CA1097408A - Inverter in an integrated injection logic structure - Google Patents
Inverter in an integrated injection logic structureInfo
- Publication number
- CA1097408A CA1097408A CA256,414A CA256414A CA1097408A CA 1097408 A CA1097408 A CA 1097408A CA 256414 A CA256414 A CA 256414A CA 1097408 A CA1097408 A CA 1097408A
- Authority
- CA
- Canada
- Prior art keywords
- transistor
- base
- emitter
- doped
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002347 injection Methods 0.000 title claims description 8
- 239000007924 injection Substances 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000002955 isolation Methods 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims abstract 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000005468 ion implantation Methods 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 7
- 238000003860 storage Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/091—Integrated injection logic or merged transistor logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/63—Combinations of vertical and lateral BJTs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEP2530292.5 | 1975-07-07 | ||
| DE19752530292 DE2530292A1 (de) | 1975-07-07 | 1975-07-07 | Inverter in einer i hoch 2 l- struktur |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1097408A true CA1097408A (en) | 1981-03-10 |
Family
ID=5950888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA256,414A Expired CA1097408A (en) | 1975-07-07 | 1976-07-06 | Inverter in an integrated injection logic structure |
Country Status (6)
| Country | Link |
|---|---|
| CA (1) | CA1097408A (OSRAM) |
| CH (1) | CH609172A5 (OSRAM) |
| DE (1) | DE2530292A1 (OSRAM) |
| FR (1) | FR2317818A1 (OSRAM) |
| GB (1) | GB1551133A (OSRAM) |
| IT (1) | IT1067525B (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4542331A (en) * | 1983-08-01 | 1985-09-17 | Signetics Corporation | Low-impedance voltage reference |
| US4871686A (en) * | 1988-03-28 | 1989-10-03 | Motorola, Inc. | Integrated Schottky diode and transistor |
-
1975
- 1975-07-07 DE DE19752530292 patent/DE2530292A1/de not_active Withdrawn
-
1976
- 1976-06-01 CH CH683376A patent/CH609172A5/xx not_active IP Right Cessation
- 1976-06-23 FR FR7619141A patent/FR2317818A1/fr active Granted
- 1976-07-02 IT IT24960/76A patent/IT1067525B/it active
- 1976-07-06 CA CA256,414A patent/CA1097408A/en not_active Expired
- 1976-07-06 GB GB28003/76A patent/GB1551133A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2530292A1 (de) | 1977-01-20 |
| FR2317818A1 (fr) | 1977-02-04 |
| FR2317818B1 (OSRAM) | 1981-09-25 |
| GB1551133A (en) | 1979-08-22 |
| CH609172A5 (en) | 1979-02-15 |
| IT1067525B (it) | 1985-03-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |