CA1070427A - N-channel storage field effect transistors - Google Patents
N-channel storage field effect transistorsInfo
- Publication number
- CA1070427A CA1070427A CA235,230A CA235230A CA1070427A CA 1070427 A CA1070427 A CA 1070427A CA 235230 A CA235230 A CA 235230A CA 1070427 A CA1070427 A CA 1070427A
- Authority
- CA
- Canada
- Prior art keywords
- storage
- gate
- channel
- fet
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003860 storage Methods 0.000 title claims abstract description 656
- 230000005669 field effect Effects 0.000 title description 2
- 230000000694 effects Effects 0.000 claims abstract description 142
- 239000012212 insulator Substances 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 238000002347 injection Methods 0.000 claims abstract description 55
- 239000007924 injection Substances 0.000 claims abstract description 55
- 238000007667 floating Methods 0.000 claims abstract description 47
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- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
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- QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 description 5
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- BIIBYWQGRFWQKM-JVVROLKMSA-N (2S)-N-[4-(cyclopropylamino)-3,4-dioxo-1-[(3S)-2-oxopyrrolidin-3-yl]butan-2-yl]-2-[[(E)-3-(2,4-dichlorophenyl)prop-2-enoyl]amino]-4,4-dimethylpentanamide Chemical compound CC(C)(C)C[C@@H](C(NC(C[C@H](CCN1)C1=O)C(C(NC1CC1)=O)=O)=O)NC(/C=C/C(C=CC(Cl)=C1)=C1Cl)=O BIIBYWQGRFWQKM-JVVROLKMSA-N 0.000 description 1
- 241001663154 Electron Species 0.000 description 1
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- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- VOVZXURTCKPRDQ-CQSZACIVSA-N n-[4-[chloro(difluoro)methoxy]phenyl]-6-[(3r)-3-hydroxypyrrolidin-1-yl]-5-(1h-pyrazol-5-yl)pyridine-3-carboxamide Chemical compound C1[C@H](O)CCN1C1=NC=C(C(=O)NC=2C=CC(OC(F)(F)Cl)=CC=2)C=C1C1=CC=NN1 VOVZXURTCKPRDQ-CQSZACIVSA-N 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2445137A DE2445137C3 (de) | 1974-09-20 | 1974-09-20 | Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix |
| DE19752505816 DE2505816C3 (de) | 1974-09-20 | 1975-02-12 | Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix |
| DE2513207A DE2513207C2 (de) | 1974-09-20 | 1975-03-25 | n-Kanal-Speicher-FET |
| DE19752525062 DE2525062C2 (de) | 1975-06-05 | 1975-06-05 | Matrixanordnung aus n-Kanal-Speicher-FET |
| DE19752525097 DE2525097C3 (de) | 1975-06-05 | 1975-06-05 | Verfahren zum Betrieb eines n-Kanal-Speicher-FET |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1070427A true CA1070427A (en) | 1980-01-22 |
Family
ID=27510366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA235,230A Expired CA1070427A (en) | 1974-09-20 | 1975-09-11 | N-channel storage field effect transistors |
Country Status (11)
| Country | Link |
|---|---|
| JP (1) | JPS5157255A (da) |
| AT (1) | AT365000B (da) |
| AU (1) | AU498494B2 (da) |
| BE (1) | BE833633A (da) |
| CA (1) | CA1070427A (da) |
| CH (1) | CH607233A5 (da) |
| DK (1) | DK143923C (da) |
| FR (1) | FR2285677A1 (da) |
| GB (1) | GB1517927A (da) |
| IT (1) | IT1042632B (da) |
| NL (1) | NL175561C (da) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5391585A (en) * | 1977-04-04 | 1978-08-11 | Agency Of Ind Science & Technol | Nonvolatile field effect transistor |
| US4173766A (en) * | 1977-09-16 | 1979-11-06 | Fairchild Camera And Instrument Corporation | Insulated gate field-effect transistor read-only memory cell |
| SE7907193L (sv) * | 1978-09-28 | 1980-03-29 | Rca Corp | Bestendigt minne |
| JPS5560469U (da) * | 1978-10-20 | 1980-04-24 | ||
| JPS5571072A (en) * | 1978-11-24 | 1980-05-28 | Hitachi Ltd | Semiconductor nonvolatile memory |
| JPS57160163A (en) * | 1981-03-27 | 1982-10-02 | Agency Of Ind Science & Technol | Nonvolatile semiconductor memory |
| JPS5864068A (ja) * | 1981-10-14 | 1983-04-16 | Agency Of Ind Science & Technol | 不揮発性半導体メモリの書き込み方法 |
| JPH04307974A (ja) * | 1991-04-05 | 1992-10-30 | Sharp Corp | 電気的消去可能不揮発性半導体記憶装置 |
| CN111739572A (zh) * | 2019-03-25 | 2020-10-02 | 亿而得微电子股份有限公司 | 电子写入可擦除可重写只读存储器的低压快速擦除方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS526148B2 (da) * | 1972-05-18 | 1977-02-19 |
-
1975
- 1975-08-21 AT AT0646575A patent/AT365000B/de not_active IP Right Cessation
- 1975-09-09 GB GB3698375A patent/GB1517927A/en not_active Expired
- 1975-09-11 CA CA235,230A patent/CA1070427A/en not_active Expired
- 1975-09-12 AU AU84797/75A patent/AU498494B2/en not_active Expired
- 1975-09-16 FR FR7528356A patent/FR2285677A1/fr active Granted
- 1975-09-16 CH CH1198075A patent/CH607233A5/xx not_active IP Right Cessation
- 1975-09-18 IT IT2734475A patent/IT1042632B/it active
- 1975-09-18 NL NL7511017A patent/NL175561C/xx not_active IP Right Cessation
- 1975-09-18 DK DK419975A patent/DK143923C/da not_active IP Right Cessation
- 1975-09-19 BE BE160218A patent/BE833633A/xx not_active IP Right Cessation
- 1975-09-19 JP JP11352275A patent/JPS5157255A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| NL175561C (nl) | 1984-11-16 |
| BE833633A (fr) | 1976-03-19 |
| DK419975A (da) | 1976-03-21 |
| DK143923B (da) | 1981-10-26 |
| IT1042632B (it) | 1980-01-30 |
| ATA646575A (de) | 1981-04-15 |
| GB1517927A (en) | 1978-07-19 |
| AU8479775A (en) | 1977-03-17 |
| FR2285677A1 (fr) | 1976-04-16 |
| NL7511017A (nl) | 1976-03-23 |
| CH607233A5 (da) | 1978-11-30 |
| FR2285677B1 (da) | 1981-05-29 |
| NL175561B (nl) | 1984-06-18 |
| AT365000B (de) | 1981-11-25 |
| AU498494B2 (en) | 1979-03-15 |
| JPS5157255A (da) | 1976-05-19 |
| DK143923C (da) | 1982-04-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |