CA1095620A - Two-device memory cell - Google Patents
Two-device memory cellInfo
- Publication number
- CA1095620A CA1095620A CA278,853A CA278853A CA1095620A CA 1095620 A CA1095620 A CA 1095620A CA 278853 A CA278853 A CA 278853A CA 1095620 A CA1095620 A CA 1095620A
- Authority
- CA
- Canada
- Prior art keywords
- bit
- memory array
- storage device
- pair
- sense
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US697,188 | 1976-06-17 | ||
| US05/697,188 US4103342A (en) | 1976-06-17 | 1976-06-17 | Two-device memory cell with single floating capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1095620A true CA1095620A (en) | 1981-02-10 |
Family
ID=24800170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA278,853A Expired CA1095620A (en) | 1976-06-17 | 1977-05-20 | Two-device memory cell |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4103342A (Direct) |
| JP (1) | JPS52154314A (Direct) |
| CA (1) | CA1095620A (Direct) |
| DE (1) | DE2725613C2 (Direct) |
| FR (1) | FR2355358A1 (Direct) |
| GB (1) | GB1523094A (Direct) |
| IT (1) | IT1115344B (Direct) |
| NL (1) | NL7704931A (Direct) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2740113A1 (de) * | 1977-09-06 | 1979-03-15 | Siemens Ag | Monolithisch integrierter halbleiterspeicher |
| US4160275A (en) * | 1978-04-03 | 1979-07-03 | International Business Machines Corporation | Accessing arrangement for memories with small cells |
| JPS5634179A (en) * | 1979-08-24 | 1981-04-06 | Mitsubishi Electric Corp | Control circuit for memory unit |
| US4413330A (en) * | 1981-06-30 | 1983-11-01 | International Business Machines Corporation | Apparatus for the reduction of the short-channel effect in a single-polysilicon, one-device FET dynamic RAM array |
| GB2144937B (en) * | 1981-08-05 | 1986-02-19 | Gen Instrument Corp | A storage cell suitable for use in a storage cell logic array |
| JPS6116099A (ja) * | 1984-06-29 | 1986-01-24 | Sharp Corp | ダイナミック型半導体記憶装置 |
| FR2595160A1 (fr) * | 1986-02-28 | 1987-09-04 | Eurotechnique Sa | Cellule memoire couplee et memoire dynamique comportant une telle cellule |
| US4888733A (en) * | 1988-09-12 | 1989-12-19 | Ramtron Corporation | Non-volatile memory cell and sensing method |
| JPH02168492A (ja) * | 1988-12-21 | 1990-06-28 | Nec Corp | ダイナミックｒａｍのメモリセル |
| US5293563A (en) * | 1988-12-29 | 1994-03-08 | Sharp Kabushiki Kaisha | Multi-level memory cell with increased read-out margin |
| US5219779A (en) * | 1989-05-11 | 1993-06-15 | Sharp Kabushiki Kaisha | Memory cell for dynamic random access memory |
| JP2719237B2 (ja) * | 1990-12-20 | 1998-02-25 | シャープ株式会社 | ダイナミック型半導体記憶装置 |
| US5363327A (en) * | 1993-01-19 | 1994-11-08 | International Business Machines Corporation | Buried-sidewall-strap two transistor one capacitor trench cell |
| KR0146075B1 (ko) * | 1995-05-25 | 1998-11-02 | 문정환 | 반도체 메모리 셀 |
| WO2003052829A1 (fr) * | 2001-12-14 | 2003-06-26 | Hitachi, Ltd. | Dispositif semi-conducteur et procede de fabrication correspondant |
| US6888187B2 (en) | 2002-08-26 | 2005-05-03 | International Business Machines Corporation | DRAM cell with enhanced SER immunity |
| US7164595B1 (en) * | 2005-08-25 | 2007-01-16 | Micron Technology, Inc. | Device and method for using dynamic cell plate sensing in a DRAM memory cell |
