CA1080589A - Method for producing single crystal gadolinium gallium - Google Patents
Method for producing single crystal gadolinium galliumInfo
- Publication number
- CA1080589A CA1080589A CA280,811A CA280811A CA1080589A CA 1080589 A CA1080589 A CA 1080589A CA 280811 A CA280811 A CA 280811A CA 1080589 A CA1080589 A CA 1080589A
- Authority
- CA
- Canada
- Prior art keywords
- melt
- calcium
- ppm
- metal ion
- unicrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 title abstract description 9
- 239000013078 crystal Substances 0.000 title description 14
- 229910052688 Gadolinium Inorganic materials 0.000 title description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title description 7
- 229910052733 gallium Inorganic materials 0.000 title description 7
- 239000000155 melt Substances 0.000 claims abstract description 48
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000011575 calcium Substances 0.000 claims abstract description 15
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 claims abstract description 14
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000011777 magnesium Substances 0.000 claims abstract description 13
- 229910001424 calcium ion Inorganic materials 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 21
- 229910021645 metal ion Inorganic materials 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 16
- 229910052791 calcium Inorganic materials 0.000 claims description 13
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052749 magnesium Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 229910052712 strontium Inorganic materials 0.000 claims description 10
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 10
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 claims description 9
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000012298 atmosphere Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 2
- 229910001425 magnesium ion Inorganic materials 0.000 abstract description 2
- 229910001427 strontium ion Inorganic materials 0.000 abstract description 2
- 229910001938 gadolinium oxide Inorganic materials 0.000 abstract 1
- 229910001195 gallium oxide Inorganic materials 0.000 abstract 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 20
- 229910052741 iridium Inorganic materials 0.000 description 14
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 14
- 238000007792 addition Methods 0.000 description 12
- 230000006698 induction Effects 0.000 description 12
- 239000008187 granular material Substances 0.000 description 9
- 239000002223 garnet Substances 0.000 description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 229910000019 calcium carbonate Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- CBQYNPHHHJTCJS-UHFFFAOYSA-N Alline Chemical compound C1=CC=C2C3(O)CCN(C)C3NC2=C1 CBQYNPHHHJTCJS-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000010216 calcium carbonate Nutrition 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- PWYYWQHXAPXYMF-UHFFFAOYSA-N strontium(2+) Chemical compound [Sr+2] PWYYWQHXAPXYMF-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US69946076A | 1976-06-24 | 1976-06-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1080589A true CA1080589A (en) | 1980-07-01 |
Family
ID=24809427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA280,811A Expired CA1080589A (en) | 1976-06-24 | 1977-06-17 | Method for producing single crystal gadolinium gallium |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS535100A (enrdf_load_stackoverflow) |
| CA (1) | CA1080589A (enrdf_load_stackoverflow) |
| CH (1) | CH603236A5 (enrdf_load_stackoverflow) |
| DE (1) | DE2728314C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2355560A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1565407A (enrdf_load_stackoverflow) |
| NL (1) | NL187587C (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2047113B (en) * | 1979-04-12 | 1983-08-03 | Union Carbide Corp | Method for producing gadolinium gallium garnet |
| US4443411A (en) * | 1980-12-15 | 1984-04-17 | Mobil Solar Energy Corporation | Apparatus for controlling the atmosphere surrounding a crystal growth zone |
| CN104313693B (zh) * | 2014-09-19 | 2017-01-18 | 北京雷生强式科技有限责任公司 | 掺杂钇铝石榴石激光晶体的生长装置、晶体生长炉及制备方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2434251C2 (de) * | 1974-07-17 | 1982-08-26 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Einkristall auf der Basis von Gallium- Granat |
-
1977
- 1977-06-17 CA CA280,811A patent/CA1080589A/en not_active Expired
- 1977-06-23 GB GB26303/77A patent/GB1565407A/en not_active Expired
- 1977-06-23 JP JP7392277A patent/JPS535100A/ja active Granted
- 1977-06-23 DE DE2728314A patent/DE2728314C3/de not_active Expired
- 1977-06-23 FR FR7719290A patent/FR2355560A1/fr active Granted
- 1977-06-23 NL NLAANVRAGE7706980,A patent/NL187587C/xx not_active IP Right Cessation
- 1977-06-23 CH CH773077A patent/CH603236A5/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5648480B2 (enrdf_load_stackoverflow) | 1981-11-16 |
| DE2728314B2 (de) | 1981-05-07 |
| FR2355560B1 (enrdf_load_stackoverflow) | 1983-01-21 |
| CH603236A5 (enrdf_load_stackoverflow) | 1978-08-15 |
| FR2355560A1 (fr) | 1978-01-20 |
| NL7706980A (nl) | 1977-12-28 |
| JPS535100A (en) | 1978-01-18 |
| NL187587C (nl) | 1991-11-18 |
| DE2728314A1 (de) | 1978-02-02 |
| GB1565407A (en) | 1980-04-23 |
| NL187587B (nl) | 1991-06-17 |
| DE2728314C3 (de) | 1982-03-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |