DE3071679D1 - Thyristor with continuous emitter shunt - Google Patents

Thyristor with continuous emitter shunt

Info

Publication number
DE3071679D1
DE3071679D1 DE8080104849T DE3071679T DE3071679D1 DE 3071679 D1 DE3071679 D1 DE 3071679D1 DE 8080104849 T DE8080104849 T DE 8080104849T DE 3071679 T DE3071679 T DE 3071679T DE 3071679 D1 DE3071679 D1 DE 3071679D1
Authority
DE
Germany
Prior art keywords
thyristor
continuous emitter
emitter shunt
shunt
continuous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080104849T
Other languages
English (en)
Inventor
Maurice Henry Hanes
Earl Stauffer Schlegel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of DE3071679D1 publication Critical patent/DE3071679D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
DE8080104849T 1979-08-31 1980-08-14 Thyristor with continuous emitter shunt Expired DE3071679D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/071,631 US4291329A (en) 1979-08-31 1979-08-31 Thyristor with continuous recombination center shunt across planar emitter-base junction

Publications (1)

Publication Number Publication Date
DE3071679D1 true DE3071679D1 (en) 1986-09-04

Family

ID=22102555

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080104849T Expired DE3071679D1 (en) 1979-08-31 1980-08-14 Thyristor with continuous emitter shunt

Country Status (8)

Country Link
US (1) US4291329A (de)
EP (1) EP0024657B1 (de)
JP (1) JPS5636161A (de)
BR (1) BR8005483A (de)
CA (1) CA1141479A (de)
DE (1) DE3071679D1 (de)
IE (1) IE51962B1 (de)
IN (1) IN152784B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50140640A (de) * 1974-04-29 1975-11-11
US4311534A (en) * 1980-06-27 1982-01-19 Westinghouse Electric Corp. Reducing the reverse recovery charge of thyristors by nuclear irradiation
US4620211A (en) * 1984-08-13 1986-10-28 General Electric Company Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices
USH569H (en) 1984-09-28 1989-01-03 Motorola Inc. Charge storage depletion region discharge protection
EP0197948A4 (de) * 1984-09-28 1988-01-07 Motorola Inc Schutz gegen die entladung einer verarmungszone eines ladungsspeichers.
GB2213988B (en) * 1987-12-18 1992-02-05 Matsushita Electric Works Ltd Semiconductor device
JPH07107935B2 (ja) * 1988-02-04 1995-11-15 株式会社東芝 半導体装置
US4974099A (en) * 1989-06-21 1990-11-27 International Mobile Machines Corporation Communication signal compression system and method
US5072308A (en) * 1989-06-21 1991-12-10 International Mobile Machines Corporation Communication signal compression system and method
US5097308A (en) * 1990-03-13 1992-03-17 General Instrument Corp. Method for controlling the switching speed of bipolar power devices
US5049966A (en) * 1990-11-15 1991-09-17 Micron Technology, Inc. Lateral transistor beta reduction by incorporation of electrically active material
JP3311210B2 (ja) * 1995-07-28 2002-08-05 株式会社東芝 半導体装置およびその製造方法
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding
DE10316222B3 (de) * 2003-04-09 2005-01-20 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Verfahren zur Herstellung eines robusten Halbleiterbauelements und damit hergestelltes Halbleiterbauelement
JP2005340528A (ja) * 2004-05-27 2005-12-08 Fuji Electric Device Technology Co Ltd 半導体装置およびその製造方法
US8791547B2 (en) 2008-01-21 2014-07-29 Infineon Technologies Ag Avalanche diode having an enhanced defect concentration level and method of making the same
WO2016039071A1 (ja) * 2014-09-08 2016-03-17 富士電機株式会社 半導体装置及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3309585A (en) * 1963-11-29 1967-03-14 Westinghouse Electric Corp Junction transistor structure with interdigitated configuration having features to minimize localized heating
US3442722A (en) * 1964-12-16 1969-05-06 Siemens Ag Method of making a pnpn thyristor
US3625781A (en) * 1969-05-09 1971-12-07 Ibm Method of reducing carrier lifetime in semiconductor structures
US3810791A (en) * 1970-08-03 1974-05-14 Texas Instruments Inc Process for the fabrication of semiconductor materials
DE2210200A1 (de) * 1972-03-03 1973-09-06 Licentia Gmbh Halbleiterbauelement mit eindiffundierten rekombinationszentren und verfahren zu dessen herstellung
US3888701A (en) * 1973-03-09 1975-06-10 Westinghouse Electric Corp Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing
US3933527A (en) * 1973-03-09 1976-01-20 Westinghouse Electric Corporation Fine tuning power diodes with irradiation
US4053925A (en) * 1975-08-07 1977-10-11 Ibm Corporation Method and structure for controllng carrier lifetime in semiconductor devices
US4056408A (en) * 1976-03-17 1977-11-01 Westinghouse Electric Corporation Reducing the switching time of semiconductor devices by nuclear irradiation

Also Published As

Publication number Publication date
JPS5636161A (en) 1981-04-09
EP0024657A2 (de) 1981-03-11
EP0024657B1 (de) 1986-07-30
CA1141479A (en) 1983-02-15
IE51962B1 (en) 1987-05-13
US4291329A (en) 1981-09-22
IE801816L (en) 1981-02-28
BR8005483A (pt) 1981-03-10
IN152784B (de) 1984-04-07
EP0024657A3 (en) 1983-05-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee