FR2317818A1 - Etage inverseur de structure logique integree a injection - Google Patents

Etage inverseur de structure logique integree a injection

Info

Publication number
FR2317818A1
FR2317818A1 FR7619141A FR7619141A FR2317818A1 FR 2317818 A1 FR2317818 A1 FR 2317818A1 FR 7619141 A FR7619141 A FR 7619141A FR 7619141 A FR7619141 A FR 7619141A FR 2317818 A1 FR2317818 A1 FR 2317818A1
Authority
FR
France
Prior art keywords
injection
integrated logic
inverter stage
logic structure
inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7619141A
Other languages
English (en)
French (fr)
Other versions
FR2317818B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2317818A1 publication Critical patent/FR2317818A1/fr
Application granted granted Critical
Publication of FR2317818B1 publication Critical patent/FR2317818B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
FR7619141A 1975-07-07 1976-06-23 Etage inverseur de structure logique integree a injection Granted FR2317818A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752530292 DE2530292A1 (de) 1975-07-07 1975-07-07 Inverter in einer i hoch 2 l- struktur

Publications (2)

Publication Number Publication Date
FR2317818A1 true FR2317818A1 (fr) 1977-02-04
FR2317818B1 FR2317818B1 (OSRAM) 1981-09-25

Family

ID=5950888

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7619141A Granted FR2317818A1 (fr) 1975-07-07 1976-06-23 Etage inverseur de structure logique integree a injection

Country Status (6)

Country Link
CA (1) CA1097408A (OSRAM)
CH (1) CH609172A5 (OSRAM)
DE (1) DE2530292A1 (OSRAM)
FR (1) FR2317818A1 (OSRAM)
GB (1) GB1551133A (OSRAM)
IT (1) IT1067525B (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0147898A3 (en) * 1983-12-23 1986-11-05 N.V. Philips' Gloeilampenfabrieken Low-impedance voltage limiting circuit
EP0335217A3 (en) * 1988-03-28 1992-04-15 Motorola, Inc. Integrated schottky diode and transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0147898A3 (en) * 1983-12-23 1986-11-05 N.V. Philips' Gloeilampenfabrieken Low-impedance voltage limiting circuit
EP0335217A3 (en) * 1988-03-28 1992-04-15 Motorola, Inc. Integrated schottky diode and transistor

Also Published As

Publication number Publication date
DE2530292A1 (de) 1977-01-20
CA1097408A (en) 1981-03-10
FR2317818B1 (OSRAM) 1981-09-25
GB1551133A (en) 1979-08-22
CH609172A5 (en) 1979-02-15
IT1067525B (it) 1985-03-16

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Legal Events

Date Code Title Description
ST Notification of lapse