CA1101548A - Two phase charge coupled devices employing fixed charge for creating asymmetrical potential wells - Google Patents

Two phase charge coupled devices employing fixed charge for creating asymmetrical potential wells

Info

Publication number
CA1101548A
CA1101548A CA149,504A CA149504A CA1101548A CA 1101548 A CA1101548 A CA 1101548A CA 149504 A CA149504 A CA 149504A CA 1101548 A CA1101548 A CA 1101548A
Authority
CA
Canada
Prior art keywords
charge
substrate
electrode
beneath
insulating means
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA149,504A
Other languages
English (en)
French (fr)
Other versions
CA149504S (en
Inventor
Walter F. Kosonocky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA1101548A publication Critical patent/CA1101548A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/474—Two-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
CA149,504A 1971-08-19 1972-08-15 Two phase charge coupled devices employing fixed charge for creating asymmetrical potential wells Expired CA1101548A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17315271A 1971-08-19 1971-08-19
US173,152 1971-08-19

Publications (1)

Publication Number Publication Date
CA1101548A true CA1101548A (en) 1981-05-19

Family

ID=22630755

Family Applications (1)

Application Number Title Priority Date Filing Date
CA149,504A Expired CA1101548A (en) 1971-08-19 1972-08-15 Two phase charge coupled devices employing fixed charge for creating asymmetrical potential wells

Country Status (5)

Country Link
JP (1) JPS5123865B2 (en:Method)
CA (1) CA1101548A (en:Method)
DE (1) DE2240249C3 (en:Method)
FR (1) FR2149568B1 (en:Method)
GB (1) GB1395558A (en:Method)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4875176A (en:Method) * 1972-01-12 1973-10-09
DE2351393C3 (de) * 1973-10-12 1978-06-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Ladungsverschiebeanordnung in Zwei-Phasen-Technik und Verfahren zu ihrer Herstellung
JPS5815271A (ja) * 1981-07-21 1983-01-28 Nec Corp 電荷結合素子

Also Published As

Publication number Publication date
GB1395558A (en) 1975-05-29
DE2240249C3 (de) 1975-05-07
DE2240249A1 (de) 1973-02-22
JPS5123865B2 (en:Method) 1976-07-20
DE2240249B2 (en:Method) 1974-05-22
FR2149568B1 (en:Method) 1976-10-29
FR2149568A1 (en:Method) 1973-03-30
JPS4830879A (en:Method) 1973-04-23

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Legal Events

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