IN152784B - - Google Patents
Info
- Publication number
- IN152784B IN152784B IN1240/CAL/80A IN1240CA1980A IN152784B IN 152784 B IN152784 B IN 152784B IN 1240CA1980 A IN1240CA1980 A IN 1240CA1980A IN 152784 B IN152784 B IN 152784B
- Authority
- IN
- India
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/50—Physical imperfections
- H10D62/53—Physical imperfections the imperfections being within the semiconductor body
-
- H10P34/40—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/071,631 US4291329A (en) | 1979-08-31 | 1979-08-31 | Thyristor with continuous recombination center shunt across planar emitter-base junction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN152784B true IN152784B (index.php) | 1984-04-07 |
Family
ID=22102555
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN1240/CAL/80A IN152784B (index.php) | 1979-08-31 | 1980-11-01 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4291329A (index.php) |
| EP (1) | EP0024657B1 (index.php) |
| JP (1) | JPS5636161A (index.php) |
| BR (1) | BR8005483A (index.php) |
| CA (1) | CA1141479A (index.php) |
| DE (1) | DE3071679D1 (index.php) |
| IE (1) | IE51962B1 (index.php) |
| IN (1) | IN152784B (index.php) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50140640A (index.php) * | 1974-04-29 | 1975-11-11 | ||
| US4311534A (en) * | 1980-06-27 | 1982-01-19 | Westinghouse Electric Corp. | Reducing the reverse recovery charge of thyristors by nuclear irradiation |
| US4620211A (en) * | 1984-08-13 | 1986-10-28 | General Electric Company | Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices |
| WO1986002202A1 (en) * | 1984-09-28 | 1986-04-10 | Motorola, Inc. | Charge storage depletion region discharge protection |
| USH569H (en) | 1984-09-28 | 1989-01-03 | Motorola Inc. | Charge storage depletion region discharge protection |
| GB2213988B (en) * | 1987-12-18 | 1992-02-05 | Matsushita Electric Works Ltd | Semiconductor device |
| JPH07107935B2 (ja) * | 1988-02-04 | 1995-11-15 | 株式会社東芝 | 半導体装置 |
| US5072308A (en) * | 1989-06-21 | 1991-12-10 | International Mobile Machines Corporation | Communication signal compression system and method |
| US4974099A (en) * | 1989-06-21 | 1990-11-27 | International Mobile Machines Corporation | Communication signal compression system and method |
| US5097308A (en) * | 1990-03-13 | 1992-03-17 | General Instrument Corp. | Method for controlling the switching speed of bipolar power devices |
| US5049966A (en) * | 1990-11-15 | 1991-09-17 | Micron Technology, Inc. | Lateral transistor beta reduction by incorporation of electrically active material |
| JP3311210B2 (ja) * | 1995-07-28 | 2002-08-05 | 株式会社東芝 | 半導体装置およびその製造方法 |
| US6274892B1 (en) * | 1998-03-09 | 2001-08-14 | Intersil Americas Inc. | Devices formable by low temperature direct bonding |
| DE10316222B3 (de) * | 2003-04-09 | 2005-01-20 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Verfahren zur Herstellung eines robusten Halbleiterbauelements und damit hergestelltes Halbleiterbauelement |
| JP2005340528A (ja) * | 2004-05-27 | 2005-12-08 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
| US8791547B2 (en) * | 2008-01-21 | 2014-07-29 | Infineon Technologies Ag | Avalanche diode having an enhanced defect concentration level and method of making the same |
| JP6402773B2 (ja) * | 2014-09-08 | 2018-10-10 | 富士電機株式会社 | 半導体装置及びその製造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3309585A (en) * | 1963-11-29 | 1967-03-14 | Westinghouse Electric Corp | Junction transistor structure with interdigitated configuration having features to minimize localized heating |
| US3442722A (en) * | 1964-12-16 | 1969-05-06 | Siemens Ag | Method of making a pnpn thyristor |
| US3625781A (en) * | 1969-05-09 | 1971-12-07 | Ibm | Method of reducing carrier lifetime in semiconductor structures |
| US3810791A (en) * | 1970-08-03 | 1974-05-14 | Texas Instruments Inc | Process for the fabrication of semiconductor materials |
| DE2210200A1 (de) * | 1972-03-03 | 1973-09-06 | Licentia Gmbh | Halbleiterbauelement mit eindiffundierten rekombinationszentren und verfahren zu dessen herstellung |
| US3888701A (en) * | 1973-03-09 | 1975-06-10 | Westinghouse Electric Corp | Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing |
| US3933527A (en) * | 1973-03-09 | 1976-01-20 | Westinghouse Electric Corporation | Fine tuning power diodes with irradiation |
| US4053925A (en) * | 1975-08-07 | 1977-10-11 | Ibm Corporation | Method and structure for controllng carrier lifetime in semiconductor devices |
| US4056408A (en) * | 1976-03-17 | 1977-11-01 | Westinghouse Electric Corporation | Reducing the switching time of semiconductor devices by nuclear irradiation |
-
1979
- 1979-08-31 US US06/071,631 patent/US4291329A/en not_active Expired - Lifetime
-
1980
- 1980-08-14 DE DE8080104849T patent/DE3071679D1/de not_active Expired
- 1980-08-14 EP EP80104849A patent/EP0024657B1/en not_active Expired
- 1980-08-27 CA CA000359146A patent/CA1141479A/en not_active Expired
- 1980-08-29 IE IE1816/80A patent/IE51962B1/en unknown
- 1980-08-29 JP JP11855580A patent/JPS5636161A/ja active Pending
- 1980-08-29 BR BR8005483A patent/BR8005483A/pt unknown
- 1980-11-01 IN IN1240/CAL/80A patent/IN152784B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| IE801816L (en) | 1981-02-28 |
| US4291329A (en) | 1981-09-22 |
| EP0024657A2 (en) | 1981-03-11 |
| EP0024657B1 (en) | 1986-07-30 |
| BR8005483A (pt) | 1981-03-10 |
| CA1141479A (en) | 1983-02-15 |
| EP0024657A3 (en) | 1983-05-04 |
| JPS5636161A (en) | 1981-04-09 |
| DE3071679D1 (en) | 1986-09-04 |
| IE51962B1 (en) | 1987-05-13 |