot electron unipolar transistor with two-dimensional degenerate electron gas base with continuously graded composition compound emitter |
| JPH088350B2 (ja) * | 1985-04-08 | 1996-01-29 | 日本電気株式会社 | 半導体装置 |
| JPS61248561A (ja) * | 1985-04-25 | 1986-11-05 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | 半導体構造体 |
| US4806997A (en) * | 1985-06-14 | 1989-02-21 | AT&T Laboratories American Telephone and Telegraph Company | Double heterostructure optoelectronic switch |
| US5059545A (en) * | 1985-08-23 | 1991-10-22 | Texas Instruments Incorporated | Three terminal tunneling device and method |
| US4959696A (en) * | 1985-08-23 | 1990-09-25 | Texas Instruments Incorporated | Three terminal tunneling device and method |
| EP0216155A3 (en) * | 1985-08-23 | 1989-03-15 | Texas Instruments Incorporated | Three-terminal tunnelling device |
| US4994882A (en) * | 1986-11-05 | 1991-02-19 | University Of Illinois | Semiconductor device and method |
| FR2611305B1 (fr) * | 1987-02-20 | 1990-04-27 | Labo Electronique Physique | Circuit comportant des lignes conductrices pour le transfert de signaux rapides |
| EP0314836A1 (en) * | 1987-11-06 | 1989-05-10 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Semiconductor device in particular a hot electron transistor |
| US5172194A (en) * | 1987-09-16 | 1992-12-15 | National Science Council | Structures of modulation doped base hot electron transistors |
| US4872744A (en) * | 1988-01-15 | 1989-10-10 | Bell Communications Research, Inc. | Single quantum well optical modulator |
| US5023671A (en) * | 1989-03-27 | 1991-06-11 | International Business Machines Corporation | Microstructures which provide superlattice effects and one-dimensional carrier gas channels |
| US5179037A (en) * | 1991-12-24 | 1993-01-12 | Texas Instruments Incorporated | Integration of lateral and vertical quantum well transistors in the same epitaxial stack |
| US8080824B2 (en) * | 2006-11-15 | 2011-12-20 | Academia Sinica | Suppressing recombination in an electronic device |
| USD713655S1 (en) | 2013-05-31 | 2014-09-23 | Zzz Sock, LLC | Mattress cover |
| US9265368B2 (en) | 2013-05-31 | 2016-02-23 | Zzz Sock, LLC | Bedding apparatus |
| USD792124S1 (en) | 2013-05-31 | 2017-07-18 | Zzz Sock, LLC | Mattress cover |
| US9247835B2 (en) | 2013-05-31 | 2016-02-02 | Zzz Sock, LLC | Bedding apparatus |
| CA2972678C (en) * | 2015-01-12 | 2022-07-26 | Helmut WEIDLICH | Device for guiding charge carriers and use thereof |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4163237A (en) * | 1978-04-24 | 1979-07-31 | Bell Telephone Laboratories, Incorporated | High mobility multilayered heterojunction devices employing modulated doping |
| US4194935A (en) * | 1978-04-24 | 1980-03-25 | Bell Telephone Laboratories, Incorporated | Method of making high mobility multilayered heterojunction devices employing modulated doping |
| DE2847451C2 (de) * | 1978-11-02 | 1986-06-12 | Telefunken electronic GmbH, 7100 Heilbronn | Halbleiterbauelement und Verfahren zum Herstellen |
| FR2465318A1 (fr) * | 1979-09-10 | 1981-03-20 | Thomson Csf | Transistor a effet de champ a frequence de coupure elevee |
| FR2469002A1 (fr) * | 1979-10-26 | 1981-05-08 | Thomson Csf | Dispositif semiconducteur a effet de champ pour hautes frequences et transistor et dispositif a transfert de charges utilisant un tel semiconducteur |
| DE3072175D1 (de) * | 1979-12-28 | 1990-04-26 | Fujitsu Ltd | Halbleitervorrichtungen mit heterouebergang. |
