CA1023878A - Heterojunction devices - Google Patents

Heterojunction devices

Info

Publication number
CA1023878A
CA1023878A CA218,099A CA218099A CA1023878A CA 1023878 A CA1023878 A CA 1023878A CA 218099 A CA218099 A CA 218099A CA 1023878 A CA1023878 A CA 1023878A
Authority
CA
Canada
Prior art keywords
heterojunction devices
heterojunction
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA218,099A
Other languages
English (en)
French (fr)
Inventor
Mahmoud A. Melehy
Faquir C. Jain
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Connecticut
Original Assignee
University of Connecticut
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Connecticut filed Critical University of Connecticut
Application granted granted Critical
Publication of CA1023878A publication Critical patent/CA1023878A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Recrystallisation Techniques (AREA)
CA218,099A 1974-01-18 1975-01-17 Heterojunction devices Expired CA1023878A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US43470774A 1974-01-18 1974-01-18

Publications (1)

Publication Number Publication Date
CA1023878A true CA1023878A (en) 1978-01-03

Family

ID=23725329

Family Applications (1)

Application Number Title Priority Date Filing Date
CA218,099A Expired CA1023878A (en) 1974-01-18 1975-01-17 Heterojunction devices

Country Status (10)

Country Link
US (1) US4119994A (ru)
JP (1) JPS50119567A (ru)
AU (1) AU7731575A (ru)
BE (1) BE824475A (ru)
CA (1) CA1023878A (ru)
CH (1) CH599681A5 (ru)
DE (1) DE2501785A1 (ru)
FR (1) FR2258710B1 (ru)
GB (1) GB1499561A (ru)
NL (1) NL7500594A (ru)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2379169A1 (fr) * 1977-01-28 1978-08-25 Thomson Csf Diode a avalanche constituee par une hetero-jonction et oscillateur en mode dit " a temps de transit " comportant une telle diode
FR2408221A1 (fr) * 1977-10-04 1979-06-01 Thomson Csf Structure du type metal-germanium - arseniure de gallium et oscillateur utilisant une telle structure
FR2408915A1 (fr) * 1977-11-10 1979-06-08 Thomson Csf Photodiode a heterojonction, fonctionnant en avalanche sous une faible tension de polarisation
US4188710A (en) * 1978-08-11 1980-02-19 The United States Of America As Represented By The Secretary Of The Navy Ohmic contacts for group III-V n-type semiconductors using epitaxial germanium films
JPS56133867A (en) * 1980-03-21 1981-10-20 Semiconductor Res Found Thermoelectric emission transistor
US4316206A (en) * 1980-04-14 1982-02-16 The United States Of America As Represented By The Secretary Of The Navy Two color narrow bandwidth detector
US4395722A (en) * 1980-10-21 1983-07-26 The United States Of America As Represented By The Secretary Of The Army Heterojunction transistor
JPS57147284A (en) * 1981-03-06 1982-09-11 Fujitsu Ltd Semiconductor device
FR2507386A1 (fr) * 1981-06-03 1982-12-10 Labo Electronique Physique Dispositif semi-conducteur, emetteur d'electrons, dont la couche active possede un gradient de dopage
US4672404A (en) * 1982-09-17 1987-06-09 Cornell Research Foundation, Inc. Ballistic heterojunction bipolar transistor
US4728616A (en) * 1982-09-17 1988-03-01 Cornell Research Foundation, Inc. Ballistic heterojunction bipolar transistor
US4794440A (en) * 1983-05-25 1988-12-27 American Telephone And Telegraph Company, At&T Bell Laboratories Heterojunction bipolar transistor
US4649405A (en) * 1984-04-10 1987-03-10 Cornell Research Foundation, Inc. Electron ballistic injection and extraction for very high efficiency, high frequency transferred electron devices
JPS60227341A (ja) * 1984-04-25 1985-11-12 Toshiba Corp 撮像管の光導電タ−ゲツト
EP0194265B1 (de) * 1984-07-10 1990-02-21 Gesellschaft zur Förderung der industrieorientierten Forschung an den schweizerischen Hochschulen und weiteren Institutionen Infrarot-opto-elektronischer bauteil
US4649411A (en) * 1984-12-17 1987-03-10 Motorola, Inc. Gallium arsenide bipolar ECL circuit structure
JP2553510B2 (ja) * 1985-03-25 1996-11-13 日本電気株式会社 半導体装置およびその製造方法
US4716445A (en) * 1986-01-17 1987-12-29 Nec Corporation Heterojunction bipolar transistor having a base region of germanium
JPS6312177A (ja) * 1986-07-03 1988-01-19 Fujitsu Ltd 超高周波トランジスタ
US4872040A (en) * 1987-04-23 1989-10-03 International Business Machines Corporation Self-aligned heterojunction transistor
JPH01175256A (ja) * 1987-12-29 1989-07-11 Nec Corp ヘテロ構造バイポーラ・トランジスタおよびその製造方法
US4972246A (en) * 1988-03-22 1990-11-20 International Business Machines Corp. Effective narrow band gap base transistor
GB8817459D0 (en) * 1988-07-22 1988-08-24 Gen Electric Semiconductor devices
JPH08250940A (ja) * 1995-03-15 1996-09-27 Toshiba Corp 半導体装置
US6365478B1 (en) * 2000-09-22 2002-04-02 Trw Inc. Solid state electronic device fabrication using crystalline defect control
JP2003023011A (ja) * 2001-07-05 2003-01-24 Matsushita Electric Ind Co Ltd バイポーラトランジスタ装置及びその製造方法
US6577058B2 (en) * 2001-10-12 2003-06-10 Hewlett-Packard Development Company, L.P. Injection cold emitter with negative electron affinity based on wide-gap semiconductor structure with controlling base
US7723754B2 (en) * 2004-07-28 2010-05-25 Massachusetts Institute Of Technology Ge photodetectors
FR2879818B1 (fr) * 2004-12-17 2007-04-20 Commissariat Energie Atomique Photodetecteur a semi-conducteur, dispositif de detection multi-spectrale d'un rayonnement electromagnetique mettant en oeuvre un tel photodetecteur, et procede de mise en oeuvre d'un tel dispositif
US7531826B2 (en) * 2005-06-01 2009-05-12 Intevac, Inc. Photocathode structure and operation
US7772120B2 (en) * 2007-01-09 2010-08-10 International Business Machines Corporation Chemical vapor deposition method for the incorporation of nitrogen into materials including germanium and antimony
GB2467935B (en) * 2009-02-19 2013-10-30 Iqe Silicon Compounds Ltd Formation of thin layers of GaAs and germanium materials
US8154028B2 (en) * 2010-01-28 2012-04-10 Howard University Infrared external photoemissive detector
US8441084B2 (en) * 2011-03-15 2013-05-14 International Business Machines Corporation Horizontal polysilicon-germanium heterojunction bipolar transistor
US8492794B2 (en) * 2011-03-15 2013-07-23 International Business Machines Corporation Vertical polysilicon-germanium heterojunction bipolar transistor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3211970A (en) * 1957-05-06 1965-10-12 Rca Corp Semiconductor devices
NL121135C (ru) * 1960-01-29
FR1335282A (fr) * 1961-08-30 1963-08-16 Gen Electric Composés semi-conducteurs, procédés de préparation et de dépôt de ceux-ci, et dispositifs semi-conducteurs ainsi obtenus
US3466512A (en) * 1967-05-29 1969-09-09 Bell Telephone Labor Inc Impact avalanche transit time diodes with heterojunction structure
US3780359A (en) * 1971-12-20 1973-12-18 Ibm Bipolar transistor with a heterojunction emitter and a method fabricating the same

Also Published As

Publication number Publication date
GB1499561A (en) 1978-02-01
DE2501785A1 (de) 1975-11-20
CH599681A5 (ru) 1978-05-31
JPS50119567A (ru) 1975-09-19
BE824475A (fr) 1975-05-15
AU7731575A (en) 1976-07-15
FR2258710A1 (ru) 1975-08-18
FR2258710B1 (ru) 1979-08-17
NL7500594A (nl) 1975-07-22
US4119994A (en) 1978-10-10

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