JPS50119567A - - Google Patents

Info

Publication number
JPS50119567A
JPS50119567A JP831475A JP831475A JPS50119567A JP S50119567 A JPS50119567 A JP S50119567A JP 831475 A JP831475 A JP 831475A JP 831475 A JP831475 A JP 831475A JP S50119567 A JPS50119567 A JP S50119567A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP831475A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS50119567A publication Critical patent/JPS50119567A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
JP831475A 1974-01-18 1975-01-18 Pending JPS50119567A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US43470774A 1974-01-18 1974-01-18

Publications (1)

Publication Number Publication Date
JPS50119567A true JPS50119567A (ja) 1975-09-19

Family

ID=23725329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP831475A Pending JPS50119567A (ja) 1974-01-18 1975-01-18

Country Status (10)

Country Link
US (1) US4119994A (ja)
JP (1) JPS50119567A (ja)
AU (1) AU7731575A (ja)
BE (1) BE824475A (ja)
CA (1) CA1023878A (ja)
CH (1) CH599681A5 (ja)
DE (1) DE2501785A1 (ja)
FR (1) FR2258710B1 (ja)
GB (1) GB1499561A (ja)
NL (1) NL7500594A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01175256A (ja) * 1987-12-29 1989-07-11 Nec Corp ヘテロ構造バイポーラ・トランジスタおよびその製造方法
JP2013518448A (ja) * 2010-01-28 2013-05-20 ハワード ユニバーシティ 赤外線外部光電子放出検出器