| US4286275A (en) * | 1980-02-04 | 1981-08-25 | International Business Machines Corporation | Semiconductor device |
| JPS5946103B2 (ja) * | 1980-03-10 | 1984-11-10 | 日本電信電話株式会社 | トランジスタ |
| JPS56133867A (en) * | 1980-03-21 | 1981-10-20 | Semiconductor Res Found | Thermoelectric emission transistor |
| US4366493A (en) * | 1980-06-20 | 1982-12-28 | International Business Machines Corporation | Semiconductor ballistic transport device |
| FR2493604A1 (fr) * | 1980-10-31 | 1982-05-07 | Thomson Csf | Transistors a effet de champ a grille ultra courte |
| US4396931A (en) * | 1981-06-12 | 1983-08-02 | International Business Machines Corporation | Tunnel emitter upper valley transistor |
| US4460910A (en) * | 1981-11-23 | 1984-07-17 | International Business Machines Corporation | Heterojunction semiconductor |
-
1982
- 1982-01-18 FR FR8200682A patent/FR2520157B1/fr not_active Expired
-
1983
- 1983-01-12 DE DE8383200040T patent/DE3362975D1/de not_active Expired
- 1983-01-12 EP EP83200040A patent/EP0084393B1/fr not_active Expired
- 1983-01-13 CA CA000419430A patent/CA1210527A/en not_active Expired
- 1983-01-18 JP JP58006550A patent/JPS58127383A/ja active Granted
-
1987
- 1987-10-21 US US07/112,030 patent/US4758868A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE3362975D1 (en) | 1986-05-22 |
| US4758868A (en) | 1988-07-19 |
| JPS58127383A (ja) | 1983-07-29 |
| EP0084393B1 (fr) | 1986-04-16 |
| FR2520157A1 (fr) | 1983-07-22 |
| EP0084393A2 (fr) | 1983-07-27 |
| FR2520157B1 (fr) | 1985-09-13 |
| JPH0261147B2 (enExample) | 1990-12-19 |
| EP0084393A3 (en) | 1983-08-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4758868A (en) | Ballistic hetero-junction transistor with transverse two dimensional electron gas layer | |
| EP0133342B1 (en) | A superlattice type semiconductor structure having a high carrier density | |
| EP0549373B1 (en) | Tunnel transistor and method of manufacturing same | |
| US4727403A (en) | Double heterojunction semiconductor device with injector | |
| CA1092723A (en) | High speed semiconductor device | |
| US4847666A (en) | Hot electron transistors | |
| US5001536A (en) | Semiconductor device | |
| US5047810A (en) | Optically controlled resonant tunneling electronic devices | |
| US5023674A (en) | Field effect transistor | |
| US4758870A (en) | Semiconductor device | |
| US5831296A (en) | Semiconductor device | |
| EP0051271B1 (en) | Heterojunction semiconductor device | |
| US4878095A (en) | Semiconductor device in particular a hot electron transistor | |
| US4691215A (en) | Hot electron unipolar transistor with two-dimensional degenerate electron gas base with continuously graded composition compound emitter | |
| US4716445A (en) | Heterojunction bipolar transistor having a base region of germanium | |
| Yoo et al. | Influence of spacer layer thickness on the current‐voltage characteristics of AlGaAs/GaAs and AlGaAs/InGaAs resonant tunneling diodes | |
| KR920010584B1 (ko) | 반도체 장치 | |
| US4532533A (en) | Ballistic conduction semiconductor device | |
| US5270225A (en) | Method of making a resonant tunneling semiconductor device | |
| JPH0312769B2 (enExample) | ||
| US4916495A (en) | Semiconductor device with semi-metal | |
| EP0229672B1 (en) | A heterojunction bipolar transistor having a base region of germanium | |
| JPS6052060A (ja) | 電界効果トランジスタ | |
| JPH0795598B2 (ja) | 半導体装置 | |
| JPH061783B2 (ja) | 半導体装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |