CA1107379A - Color responsive imaging device employing wavelength dependent semiconductor optical absorption - Google Patents

Color responsive imaging device employing wavelength dependent semiconductor optical absorption

Info

Publication number
CA1107379A
CA1107379A CA298,693A CA298693A CA1107379A CA 1107379 A CA1107379 A CA 1107379A CA 298693 A CA298693 A CA 298693A CA 1107379 A CA1107379 A CA 1107379A
Authority
CA
Canada
Prior art keywords
layers
layer
less
thickness
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA298,693A
Other languages
English (en)
French (fr)
Inventor
Bruce C. Burkey
Edward L. Wolf
Roger S. Vanheyningen
Richard A. Spaulding
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of CA1107379A publication Critical patent/CA1107379A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1062Channel region of field-effect devices of charge coupled devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14806Structural or functional details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14868CCD or CID colour imagers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/80Camera processing pipelines; Components thereof
    • H04N23/84Camera processing pipelines; Components thereof for processing colour signals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14831Area CCD imagers
    • H01L27/14843Interline transfer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CA298,693A 1977-03-24 1978-03-10 Color responsive imaging device employing wavelength dependent semiconductor optical absorption Expired CA1107379A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US78094477A 1977-03-24 1977-03-24
US780,944 1985-09-27

Publications (1)

Publication Number Publication Date
CA1107379A true CA1107379A (en) 1981-08-18

Family

ID=25121164

Family Applications (1)

Application Number Title Priority Date Filing Date
CA298,693A Expired CA1107379A (en) 1977-03-24 1978-03-10 Color responsive imaging device employing wavelength dependent semiconductor optical absorption

Country Status (7)

Country Link
JP (1) JPS53118932A (fi)
CA (1) CA1107379A (fi)
DE (1) DE2811961C3 (fi)
FR (1) FR2385219A1 (fi)
GB (1) GB1597740A (fi)
HK (1) HK5682A (fi)
NL (1) NL7803196A (fi)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4214264A (en) * 1979-02-28 1980-07-22 Eastman Kodak Company Hybrid color image sensing array
DE3124716A1 (de) * 1981-06-24 1983-05-19 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt "anordnung zur mehrspektralen abbildung von objekten, vorzugsweise von zielen"
JPS5916483A (ja) * 1982-07-19 1984-01-27 Matsushita Electric Ind Co Ltd 固体撮像装置
US4533940A (en) * 1983-06-13 1985-08-06 Chappell Barbara A High spatial resolution energy discriminator
JPH0644842B2 (ja) * 1987-06-02 1994-06-15 日本甜菜製糖株式会社 移植機の苗補給方法及び装置
JP2502747Y2 (ja) * 1989-08-31 1996-06-26 ヤンマー農機株式会社 歩行型移植機
US9610392B2 (en) 2012-06-08 2017-04-04 Fresenius Medical Care Holdings, Inc. Medical fluid cassettes and related systems and methods

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3906544A (en) * 1971-07-14 1975-09-16 Gen Electric Semiconductor imaging detector device
US3860956A (en) * 1972-03-17 1975-01-14 Matsushita Electric Ind Co Ltd Color target and method of manufacturing same
DE2247966A1 (de) * 1972-09-29 1974-04-11 Heinz Prof Dr Rer Nat Beneking Halbleiteranordnung zum nachweis von lichtstrahlen
US3985449A (en) * 1975-02-07 1976-10-12 International Business Machines Corporation Semiconductor color detector

Also Published As

Publication number Publication date
JPS6154314B2 (fi) 1986-11-21
DE2811961A1 (de) 1978-09-28
JPS53118932A (en) 1978-10-17
DE2811961B2 (de) 1979-12-20
NL7803196A (nl) 1978-09-26
FR2385219B1 (fi) 1981-10-30
FR2385219A1 (fr) 1978-10-20
HK5682A (en) 1982-02-19
DE2811961C3 (de) 1987-01-22
GB1597740A (en) 1981-09-09

Similar Documents

Publication Publication Date Title
US4613895A (en) Color responsive imaging device employing wavelength dependent semiconductor optical absorption
US4214264A (en) Hybrid color image sensing array
EP0173542B1 (en) A solid-state image sensor
US6027955A (en) Method of making an active pixel sensor integrated with a pinned photodiode
CN100456483C (zh) 固态摄像器件及其制作方法
US5859462A (en) Photogenerated carrier collection of a solid state image sensor array
JPS5819080A (ja) 固体撮像素子
US5122850A (en) Blooming control and reduced image lag in interline transfer CCD area image sensors
US5754228A (en) Rapid-sequence full-frame CCD sensor
CA1107379A (en) Color responsive imaging device employing wavelength dependent semiconductor optical absorption
JPH09266296A (ja) 固体撮像装置
US5349215A (en) Antiblooming structure for solid-state image sensor
US5614950A (en) CCD image sensor and method of preventing a smear phenomenon in the sensor
JPH11121729A (ja) バンドギャップ設計型アクティブ・ピクセル・セル
KR0186183B1 (ko) 컬러 고체촬상소자
JPH0666344B2 (ja) 電荷結合素子
US6002145A (en) Solid-state imaging device
JP5030323B2 (ja) 固体撮像素子
KR20050084270A (ko) 고체 촬상소자 및 고체 촬상소자의 제조방법
Kosonocky et al. Schottky-barrier image sensor with 100% fill factor
US5066994A (en) Image sensor
US5063581A (en) Semiconductor imaging device having a plurality of photodiodes and charge coupled devices
JPH01168059A (ja) 固体撮像素子
JP4216935B2 (ja) 半導体装置の製造方法
JP2003060191A (ja) 固体撮像素子及びその製造方法

Legal Events

Date Code Title Description
MKEX Expiry