CA1141479A - Thyristor with continuous emitter shunt - Google Patents

Thyristor with continuous emitter shunt

Info

Publication number
CA1141479A
CA1141479A CA000359146A CA359146A CA1141479A CA 1141479 A CA1141479 A CA 1141479A CA 000359146 A CA000359146 A CA 000359146A CA 359146 A CA359146 A CA 359146A CA 1141479 A CA1141479 A CA 1141479A
Authority
CA
Canada
Prior art keywords
layer
semiconductor material
junction
metallurgical
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000359146A
Other languages
English (en)
French (fr)
Inventor
Maurice H. Hanes
Earl S. Schlegel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of CA1141479A publication Critical patent/CA1141479A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H10P34/40—

Landscapes

  • Thyristors (AREA)
CA000359146A 1979-08-31 1980-08-27 Thyristor with continuous emitter shunt Expired CA1141479A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US071,631 1979-08-31
US06/071,631 US4291329A (en) 1979-08-31 1979-08-31 Thyristor with continuous recombination center shunt across planar emitter-base junction

Publications (1)

Publication Number Publication Date
CA1141479A true CA1141479A (en) 1983-02-15

Family

ID=22102555

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000359146A Expired CA1141479A (en) 1979-08-31 1980-08-27 Thyristor with continuous emitter shunt

Country Status (8)

Country Link
US (1) US4291329A (index.php)
EP (1) EP0024657B1 (index.php)
JP (1) JPS5636161A (index.php)
BR (1) BR8005483A (index.php)
CA (1) CA1141479A (index.php)
DE (1) DE3071679D1 (index.php)
IE (1) IE51962B1 (index.php)
IN (1) IN152784B (index.php)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50140640A (index.php) * 1974-04-29 1975-11-11
US4311534A (en) * 1980-06-27 1982-01-19 Westinghouse Electric Corp. Reducing the reverse recovery charge of thyristors by nuclear irradiation
US4620211A (en) * 1984-08-13 1986-10-28 General Electric Company Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices
WO1986002202A1 (en) * 1984-09-28 1986-04-10 Motorola, Inc. Charge storage depletion region discharge protection
USH569H (en) 1984-09-28 1989-01-03 Motorola Inc. Charge storage depletion region discharge protection
GB2213988B (en) * 1987-12-18 1992-02-05 Matsushita Electric Works Ltd Semiconductor device
JPH07107935B2 (ja) * 1988-02-04 1995-11-15 株式会社東芝 半導体装置
US5072308A (en) * 1989-06-21 1991-12-10 International Mobile Machines Corporation Communication signal compression system and method
US4974099A (en) * 1989-06-21 1990-11-27 International Mobile Machines Corporation Communication signal compression system and method
US5097308A (en) * 1990-03-13 1992-03-17 General Instrument Corp. Method for controlling the switching speed of bipolar power devices
US5049966A (en) * 1990-11-15 1991-09-17 Micron Technology, Inc. Lateral transistor beta reduction by incorporation of electrically active material
JP3311210B2 (ja) * 1995-07-28 2002-08-05 株式会社東芝 半導体装置およびその製造方法
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding
DE10316222B3 (de) * 2003-04-09 2005-01-20 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Verfahren zur Herstellung eines robusten Halbleiterbauelements und damit hergestelltes Halbleiterbauelement
JP2005340528A (ja) * 2004-05-27 2005-12-08 Fuji Electric Device Technology Co Ltd 半導体装置およびその製造方法
US8791547B2 (en) * 2008-01-21 2014-07-29 Infineon Technologies Ag Avalanche diode having an enhanced defect concentration level and method of making the same
JP6402773B2 (ja) * 2014-09-08 2018-10-10 富士電機株式会社 半導体装置及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3309585A (en) * 1963-11-29 1967-03-14 Westinghouse Electric Corp Junction transistor structure with interdigitated configuration having features to minimize localized heating
US3442722A (en) * 1964-12-16 1969-05-06 Siemens Ag Method of making a pnpn thyristor
US3625781A (en) * 1969-05-09 1971-12-07 Ibm Method of reducing carrier lifetime in semiconductor structures
US3810791A (en) * 1970-08-03 1974-05-14 Texas Instruments Inc Process for the fabrication of semiconductor materials
DE2210200A1 (de) * 1972-03-03 1973-09-06 Licentia Gmbh Halbleiterbauelement mit eindiffundierten rekombinationszentren und verfahren zu dessen herstellung
US3888701A (en) * 1973-03-09 1975-06-10 Westinghouse Electric Corp Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing
US3933527A (en) * 1973-03-09 1976-01-20 Westinghouse Electric Corporation Fine tuning power diodes with irradiation
US4053925A (en) * 1975-08-07 1977-10-11 Ibm Corporation Method and structure for controllng carrier lifetime in semiconductor devices
US4056408A (en) * 1976-03-17 1977-11-01 Westinghouse Electric Corporation Reducing the switching time of semiconductor devices by nuclear irradiation

Also Published As

Publication number Publication date
IE801816L (en) 1981-02-28
US4291329A (en) 1981-09-22
EP0024657A2 (en) 1981-03-11
EP0024657B1 (en) 1986-07-30
BR8005483A (pt) 1981-03-10
EP0024657A3 (en) 1983-05-04
JPS5636161A (en) 1981-04-09
DE3071679D1 (en) 1986-09-04
IE51962B1 (en) 1987-05-13
IN152784B (index.php) 1984-04-07

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Legal Events

Date Code Title Description
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