FR2317818B1 - - Google Patents
Info
- Publication number
- FR2317818B1 FR2317818B1 FR7619141A FR7619141A FR2317818B1 FR 2317818 B1 FR2317818 B1 FR 2317818B1 FR 7619141 A FR7619141 A FR 7619141A FR 7619141 A FR7619141 A FR 7619141A FR 2317818 B1 FR2317818 B1 FR 2317818B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/091—Integrated injection logic or merged transistor logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/63—Combinations of vertical and lateral BJTs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19752530292 DE2530292A1 (de) | 1975-07-07 | 1975-07-07 | Inverter in einer i hoch 2 l- struktur |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2317818A1 FR2317818A1 (fr) | 1977-02-04 |
| FR2317818B1 true FR2317818B1 (OSRAM) | 1981-09-25 |
Family
ID=5950888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7619141A Granted FR2317818A1 (fr) | 1975-07-07 | 1976-06-23 | Etage inverseur de structure logique integree a injection |
Country Status (6)
| Country | Link |
|---|---|
| CA (1) | CA1097408A (OSRAM) |
| CH (1) | CH609172A5 (OSRAM) |
| DE (1) | DE2530292A1 (OSRAM) |
| FR (1) | FR2317818A1 (OSRAM) |
| GB (1) | GB1551133A (OSRAM) |
| IT (1) | IT1067525B (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4542331A (en) * | 1983-08-01 | 1985-09-17 | Signetics Corporation | Low-impedance voltage reference |
| US4871686A (en) * | 1988-03-28 | 1989-10-03 | Motorola, Inc. | Integrated Schottky diode and transistor |
-
1975
- 1975-07-07 DE DE19752530292 patent/DE2530292A1/de not_active Withdrawn
-
1976
- 1976-06-01 CH CH683376A patent/CH609172A5/xx not_active IP Right Cessation
- 1976-06-23 FR FR7619141A patent/FR2317818A1/fr active Granted
- 1976-07-02 IT IT24960/76A patent/IT1067525B/it active
- 1976-07-06 CA CA256,414A patent/CA1097408A/en not_active Expired
- 1976-07-06 GB GB28003/76A patent/GB1551133A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2530292A1 (de) | 1977-01-20 |
| FR2317818A1 (fr) | 1977-02-04 |
| CA1097408A (en) | 1981-03-10 |
| GB1551133A (en) | 1979-08-22 |
| CH609172A5 (en) | 1979-02-15 |
| IT1067525B (it) | 1985-03-16 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |