FR2520157B1 - Dispositif semi-conducteur du genre transistor a heterojonction(s) - Google Patents

Dispositif semi-conducteur du genre transistor a heterojonction(s)

Info

Publication number
FR2520157B1
FR2520157B1 FR8200682A FR8200682A FR2520157B1 FR 2520157 B1 FR2520157 B1 FR 2520157B1 FR 8200682 A FR8200682 A FR 8200682A FR 8200682 A FR8200682 A FR 8200682A FR 2520157 B1 FR2520157 B1 FR 2520157B1
Authority
FR
France
Prior art keywords
semiconductor device
transistor type
heterojunction transistor
heterojunction
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8200682A
Other languages
English (en)
French (fr)
Other versions
FR2520157A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoires dElectronique Philips SAS
Original Assignee
Laboratoires dElectronique et de Physique Appliquee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoires dElectronique et de Physique Appliquee filed Critical Laboratoires dElectronique et de Physique Appliquee
Priority to FR8200682A priority Critical patent/FR2520157B1/fr
Priority to DE8383200040T priority patent/DE3362975D1/de
Priority to EP83200040A priority patent/EP0084393B1/fr
Priority to CA000419430A priority patent/CA1210527A/en
Priority to JP58006550A priority patent/JPS58127383A/ja
Publication of FR2520157A1 publication Critical patent/FR2520157A1/fr
Application granted granted Critical
Publication of FR2520157B1 publication Critical patent/FR2520157B1/fr
Priority to US07/112,030 priority patent/US4758868A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
FR8200682A 1982-01-18 1982-01-18 Dispositif semi-conducteur du genre transistor a heterojonction(s) Expired FR2520157B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR8200682A FR2520157B1 (fr) 1982-01-18 1982-01-18 Dispositif semi-conducteur du genre transistor a heterojonction(s)
DE8383200040T DE3362975D1 (en) 1982-01-18 1983-01-12 Semiconductor device of the heterojunction transistor type
EP83200040A EP0084393B1 (fr) 1982-01-18 1983-01-12 Dispositif semiconducteur du genre transistor à hétérojonction(s)
CA000419430A CA1210527A (en) 1982-01-18 1983-01-13 Semiconductor device of the hetero-junction transistor type
JP58006550A JPS58127383A (ja) 1982-01-18 1983-01-18 ヘテロ接合トランジスタ形半導体装置
US07/112,030 US4758868A (en) 1982-01-18 1987-10-21 Ballistic hetero-junction transistor with transverse two dimensional electron gas layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8200682A FR2520157B1 (fr) 1982-01-18 1982-01-18 Dispositif semi-conducteur du genre transistor a heterojonction(s)

Publications (2)

Publication Number Publication Date
FR2520157A1 FR2520157A1 (fr) 1983-07-22
FR2520157B1 true FR2520157B1 (fr) 1985-09-13

Family

ID=9270068

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8200682A Expired FR2520157B1 (fr) 1982-01-18 1982-01-18 Dispositif semi-conducteur du genre transistor a heterojonction(s)

Country Status (6)