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2379169A1 (fr) * 1977-01-28 1978-08-25 Thomson Csf Diode a avalanche constituee par une hetero-jonction et oscillateur en mode dit " a temps de transit " comportant une telle diode
FR2408221A1 (fr) * 1977-10-04 1979-06-01 Thomson Csf Structure du type metal-germanium - arseniure de gallium et oscillateur utilisant une telle structure
FR2408915A1 (fr) * 1977-11-10 1979-06-08 Thomson Csf Photodiode a heterojonction, fonctionnant en avalanche sous une faible tension de polarisation
US4188710A (en) * 1978-08-11 1980-02-19 The United States Of America As Represented By The Secretary Of The Navy Ohmic contacts for group III-V n-type semiconductors using epitaxial germanium films
JPS56133867A (en) * 1980-03-21 1981-10-20 Semiconductor Res Found Thermoelectric emission transistor
US4316206A (en) * 1980-04-14 1982-02-16 The United States Of America As Represented By The Secretary Of The Navy Two color narrow bandwidth detector
US4395722A (en) * 1980-10-21 1983-07-26 The United States Of America As Represented By The Secretary Of The Army Heterojunction transistor
JPS57147284A (en) * 1981-03-06 1982-09-11 Fujitsu Ltd Semiconductor device
FR2507386A1 (fr) * 1981-06-03 1982-12-10 Labo Electronique Physique Dispositif semi-conducteur, emetteur d'electrons, dont la couche active possede un gradient de dopage
US4672404A (en) * 1982-09-17 1987-06-09 Cornell Research Foundation, Inc. Ballistic heterojunction bipolar transistor
US4728616A (en) * 1982-09-17 1988-03-01 Cornell Research Foundation, Inc. Ballistic heterojunction bipolar transistor
US4794440A (en) * 1983-05-25 1988-12-27 American Telephone And Telegraph Company, At&T Bell Laboratories Heterojunction bipolar transistor
US4649405A (en) * 1984-04-10 1987-03-10 Cornell Research Foundation, Inc. Electron ballistic injection and extraction for very high efficiency, high frequency transferred electron devices
JPS60227341A (ja) * 1984-04-25 1985-11-12 Toshiba Corp 撮像管の光導電タ−ゲツト
EP0194265B1 (de) * 1984-07-10 1990-02-21 Gesellschaft zur Förderung der industrieorientierten Forschung an den schweizerischen Hochschulen und weiteren Institutionen Infrarot-opto-elektronischer bauteil
US4649411A (en) * 1984-12-17 1987-03-10 Motorola, Inc. Gallium arsenide bipolar ECL circuit structure
JP2553510B2 (ja) * 1985-03-25 1996-11-13 日本電気株式会社 半導体装置およびその製造方法
US4716445A (en) * 1986-01-17 1987-12-29 Nec Corporation Heterojunction bipolar transistor having a base region of germanium
JPS6312177A (ja) * 1986-07-03 1988-01-19 Fujitsu Ltd 超高周波トランジスタ
US4872040A (en) * 1987-04-23 1989-10-03 International Business Machines Corporation Self-aligned heterojunction transistor
US4972246A (en) * 1988-03-22 1990-11-20 International Business Machines Corp. Effective narrow band gap base transistor
GB8817459D0 (en) * 1988-07-22 1988-08-24 Gen Electric Semiconductor devices
JPH08250940A (ja) * 1995-03-15 1996-09-27 Toshiba Corp 半導体装置
US6365478B1 (en) * 2000-09-22 2002-04-02 Trw Inc. Solid state electronic device fabrication using crystalline defect control
JP2003023011A (ja) * 2001-07-05 2003-01-24 Matsushita Electric Ind Co Ltd バイポーラトランジスタ装置及びその製造方法
US6577058B2 (en) * 2001-10-12 2003-06-10 Hewlett-Packard Development Company, L.P. Injection cold emitter with negative electron affinity based on wide-gap semiconductor structure with controlling base
WO2006015280A2 (en) * 2004-07-28 2006-02-09 Massachusetts Institute Of Technology Photodetectors including germanium
FR2879818B1 (fr) * 2004-12-17 2007-04-20 Commissariat Energie Atomique Photodetecteur a semi-conducteur, dispositif de detection multi-spectrale d'un rayonnement electromagnetique mettant en oeuvre un tel photodetecteur, et procede de mise en oeuvre d'un tel dispositif
US7531826B2 (en) * 2005-06-01 2009-05-12 Intevac, Inc. Photocathode structure and operation
US7772120B2 (en) * 2007-01-09 2010-08-10 International Business Machines Corporation Chemical vapor deposition method for the incorporation of nitrogen into materials including germanium and antimony
GB2467935B (en) * 2009-02-19 2013-10-30 Iqe Silicon Compounds Ltd Formation of thin layers of GaAs and germanium materials
US8441084B2 (en) * 2011-03-15 2013-05-14 International Business Machines Corporation Horizontal polysilicon-germanium heterojunction bipolar transistor
US8492794B2 (en) * 2011-03-15 2013-07-23 International Business Machines Corporation Vertical polysilicon-germanium heterojunction bipolar transistor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3211970A (en) * 1957-05-06 1965-10-12 Rca Corp Semiconductor devices
NL121135C (ja) * 1960-01-29
FR1335282A (fr) * 1961-08-30 1963-08-16 Gen Electric Composés semi-conducteurs, procédés de préparation et de dépôt de ceux-ci, et dispositifs semi-conducteurs ainsi obtenus
US3466512A (en) * 1967-05-29 1969-09-09 Bell Telephone Labor Inc Impact avalanche transit time diodes with heterojunction structure
US3780359A (en) * 1971-12-20 1973-12-18 Ibm Bipolar transistor with a heterojunction emitter and a method fabricating the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01175256A (ja) * 1987-12-29 1989-07-11 Nec Corp ヘテロ構造バイポーラ・トランジスタおよびその製造方法
JP2013518448A (ja) * 2010-01-28 2013-05-20 ハワード ユニバーシティ 赤外線外部光電子放出検出器

Also Published As

Publication number Publication date
BE824475A (fr) 1975-05-15
CA1023878A (en) 1978-01-03
FR2258710B1 (ja) 1979-08-17
CH599681A5 (ja) 1978-05-31
GB1499561A (en) 1978-02-01
FR2258710A1 (ja) 1975-08-18
US4119994A (en) 1978-10-10
DE2501785A1 (de) 1975-11-20
NL7500594A (nl) 1975-07-22
AU7731575A (en) 1976-07-15

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