Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
  • H10D84/65—Integrated injection logic
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
  • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
  • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
  • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
  • H03K19/091—Integrated injection logic or merged transistor logic
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
  • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
  • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
  • H10D84/617—Combinations of vertical BJTs and only diodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
  • H10D84/63—Combinations of vertical and lateral BJTs

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Computing Systems (AREA)
• General Engineering & Computer Science (AREA)
• Mathematical Physics (AREA)
• Bipolar Integrated Circuits (AREA)
• Bipolar Transistors (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=5950888

Family Applications (1)

Country Status (6)

Families Citing this family (2)

• 1975
  • 1975-07-07 DE DE19752530292 patent/DE2530292A1/de not_active Withdrawn
• 1976
  • 1976-06-01 CH CH683376A patent/CH609172A5/xx not_active IP Right Cessation
  • 1976-06-23 FR FR7619141A patent/FR2317818A1/fr active Granted
  • 1976-07-02 IT IT24960/76A patent/IT1067525B/it active
  • 1976-07-06 CA CA256,414A patent/CA1097408A/en not_active Expired
  • 1976-07-06 GB GB28003/76A patent/GB1551133A/en not_active Expired

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