FR2317818A1 - INVERTER STAGE OF INTEGRATED LOGIC STRUCTURE WITH INJECTION - Google Patents

INVERTER STAGE OF INTEGRATED LOGIC STRUCTURE WITH INJECTION

Info

Publication number
FR2317818A1
FR2317818A1 FR7619141A FR7619141A FR2317818A1 FR 2317818 A1 FR2317818 A1 FR 2317818A1 FR 7619141 A FR7619141 A FR 7619141A FR 7619141 A FR7619141 A FR 7619141A FR 2317818 A1 FR2317818 A1 FR 2317818A1
Authority
FR
France
Prior art keywords
injection
integrated logic
inverter stage
logic structure
inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7619141A
Other languages
French (fr)
Other versions
FR2317818B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2317818A1 publication Critical patent/FR2317818A1/en
Application granted granted Critical
Publication of FR2317818B1 publication Critical patent/FR2317818B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
FR7619141A 1975-07-07 1976-06-23 INVERTER STAGE OF INTEGRATED LOGIC STRUCTURE WITH INJECTION Granted FR2317818A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752530292 DE2530292A1 (en) 1975-07-07 1975-07-07 INVERTER IN AN I HIGH 2 L STRUCTURE

Publications (2)

Publication Number Publication Date
FR2317818A1 true FR2317818A1 (en) 1977-02-04
FR2317818B1 FR2317818B1 (en) 1981-09-25

Family

ID=5950888

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7619141A Granted FR2317818A1 (en) 1975-07-07 1976-06-23 INVERTER STAGE OF INTEGRATED LOGIC STRUCTURE WITH INJECTION

Country Status (6)

Country Link
CA (1) CA1097408A (en)
CH (1) CH609172A5 (en)
DE (1) DE2530292A1 (en)
FR (1) FR2317818A1 (en)
GB (1) GB1551133A (en)
IT (1) IT1067525B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0147898A2 (en) * 1983-12-23 1985-07-10 Koninklijke Philips Electronics N.V. Low-impedance voltage limiting circuit
EP0335217A2 (en) * 1988-03-28 1989-10-04 Motorola, Inc. Integrated Schottky diode and transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0147898A2 (en) * 1983-12-23 1985-07-10 Koninklijke Philips Electronics N.V. Low-impedance voltage limiting circuit
EP0147898A3 (en) * 1983-12-23 1986-11-05 N.V. Philips' Gloeilampenfabrieken Low-impedance voltage limiting circuit
EP0335217A2 (en) * 1988-03-28 1989-10-04 Motorola, Inc. Integrated Schottky diode and transistor
EP0335217A3 (en) * 1988-03-28 1992-04-15 Motorola, Inc. Integrated schottky diode and transistor

Also Published As

Publication number Publication date
IT1067525B (en) 1985-03-16
GB1551133A (en) 1979-08-22
CH609172A5 (en) 1979-02-15
FR2317818B1 (en) 1981-09-25
DE2530292A1 (en) 1977-01-20
CA1097408A (en) 1981-03-10

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Legal Events

Date Code Title Description
ST Notification of lapse