JPS535100A - Method of making single crystal gadlinium gallium - Google Patents

Method of making single crystal gadlinium gallium

Info

Publication number
JPS535100A
JPS535100A JP7392277A JP7392277A JPS535100A JP S535100 A JPS535100 A JP S535100A JP 7392277 A JP7392277 A JP 7392277A JP 7392277 A JP7392277 A JP 7392277A JP S535100 A JPS535100 A JP S535100A
Authority
JP
Japan
Prior art keywords
gadlinium
gallium
single crystal
making single
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7392277A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5648480B2 (enrdf_load_stackoverflow
Inventor
Deibitsudo Burandor Chiyaaruzu
Benson Haseru Jiyunia Jiyon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Union Carbide Corp
Original Assignee
Union Carbide Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Carbide Corp filed Critical Union Carbide Corp
Publication of JPS535100A publication Critical patent/JPS535100A/ja
Publication of JPS5648480B2 publication Critical patent/JPS5648480B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP7392277A 1976-06-24 1977-06-23 Method of making single crystal gadlinium gallium Granted JPS535100A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69946076A 1976-06-24 1976-06-24

Publications (2)

Publication Number Publication Date
JPS535100A true JPS535100A (en) 1978-01-18
JPS5648480B2 JPS5648480B2 (enrdf_load_stackoverflow) 1981-11-16

Family

ID=24809427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7392277A Granted JPS535100A (en) 1976-06-24 1977-06-23 Method of making single crystal gadlinium gallium

Country Status (7)

Country Link
JP (1) JPS535100A (enrdf_load_stackoverflow)
CA (1) CA1080589A (enrdf_load_stackoverflow)
CH (1) CH603236A5 (enrdf_load_stackoverflow)
DE (1) DE2728314C3 (enrdf_load_stackoverflow)
FR (1) FR2355560A1 (enrdf_load_stackoverflow)
GB (1) GB1565407A (enrdf_load_stackoverflow)
NL (1) NL187587C (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2047113B (en) * 1979-04-12 1983-08-03 Union Carbide Corp Method for producing gadolinium gallium garnet
US4443411A (en) * 1980-12-15 1984-04-17 Mobil Solar Energy Corporation Apparatus for controlling the atmosphere surrounding a crystal growth zone
CN104313693B (zh) * 2014-09-19 2017-01-18 北京雷生强式科技有限责任公司 掺杂钇铝石榴石激光晶体的生长装置、晶体生长炉及制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2434251C2 (de) * 1974-07-17 1982-08-26 Philips Patentverwaltung Gmbh, 2000 Hamburg Einkristall auf der Basis von Gallium- Granat

Also Published As

Publication number Publication date
JPS5648480B2 (enrdf_load_stackoverflow) 1981-11-16
DE2728314B2 (de) 1981-05-07
FR2355560B1 (enrdf_load_stackoverflow) 1983-01-21
CH603236A5 (enrdf_load_stackoverflow) 1978-08-15
CA1080589A (en) 1980-07-01
FR2355560A1 (fr) 1978-01-20
NL7706980A (nl) 1977-12-28
NL187587C (nl) 1991-11-18
DE2728314A1 (de) 1978-02-02
GB1565407A (en) 1980-04-23
NL187587B (nl) 1991-06-17
DE2728314C3 (de) 1982-03-25

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