CA1069221A - Anodic etching method for the detection of electrically active defects in silicon - Google Patents
Anodic etching method for the detection of electrically active defects in siliconInfo
- Publication number
- CA1069221A CA1069221A CA272,839A CA272839A CA1069221A CA 1069221 A CA1069221 A CA 1069221A CA 272839 A CA272839 A CA 272839A CA 1069221 A CA1069221 A CA 1069221A
- Authority
- CA
- Canada
- Prior art keywords
- silicon
- wafer
- defects
- electrically active
- method defined
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000007547 defect Effects 0.000 title abstract description 28
- 229910052710 silicon Inorganic materials 0.000 title abstract description 17
- 239000010703 silicon Substances 0.000 title abstract description 17
- 238000005530 etching Methods 0.000 title abstract description 9
- 238000001514 detection method Methods 0.000 title abstract description 3
- 235000012431 wafers Nutrition 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 13
- 239000002210 silicon-based material Substances 0.000 claims 5
- 239000002253 acid Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 19
- 239000004065 semiconductor Substances 0.000 abstract description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 3
- 238000002048 anodisation reaction Methods 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 239000003792 electrolyte Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000002411 adverse Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003487 electrochemical reaction Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 241000905957 Channa melasoma Species 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2637—Circuits therefor for testing other individual devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US66723276A | 1976-03-15 | 1976-03-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1069221A true CA1069221A (en) | 1980-01-01 |
Family
ID=24677379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA272,839A Expired CA1069221A (en) | 1976-03-15 | 1977-02-28 | Anodic etching method for the detection of electrically active defects in silicon |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS52111373A (enExample) |
| CA (1) | CA1069221A (enExample) |
| DE (1) | DE2707372C2 (enExample) |
| FR (1) | FR2344847A1 (enExample) |
| GB (1) | GB1514697A (enExample) |
| IT (1) | IT1118013B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2532760A1 (fr) * | 1982-09-08 | 1984-03-09 | Comp Generale Electricite | Procede et dispositif pour obtenir des caracteristiques physiques d'un materiau semi-conducteur |
| JPS6066920A (ja) * | 1983-09-22 | 1985-04-17 | 北興化工機株式会社 | 可搬式サイレ−ジ容器 |
| DE3917702A1 (de) * | 1989-05-31 | 1990-12-06 | Siemens Ag | Verfahren zur ortsaufgeloesten bestimmung der diffusionslaenge von minoritaetsladungstraegern in einem halbleiterkristallkoerper mit hilfe einer elektrolytischen zelle |
| EP0400387B1 (de) * | 1989-05-31 | 1996-02-21 | Siemens Aktiengesellschaft | Verfahren zum grossflächigen elektrischen Kontaktieren eines Halbleiterkristallkörpers mit Hilfe von Elektrolyten |
| EP0400386B1 (de) * | 1989-05-31 | 1994-08-24 | Siemens Aktiengesellschaft | Verfahren zur Bestimmung der Rekombinationsgeschwindigkeit von Minoritätsträgern an Grenzflächen zwischen Halbleitern und anderen Substanzen |
| DE4328083A1 (de) * | 1993-08-20 | 1994-03-31 | Ignaz Eisele | Verfahren zur mikroskopischen Messung von Topographie und lateralen Potentialverteilungen an einer Oberfläche mit einer Feldeffektanordnung |
| JP4916249B2 (ja) * | 2006-08-10 | 2012-04-11 | 新電元工業株式会社 | 半導体基板の検査方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3655540A (en) * | 1970-06-22 | 1972-04-11 | Bell Telephone Labor Inc | Method of making semiconductor device components |
| US3902979A (en) * | 1974-06-24 | 1975-09-02 | Westinghouse Electric Corp | Insulator substrate with a thin mono-crystalline semiconductive layer and method of fabrication |
-
1977
- 1977-01-18 FR FR7702072A patent/FR2344847A1/fr active Granted
- 1977-02-21 DE DE19772707372 patent/DE2707372C2/de not_active Expired
- 1977-02-24 GB GB782177A patent/GB1514697A/en not_active Expired
- 1977-02-25 JP JP1940477A patent/JPS52111373A/ja active Granted
- 1977-02-25 IT IT2066677A patent/IT1118013B/it active
- 1977-02-28 CA CA272,839A patent/CA1069221A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52111373A (en) | 1977-09-19 |
| DE2707372C2 (de) | 1985-08-22 |
| FR2344847A1 (fr) | 1977-10-14 |
| GB1514697A (en) | 1978-06-21 |
| JPS5320380B2 (enExample) | 1978-06-26 |
| IT1118013B (it) | 1986-02-24 |
| FR2344847B1 (enExample) | 1979-09-28 |
| DE2707372A1 (de) | 1977-09-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |