CA1172742A - Multiple cell photoresponsive amorphous alloys and devices - Google Patents
Multiple cell photoresponsive amorphous alloys and devicesInfo
- Publication number
- CA1172742A CA1172742A CA000385346A CA385346A CA1172742A CA 1172742 A CA1172742 A CA 1172742A CA 000385346 A CA000385346 A CA 000385346A CA 385346 A CA385346 A CA 385346A CA 1172742 A CA1172742 A CA 1172742A
- Authority
- CA
- Canada
- Prior art keywords
- cell
- alloy
- layer
- band gap
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000956 alloy Substances 0.000 title claims abstract description 130
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 126
- 239000001257 hydrogen Substances 0.000 claims abstract description 64
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 64
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 60
- 238000000151 deposition Methods 0.000 claims abstract description 50
- 239000011737 fluorine Substances 0.000 claims abstract description 47
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 38
- 239000010703 silicon Substances 0.000 claims abstract description 38
- 230000008021 deposition Effects 0.000 claims abstract description 34
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 24
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 23
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 5
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims description 39
- 239000002019 doping agent Substances 0.000 claims description 24
- 230000004888 barrier function Effects 0.000 claims description 15
- 230000005855 radiation Effects 0.000 claims description 14
- 230000001965 increasing effect Effects 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052729 chemical element Inorganic materials 0.000 claims description 3
- 239000002800 charge carrier Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 60
- 238000007740 vapor deposition Methods 0.000 abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 6
- 230000007423 decrease Effects 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- 238000000354 decomposition reaction Methods 0.000 abstract description 2
- 230000010748 Photoabsorption Effects 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 230000004043 responsiveness Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 100
- 239000000758 substrate Substances 0.000 description 46
- 229940060037 fluorine Drugs 0.000 description 43
- 235000019000 fluorine Nutrition 0.000 description 43
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 36
- 229910021417 amorphous silicon Inorganic materials 0.000 description 27
- 239000007789 gas Substances 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 19
- 150000002221 fluorine Chemical class 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 16
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 14
- 229910000077 silane Inorganic materials 0.000 description 13
- 239000003795 chemical substances by application Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 12
- 239000000543 intermediate Substances 0.000 description 10
- 150000002431 hydrogen Chemical class 0.000 description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 230000031700 light absorption Effects 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 239000002178 crystalline material Substances 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 238000005070 sampling Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000002939 deleterious effect Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910000078 germane Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229920000136 polysorbate Polymers 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 208000036366 Sensation of pressure Diseases 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- 230000009102 absorption Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229960005419 nitrogen Drugs 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229940071182 stannate Drugs 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001188 F alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000878 H alloy Inorganic materials 0.000 description 1
- 206010023204 Joint dislocation Diseases 0.000 description 1
- -1 SiF4 Chemical compound 0.000 description 1
- 229910008310 Si—Ge Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229940000425 combination drug Drugs 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 208000035475 disorder Diseases 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000003450 growing effect Effects 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1604—Amorphous materials
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- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Ceramic Engineering (AREA)
- Sustainable Energy (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Element Separation (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US185,520 | 1980-09-09 | ||
US06/185,520 US4342044A (en) | 1978-03-08 | 1980-09-09 | Method for optimizing photoresponsive amorphous alloys and devices |
US20658080A | 1980-11-13 | 1980-11-13 | |
US206,580 | 1980-11-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1172742A true CA1172742A (en) | 1984-08-14 |
Family
ID=26881212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA000385346A Expired CA1172742A (en) | 1980-09-09 | 1981-09-08 | Multiple cell photoresponsive amorphous alloys and devices |
Country Status (14)
Country | Link |
---|---|
KR (1) | KR890004497B1 (nl) |
AU (1) | AU547646B2 (nl) |
BR (1) | BR8105748A (nl) |
CA (1) | CA1172742A (nl) |
DE (1) | DE3135353A1 (nl) |
ES (1) | ES8302365A1 (nl) |
FR (1) | FR2490013B1 (nl) |
GB (1) | GB2083705B (nl) |
IE (1) | IE52209B1 (nl) |
IL (1) | IL63756A0 (nl) |
IN (1) | IN157288B (nl) |
IT (1) | IT1138583B (nl) |
NL (1) | NL8104138A (nl) |
SE (1) | SE451353B (nl) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58139478A (ja) * | 1982-02-15 | 1983-08-18 | Agency Of Ind Science & Technol | アモルフアス太陽電池 |
DE3308269A1 (de) * | 1983-03-09 | 1984-09-13 | Licentia Patent-Verwaltungs-Gmbh | Solarzelle |
AU2549384A (en) * | 1983-03-11 | 1984-09-13 | Exxon Research And Engineering Company | Multi-layered amorphous semiconductor material |
US4598164A (en) * | 1983-10-06 | 1986-07-01 | Exxon Research And Engineering Co. | Solar cell made from amorphous superlattice material |
JPS6177375A (ja) * | 1984-09-21 | 1986-04-19 | Sharp Corp | カラ−センサ |
US4638111A (en) * | 1985-06-04 | 1987-01-20 | Atlantic Richfield Company | Thin film solar cell module |
US4713493A (en) * | 1985-10-11 | 1987-12-15 | Energy Conversion Devices, Inc. | Power generating optical filter |
JPS62136885A (ja) * | 1985-12-11 | 1987-06-19 | Canon Inc | 光起電力素子、その製造方法及びその製造装置 |
JPS62136871A (ja) * | 1985-12-11 | 1987-06-19 | Canon Inc | 光センサ−、その製造方法及びその製造装置 |
JPH0651906B2 (ja) * | 1985-12-25 | 1994-07-06 | キヤノン株式会社 | 堆積膜形成法 |
JPH0647730B2 (ja) * | 1985-12-25 | 1994-06-22 | キヤノン株式会社 | 堆積膜形成法 |
JPH0746729B2 (ja) * | 1985-12-26 | 1995-05-17 | キヤノン株式会社 | 薄膜トランジスタの製造方法 |
JPH0651908B2 (ja) * | 1985-12-28 | 1994-07-06 | キヤノン株式会社 | 薄膜多層構造の形成方法 |
JP2566914B2 (ja) * | 1985-12-28 | 1996-12-25 | キヤノン株式会社 | 薄膜半導体素子及びその形成法 |
EP0248953A1 (en) * | 1986-06-10 | 1987-12-16 | The Standard Oil Company | Tandem photovoltaic devices |
DD292519A5 (de) * | 1990-03-13 | 1991-08-01 | Veb Feinmesszeugfabrik Suhl,De | Transparentes fotoelektrisches element |
NL1000264C2 (nl) * | 1995-05-01 | 1996-11-04 | Frans Willem Saris | Zonnecel met meerlaagsstructuur van dunne films silicium. |
GB0519599D0 (en) * | 2005-09-26 | 2005-11-02 | Imp College Innovations Ltd | Photovoltaic cells |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
US4342044A (en) * | 1978-03-08 | 1982-07-27 | Energy Conversion Devices, Inc. | Method for optimizing photoresponsive amorphous alloys and devices |
JPS5513938A (en) | 1978-07-17 | 1980-01-31 | Shunpei Yamazaki | Photoelectronic conversion semiconductor device and its manufacturing method |
IE52208B1 (en) * | 1980-09-09 | 1987-08-05 | Energy Conversion Devices Inc | Method for increasing the band gap in photoresponsive amorphous alloys and devices |
-
1981
- 1981-09-07 FR FR8116958A patent/FR2490013B1/fr not_active Expired
- 1981-09-07 IN IN1005/CAL/81A patent/IN157288B/en unknown
- 1981-09-07 IL IL63756A patent/IL63756A0/xx not_active IP Right Cessation
- 1981-09-07 IT IT23829/81A patent/IT1138583B/it active
- 1981-09-07 NL NL8104138A patent/NL8104138A/nl not_active Application Discontinuation
- 1981-09-07 SE SE8105279A patent/SE451353B/sv not_active IP Right Cessation
- 1981-09-07 KR KR1019810003330A patent/KR890004497B1/ko active
- 1981-09-07 DE DE19813135353 patent/DE3135353A1/de not_active Ceased
- 1981-09-07 GB GB8126968A patent/GB2083705B/en not_active Expired
- 1981-09-07 ES ES505270A patent/ES8302365A1/es not_active Expired
- 1981-09-07 IE IE2065/81A patent/IE52209B1/en not_active IP Right Cessation
- 1981-09-08 BR BR8105748A patent/BR8105748A/pt unknown
- 1981-09-08 CA CA000385346A patent/CA1172742A/en not_active Expired
- 1981-09-08 AU AU75018/81A patent/AU547646B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
AU7501881A (en) | 1982-03-18 |
KR830008402A (ko) | 1983-11-18 |
NL8104138A (nl) | 1982-04-01 |
AU547646B2 (en) | 1985-10-31 |
FR2490013B1 (fr) | 1985-11-08 |
FR2490013A1 (fr) | 1982-03-12 |
DE3135353A1 (de) | 1982-07-08 |
GB2083705A (en) | 1982-03-24 |
IL63756A0 (en) | 1981-12-31 |
ES505270A0 (es) | 1982-12-16 |
KR890004497B1 (ko) | 1989-11-06 |
IT1138583B (it) | 1986-09-17 |
IE812065L (en) | 1982-03-09 |
IE52209B1 (en) | 1987-08-05 |
ES8302365A1 (es) | 1982-12-16 |
SE8105279L (sv) | 1982-03-10 |
IN157288B (nl) | 1986-02-22 |
BR8105748A (pt) | 1982-05-25 |
SE451353B (sv) | 1987-09-28 |
IT8123829A0 (it) | 1981-09-07 |
GB2083705B (en) | 1985-07-03 |
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