Country Link
US (1) US4758868A (enExample)
EP (1) EP0084393B1 (enExample)
JP (1) JPS58127383A (enExample)
CA (1) CA1210527A (enExample)
DE (1) DE3362975D1 (enExample)
FR (1) FR2520157B1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4910562A (en) * 1982-04-26 1990-03-20 International Business Machines Corporation Field induced base transistor
US4532533A (en) * 1982-04-27 1985-07-30 International Business Machines Corporation Ballistic conduction semiconductor device
JPH0810763B2 (ja) * 1983-12-28 1996-01-31 株式会社日立製作所 半導体装置
US4712122A (en) * 1984-07-26 1987-12-08 Research Development Corp. Heterojunction gate ballistic JFET with channel thinner than Debye length
US4800415A (en) * 1984-09-21 1989-01-24 American Telephone And Telegraph Company, At&T Bell Laboratories Bipolar inversion channel device
US4691215A (en) * 1985-01-09 1987-09-01 American Telephone And Telegraph Company Hot electron unipolar transistor with two-dimensional degenerate electron gas base with continuously graded composition compound emitter
JPH088350B2 (ja) * 1985-04-08 1996-01-29 日本電気株式会社 半導体装置
JPS61248561A (ja) * 1985-04-25 1986-11-05 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション 半導体構造体
US4806997A (en) * 1985-06-14 1989-02-21 AT&T Laboratories American Telephone and Telegraph Company Double heterostructure optoelectronic switch
US5059545A (en) * 1985-08-23 1991-10-22 Texas Instruments Incorporated Three terminal tunneling device and method
US4959696A (en) * 1985-08-23 1990-09-25 Texas Instruments Incorporated Three terminal tunneling device and method
EP0216155A3 (en) * 1985-08-23 1989-03-15 Texas Instruments Incorporated Three-terminal tunnelling device
US4994882A (en) * 1986-11-05 1991-02-19 University Of Illinois Semiconductor device and method
FR2611305B1 (fr) * 1987-02-20 1990-04-27 Labo Electronique Physique Circuit comportant des lignes conductrices pour le transfert de signaux rapides
EP0314836A1 (en) * 1987-11-06 1989-05-10 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Semiconductor device in particular a hot electron transistor
US5172194A (en) * 1987-09-16 1992-12-15 National Science Council Structures of modulation doped base hot electron transistors
US4872744A (en) * 1988-01-15 1989-10-10 Bell Communications Research, Inc. Single quantum well optical modulator
US5023671A (en) * 1989-03-27 1991-06-11 International Business Machines Corporation Microstructures which provide superlattice effects and one-dimensional carrier gas channels
US5179037A (en) * 1991-12-24 1993-01-12 Texas Instruments Incorporated Integration of lateral and vertical quantum well transistors in the same epitaxial stack
US8080824B2 (en) * 2006-11-15 2011-12-20 Academia Sinica Suppressing recombination in an electronic device
USD713655S1 (en) 2013-05-31 2014-09-23 Zzz Sock, LLC Mattress cover
US9265368B2 (en) 2013-05-31 2016-02-23 Zzz Sock, LLC Bedding apparatus
USD792124S1 (en) 2013-05-31 2017-07-18 Zzz Sock, LLC Mattress cover
US9247835B2 (en) 2013-05-31 2016-02-02 Zzz Sock, LLC Bedding apparatus
CA2972678C (en) * 2015-01-12 2022-07-26 Helmut WEIDLICH Device for guiding charge carriers and use thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163237A (en) * 1978-04-24 1979-07-31 Bell Telephone Laboratories, Incorporated High mobility multilayered heterojunction devices employing modulated doping
US4194935A (en) * 1978-04-24 1980-03-25 Bell Telephone Laboratories, Incorporated Method of making high mobility multilayered heterojunction devices employing modulated doping
DE2847451C2 (de) * 1978-11-02 1986-06-12 Telefunken electronic GmbH, 7100 Heilbronn Halbleiterbauelement und Verfahren zum Herstellen
FR2465318A1 (fr) * 1979-09-10 1981-03-20 Thomson Csf Transistor a effet de champ a frequence de coupure elevee
FR2469002A1 (fr) * 1979-10-26 1981-05-08 Thomson Csf Dispositif semiconducteur a effet de champ pour hautes frequences et transistor et dispositif a transfert de charges utilisant un tel semiconducteur
DE3072175D1 (de) * 1979-12-28 1990-04-26 Fujitsu Ltd Halbleitervorrichtungen mit heterouebergang.
US4286275A (en) * 1980-02-04 1981-08-25 International Business Machines Corporation Semiconductor device
JPS5946103B2 (ja) * 1980-03-10 1984-11-10 日本電信電話株式会社 トランジスタ
JPS56133867A (en) * 1980-03-21 1981-10-20 Semiconductor Res Found Thermoelectric emission transistor
US4366493A (en) * 1980-06-20 1982-12-28 International Business Machines Corporation Semiconductor ballistic transport device
FR2493604A1 (fr) * 1980-10-31 1982-05-07 Thomson Csf Transistors a effet de champ a grille ultra courte
US4396931A (en) * 1981-06-12 1983-08-02 International Business Machines Corporation Tunnel emitter upper valley transistor
US4460910A (en) * 1981-11-23 1984-07-17 International Business Machines Corporation Heterojunction semiconductor

Also Published As

Publication number Publication date
DE3362975D1 (en) 1986-05-22
US4758868A (en) 1988-07-19
CA1210527A (en) 1986-08-26
JPS58127383A (ja) 1983-07-29
EP0084393B1 (fr) 1986-04-16
FR2520157A1 (fr) 1983-07-22
EP0084393A2 (fr) 1983-07-27
JPH0261147B2 (enExample) 1990-12-19
EP0084393A3 (en) 1983-08-10

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Legal Events

Date Code Title Description
ST Notification of lapse