| CN109690680B (zh) | 2016-08-31 | 2023-07-21 | 美光科技公司 | 包含二晶体管一电容器的存储器及用于存取所述存储器的设备与方法 |
| EP3507806B1 (en) | 2016-08-31 | 2022-01-19 | Micron Technology, Inc. | Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory |
| WO2018044454A1 (en) | 2016-08-31 | 2018-03-08 | Micron Technology, Inc. | Memory cells and memory arrays |
| SG11201901168UA (en) | 2016-08-31 | 2019-03-28 | Micron Technology Inc | Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory |
| US10355002B2 (en) * | 2016-08-31 | 2019-07-16 | Micron Technology, Inc. | Memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry |
| CN109219883B (zh) | 2016-08-31 | 2023-03-21 | 美光科技公司 | 存储器胞元和存储器阵列 |
| US10056386B2 (en) | 2016-08-31 | 2018-08-21 | Micron Technology, Inc. | Memory cells and memory arrays |
| CN109155312B (zh) | 2016-08-31 | 2023-05-02 | 美光科技公司 | 存储器单元及存储器阵列 |
| WO2018044458A1 (en) | 2016-08-31 | 2018-03-08 | Micron Technology, Inc. | Memory arrays |
| JP6980006B2 (ja) | 2016-08-31 | 2021-12-15 | マイクロン テクノロジー，インク． | 強誘電体メモリセル |
| CN109196584B (zh) | 2016-08-31 | 2022-07-19 | 美光科技公司 | 感测放大器构造 |
| CN110192280A (zh) | 2017-01-12 | 2019-08-30 | 美光科技公司 | 存储器单元、双晶体管单电容器存储器单元阵列、形成双晶体管单电容器存储器单元阵列的方法及用于制造集成电路的方法 |
| US10867675B2 (en) | 2017-07-13 | 2020-12-15 | Micron Technology, Inc. | Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells |
| US10083973B1 (en) * | 2017-08-09 | 2018-09-25 | Micron Technology, Inc. | Apparatuses and methods for reading memory cells |
| EP3676835A4 (en) | 2017-08-29 | 2020-08-19 | Micron Technology, Inc. | MEMORY CIRCUITS |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4420093Y1 (Direct) * | 1966-04-27 | 1969-08-28 | ||
| US3463992A (en) * | 1966-06-13 | 1969-08-26 | Gen Electric | Electrical capacitor systems having long-term storage characteristics |
| US3585185A (en) * | 1968-05-13 | 1971-06-15 | Wyandotte Chemicals Corp | Ester-containing polyols |
| DE2431079C3 (de) * | 1974-06-28 | 1979-12-13 | Ibm Deutschland Gmbh, 7000 Stuttgart | Dynamischer Halbleiterspeicher mit Zwei-Transistor-Speicherelementen |
| US3938109A (en) * | 1975-02-19 | 1976-02-10 | Intel Corporation | High speed ECL compatible MOS-Ram |
-
1976
- 1976-06-17 US US05/697,188 patent/US4103342A/en not_active Expired - Lifetime
-
1977
- 1977-04-25 GB GB17190/77A patent/GB1523094A/en not_active Expired
- 1977-05-03 FR FR7714010A patent/FR2355358A1/fr active Granted
- 1977-05-05 NL NL7704931A patent/NL7704931A/xx not_active Application Discontinuation
- 1977-05-18 JP JP5649277A patent/JPS52154314A/ja active Granted
- 1977-05-20 CA CA278,853A patent/CA1095620A/en not_active Expired
- 1977-06-07 DE DE2725613A patent/DE2725613C2/de not_active Expired
- 1977-06-07 IT IT24425/77A patent/IT1115344B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| DE2725613A1 (de) | 1977-12-29 |
| FR2355358B1 (Direct) | 1979-03-09 |
| JPS5733632B2 (Direct) | 1982-07-17 |
| FR2355358A1 (fr) | 1978-01-13 |
| GB1523094A (en) | 1978-08-31 |
| US4103342A (en) | 1978-07-25 |
| JPS52154314A (en) | 1977-12-22 |
| NL7704931A (nl) | 1977-12-20 |
| IT1115344B (it) | 1986-02-03 |
| DE2725613C2 (de) | 1984-05-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |