CA1158366A - Semiconductor device of the high frequency field effect transistor type and charge coupled device using such a semiconductor - Google Patents

Semiconductor device of the high frequency field effect transistor type and charge coupled device using such a semiconductor

Info

Publication number
CA1158366A
CA1158366A CA000363129A CA363129A CA1158366A CA 1158366 A CA1158366 A CA 1158366A CA 000363129 A CA000363129 A CA 000363129A CA 363129 A CA363129 A CA 363129A CA 1158366 A CA1158366 A CA 1158366A
Authority
CA
Canada
Prior art keywords
layer
gate
field effect
source
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000363129A
Other languages
English (en)
French (fr)
Inventor
Trong L. Nuyen
Daniel Delagebeaudeuf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of CA1158366A publication Critical patent/CA1158366A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/602—Heterojunction gate electrodes for FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
CA000363129A 1979-10-26 1980-10-23 Semiconductor device of the high frequency field effect transistor type and charge coupled device using such a semiconductor Expired CA1158366A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7926611A FR2469002A1 (fr) 1979-10-26 1979-10-26 Dispositif semiconducteur a effet de champ pour hautes frequences et transistor et dispositif a transfert de charges utilisant un tel semiconducteur
FR7926611 1979-10-26

Publications (1)

Publication Number Publication Date
CA1158366A true CA1158366A (en) 1983-12-06

Family

ID=9231080

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000363129A Expired CA1158366A (en) 1979-10-26 1980-10-23 Semiconductor device of the high frequency field effect transistor type and charge coupled device using such a semiconductor

Country Status (5)

Country Link
EP (1) EP0027761B1 (enrdf_load_stackoverflow)
JP (1) JPS5685871A (enrdf_load_stackoverflow)
CA (1) CA1158366A (enrdf_load_stackoverflow)
DE (1) DE3067774D1 (enrdf_load_stackoverflow)
FR (1) FR2469002A1 (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5953714B2 (ja) * 1979-12-28 1984-12-26 富士通株式会社 半導体装置
FR2489045A1 (fr) * 1980-08-20 1982-02-26 Thomson Csf Transistor a effet de champ gaas a memoire non volatile
FR2497603A1 (fr) * 1981-01-06 1982-07-09 Thomson Csf Transistor a faible temps de commutation, de type normalement bloquant
FR2520157B1 (fr) * 1982-01-18 1985-09-13 Labo Electronique Physique Dispositif semi-conducteur du genre transistor a heterojonction(s)
GB2172742B (en) * 1985-03-21 1988-08-24 Stc Plc Photoconductor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075652A (en) * 1974-04-17 1978-02-21 Matsushita Electronics Corporation Junction gate type gaas field-effect transistor and method of forming
US4065781A (en) * 1974-06-21 1977-12-27 Westinghouse Electric Corporation Insulated-gate thin film transistor with low leakage current
US4160261A (en) * 1978-01-13 1979-07-03 Bell Telephone Laboratories, Incorporated Mis heterojunction structures
FR2465317A2 (fr) * 1979-03-28 1981-03-20 Thomson Csf Transistor a effet de champ a frequence de coupure elevee

Also Published As

Publication number Publication date
FR2469002B1 (enrdf_load_stackoverflow) 1984-02-17
EP0027761B1 (fr) 1984-05-09
JPS5685871A (en) 1981-07-13
FR2469002A1 (fr) 1981-05-08
EP0027761A1 (fr) 1981-04-29
DE3067774D1 (en) 1984-06-14
JPH028453B2 (enrdf_load_stackoverflow) 1990-02-23

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