IE51962B1 - Thyristor with continuous emitter shunt - Google Patents

Thyristor with continuous emitter shunt

Info

Publication number
IE51962B1
IE51962B1 IE1816/80A IE181680A IE51962B1 IE 51962 B1 IE51962 B1 IE 51962B1 IE 1816/80 A IE1816/80 A IE 1816/80A IE 181680 A IE181680 A IE 181680A IE 51962 B1 IE51962 B1 IE 51962B1
Authority
IE
Ireland
Prior art keywords
layer
junction
semiconductor material
thyristor
semiconductor
Prior art date
Application number
IE1816/80A
Other languages
English (en)
Other versions
IE801816L (en
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of IE801816L publication Critical patent/IE801816L/xx
Publication of IE51962B1 publication Critical patent/IE51962B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H10P34/40—

Landscapes

  • Thyristors (AREA)
IE1816/80A 1979-08-31 1980-08-29 Thyristor with continuous emitter shunt IE51962B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/071,631 US4291329A (en) 1979-08-31 1979-08-31 Thyristor with continuous recombination center shunt across planar emitter-base junction

Publications (2)

Publication Number Publication Date
IE801816L IE801816L (en) 1981-02-28
IE51962B1 true IE51962B1 (en) 1987-05-13

Family

ID=22102555

Family Applications (1)

Application Number Title Priority Date Filing Date
IE1816/80A IE51962B1 (en) 1979-08-31 1980-08-29 Thyristor with continuous emitter shunt

Country Status (8)

Country Link
US (1) US4291329A (index.php)
EP (1) EP0024657B1 (index.php)
JP (1) JPS5636161A (index.php)
BR (1) BR8005483A (index.php)
CA (1) CA1141479A (index.php)
DE (1) DE3071679D1 (index.php)
IE (1) IE51962B1 (index.php)
IN (1) IN152784B (index.php)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50140640A (index.php) * 1974-04-29 1975-11-11
US4311534A (en) * 1980-06-27 1982-01-19 Westinghouse Electric Corp. Reducing the reverse recovery charge of thyristors by nuclear irradiation
US4620211A (en) * 1984-08-13 1986-10-28 General Electric Company Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices
WO1986002202A1 (en) * 1984-09-28 1986-04-10 Motorola, Inc. Charge storage depletion region discharge protection
USH569H (en) 1984-09-28 1989-01-03 Motorola Inc. Charge storage depletion region discharge protection
GB2213988B (en) * 1987-12-18 1992-02-05 Matsushita Electric Works Ltd Semiconductor device
JPH07107935B2 (ja) * 1988-02-04 1995-11-15 株式会社東芝 半導体装置
US5072308A (en) * 1989-06-21 1991-12-10 International Mobile Machines Corporation Communication signal compression system and method
US4974099A (en) * 1989-06-21 1990-11-27 International Mobile Machines Corporation Communication signal compression system and method
US5097308A (en) * 1990-03-13 1992-03-17 General Instrument Corp. Method for controlling the switching speed of bipolar power devices
US5049966A (en) * 1990-11-15 1991-09-17 Micron Technology, Inc. Lateral transistor beta reduction by incorporation of electrically active material
JP3311210B2 (ja) * 1995-07-28 2002-08-05 株式会社東芝 半導体装置およびその製造方法
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding
DE10316222B3 (de) * 2003-04-09 2005-01-20 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Verfahren zur Herstellung eines robusten Halbleiterbauelements und damit hergestelltes Halbleiterbauelement
JP2005340528A (ja) * 2004-05-27 2005-12-08 Fuji Electric Device Technology Co Ltd 半導体装置およびその製造方法
US8791547B2 (en) * 2008-01-21 2014-07-29 Infineon Technologies Ag Avalanche diode having an enhanced defect concentration level and method of making the same
JP6402773B2 (ja) * 2014-09-08 2018-10-10 富士電機株式会社 半導体装置及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3309585A (en) * 1963-11-29 1967-03-14 Westinghouse Electric Corp Junction transistor structure with interdigitated configuration having features to minimize localized heating
US3442722A (en) * 1964-12-16 1969-05-06 Siemens Ag Method of making a pnpn thyristor
US3625781A (en) * 1969-05-09 1971-12-07 Ibm Method of reducing carrier lifetime in semiconductor structures
US3810791A (en) * 1970-08-03 1974-05-14 Texas Instruments Inc Process for the fabrication of semiconductor materials
DE2210200A1 (de) * 1972-03-03 1973-09-06 Licentia Gmbh Halbleiterbauelement mit eindiffundierten rekombinationszentren und verfahren zu dessen herstellung
US3888701A (en) * 1973-03-09 1975-06-10 Westinghouse Electric Corp Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing
US3933527A (en) * 1973-03-09 1976-01-20 Westinghouse Electric Corporation Fine tuning power diodes with irradiation
US4053925A (en) * 1975-08-07 1977-10-11 Ibm Corporation Method and structure for controllng carrier lifetime in semiconductor devices
US4056408A (en) * 1976-03-17 1977-11-01 Westinghouse Electric Corporation Reducing the switching time of semiconductor devices by nuclear irradiation

Also Published As

Publication number Publication date
IE801816L (en) 1981-02-28
US4291329A (en) 1981-09-22
EP0024657A2 (en) 1981-03-11
EP0024657B1 (en) 1986-07-30
BR8005483A (pt) 1981-03-10
CA1141479A (en) 1983-02-15
EP0024657A3 (en) 1983-05-04
JPS5636161A (en) 1981-04-09
DE3071679D1 (en) 1986-09-04
IN152784B (index.php) 1984-04-07

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