CA1068806A - Semiconductor photodiodes and method of manufacturing the same - Google Patents

Semiconductor photodiodes and method of manufacturing the same

Info

Publication number
CA1068806A
CA1068806A CA263,362A CA263362A CA1068806A CA 1068806 A CA1068806 A CA 1068806A CA 263362 A CA263362 A CA 263362A CA 1068806 A CA1068806 A CA 1068806A
Authority
CA
Canada
Prior art keywords
layer
region
impurity
junction
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA263,362A
Other languages
English (en)
French (fr)
Inventor
Yoshihiko Mizushima
Kenji Kajiyama
Tatsuya Kimura
Hiroshi Kanbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of CA1068806A publication Critical patent/CA1068806A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Light Receiving Elements (AREA)
CA263,362A 1975-10-27 1976-10-14 Semiconductor photodiodes and method of manufacturing the same Expired CA1068806A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50129630A JPS5252593A (en) 1975-10-27 1975-10-27 Semiconductor light receiving diode

Publications (1)

Publication Number Publication Date
CA1068806A true CA1068806A (en) 1979-12-25

Family

ID=15014232

Family Applications (1)

Application Number Title Priority Date Filing Date
CA263,362A Expired CA1068806A (en) 1975-10-27 1976-10-14 Semiconductor photodiodes and method of manufacturing the same

Country Status (4)

Country Link
US (1) US4142200A (enExample)
JP (1) JPS5252593A (enExample)
CA (1) CA1068806A (enExample)
FR (1) FR2330149A1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4326211A (en) * 1977-09-01 1982-04-20 U.S. Philips Corporation N+PP-PP-P+ Avalanche photodiode
NL7709618A (nl) * 1977-09-01 1979-03-05 Philips Nv Stralingsgevoelige halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
US4219830A (en) * 1978-06-19 1980-08-26 Gibbons James F Semiconductor solar cell
US4441114A (en) * 1981-12-22 1984-04-03 International Business Machines Corporation CMOS Subsurface breakdown zener diode
US4518255A (en) * 1982-08-20 1985-05-21 Mcdonnell Douglas Corporation Temperature tracking range finder
US4616247A (en) * 1983-11-10 1986-10-07 At&T Bell Laboratories P-I-N and avalanche photodiodes
JPS61174051U (enExample) * 1985-04-15 1986-10-29
CA1321660C (en) * 1985-11-05 1993-08-24 Hideo Yamagishi Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer
CA1280196C (en) * 1987-07-17 1991-02-12 Paul Perry Webb Avanlanche photodiode
JP2729130B2 (ja) * 1992-04-16 1998-03-18 三菱電機株式会社 半導体装置の製造パラメタの設定方法及びその装置
JPH07240534A (ja) * 1993-03-16 1995-09-12 Seiko Instr Inc 光電変換半導体装置及びその製造方法
US5446308A (en) * 1994-04-04 1995-08-29 General Electric Company Deep-diffused planar avalanche photodiode
US5438217A (en) * 1994-04-29 1995-08-01 General Electric Company Planar avalanche photodiode array with sidewall segment
US6552414B1 (en) * 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
JPH1126741A (ja) 1997-07-04 1999-01-29 Toshiba Corp 固体撮像装置
US6528827B2 (en) 2000-11-10 2003-03-04 Optolynx, Inc. MSM device and method of manufacturing same
JP5021888B2 (ja) * 2002-02-01 2012-09-12 ピコメトリックス インコーポレイテッド 拡張型光検出器
US7323731B2 (en) * 2003-12-12 2008-01-29 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
RU2290721C2 (ru) * 2004-05-05 2006-12-27 Борис Анатольевич Долгошеин Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя
WO2008129433A2 (en) * 2007-04-24 2008-10-30 Koninklijke Philips Electronics N.V. Photodiodes and fabrication thereof
JP5493430B2 (ja) 2009-03-31 2014-05-14 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
DE102011003454A1 (de) * 2011-02-01 2012-08-02 Siemens Aktiengesellschaft Strahlungsdirektkonverter, Strahlungsdetektor, medizintechnisches Gerät und Verfahren zum Erzeugen eines Strahlungsdirektkonverters
NL2011568A (en) 2012-10-31 2014-05-06 Asml Netherlands Bv Sensor and lithographic apparatus.
DE102013018789B4 (de) 2012-11-29 2025-03-06 Infineon Technologies Ag Steuern lichterzeugter Ladungsträger
JP7169071B2 (ja) * 2018-02-06 2022-11-10 ソニーセミコンダクタソリューションズ株式会社 画素構造、撮像素子、撮像装置、および電子機器
US11508869B2 (en) * 2019-08-06 2022-11-22 Ohio State Innovation Foundation Lateral interband type II engineered (LITE) detector

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1300164B (de) * 1967-01-26 1969-07-31 Itt Ind Gmbh Deutsche Verfahren zum Herstellen von Zenerdioden
FR2108781B1 (enExample) * 1970-10-05 1974-10-31 Radiotechnique Compelec
US3886579A (en) * 1972-07-28 1975-05-27 Hitachi Ltd Avalanche photodiode
FR2252653B1 (enExample) * 1973-11-28 1976-10-01 Thomson Csf
CA1015069A (en) * 1974-04-01 1977-08-02 Chung K. Kim Dynamic negative resistance diode
US3921192A (en) * 1974-05-28 1975-11-18 Gen Electric Avalanche diode
US3990099A (en) * 1974-12-05 1976-11-02 Rca Corporation Planar Trapatt diode
US4060820A (en) * 1976-01-05 1977-11-29 Raytheon Company Low noise read-type diode

Also Published As

Publication number Publication date
JPS5745067B2 (enExample) 1982-09-25
JPS5252593A (en) 1977-04-27
FR2330149A1 (fr) 1977-05-27
FR2330149B1 (enExample) 1979-03-02
US4142200A (en) 1979-02-27

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