CA1016613A - Protective diode network for mos devices - Google Patents

Protective diode network for mos devices

Info

Publication number
CA1016613A
CA1016613A CA218,864A CA218864A CA1016613A CA 1016613 A CA1016613 A CA 1016613A CA 218864 A CA218864 A CA 218864A CA 1016613 A CA1016613 A CA 1016613A
Authority
CA
Canada
Prior art keywords
mos devices
protective diode
diode network
network
protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA218,864A
Other languages
English (en)
Inventor
Otto H. Schade (Jr.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA1016613A publication Critical patent/CA1016613A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
CA218,864A 1974-02-11 1975-01-28 Protective diode network for mos devices Expired CA1016613A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US441050A US3879640A (en) 1974-02-11 1974-02-11 Protective diode network for MOS devices

Publications (1)

Publication Number Publication Date
CA1016613A true CA1016613A (en) 1977-08-30

Family

ID=23751301

Family Applications (1)

Application Number Title Priority Date Filing Date
CA218,864A Expired CA1016613A (en) 1974-02-11 1975-01-28 Protective diode network for mos devices

Country Status (11)

Country Link
US (1) US3879640A (nl)
JP (1) JPS5436032B2 (nl)
CA (1) CA1016613A (nl)
DE (1) DE2505573C3 (nl)
FR (1) FR2260888B1 (nl)
GB (1) GB1488177A (nl)
IN (1) IN142143B (nl)
IT (1) IT1028387B (nl)
MY (1) MY8000141A (nl)
NL (1) NL7501241A (nl)
SE (1) SE396508B (nl)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4050031A (en) * 1976-03-01 1977-09-20 Signetics Corporation Circuit and structure having high input impedance and DC return
JPS6041463B2 (ja) * 1976-11-19 1985-09-17 株式会社日立製作所 ダイナミツク記憶装置
US4044313A (en) * 1976-12-01 1977-08-23 Rca Corporation Protective network for an insulated-gate field-effect (IGFET) differential amplifier
DE2751289A1 (de) * 1977-11-16 1979-05-17 Siemens Ag Mos-fet-differenzverstaerker
US4158178A (en) * 1978-05-15 1979-06-12 Rca Corporation Anti-latch circuit for amplifier stage including bipolar and field-effect transistors
US4206418A (en) * 1978-07-03 1980-06-03 Rca Corporation Circuit for limiting voltage differential in differential amplifiers
US4211941A (en) * 1978-08-03 1980-07-08 Rca Corporation Integrated circuitry including low-leakage capacitance
JPS5531354U (nl) * 1978-08-18 1980-02-29
US4532443A (en) * 1983-06-27 1985-07-30 Sundstrand Corporation Parallel MOSFET power switch circuit
US4864454A (en) * 1988-04-21 1989-09-05 Analog Devices, Incorporated Means for reducing damage to JFETs from electrostatic discharge events
US4922371A (en) * 1988-11-01 1990-05-01 Teledyne Semiconductor ESD protection circuit for MOS integrated circuits
FR2685817B1 (fr) * 1991-12-31 1994-03-11 Sgs Thomson Microelectronics Sa Protection generale d'un circuit integre contre les surcharges permanentes et decharges electrostatiques.
KR950006352B1 (ko) * 1992-12-31 1995-06-14 삼성전자주식회사 정류성 전송 게이트와 그 응용회로
JPH1174742A (ja) * 1997-08-27 1999-03-16 Denso Corp オペアンプ
US6400541B1 (en) 1999-10-27 2002-06-04 Analog Devices, Inc. Circuit for protection of differential inputs against electrostatic discharge
US6507471B2 (en) * 2000-12-07 2003-01-14 Koninklijke Philips Electronics N.V. ESD protection devices
US6784729B1 (en) * 2002-08-14 2004-08-31 Advanced Micro Devices, Inc. Differential amplifier with input gate oxide breakdown avoidance
US7969697B2 (en) * 2008-04-22 2011-06-28 Exar Corporation Low-voltage CMOS space-efficient 15 KV ESD protection for common-mode high-voltage receivers
JP6065554B2 (ja) * 2012-12-03 2017-01-25 富士電機株式会社 比較器
JP7112233B2 (ja) * 2018-04-09 2022-08-03 株式会社豊田中央研究所 差動増幅回路
CN112825477A (zh) * 2019-11-20 2021-05-21 圣邦微电子（北京）股份有限公司 一种高压运算放大器及其输入级电路
CN116931631A (zh) * 2022-04-12 2023-10-24 圣邦微电子（北京）股份有限公司 一种无偏置电流的高压输入级电路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3434068A (en) * 1967-06-19 1969-03-18 Texas Instruments Inc Integrated circuit amplifier utilizing field-effect transistors having parallel reverse connected diodes as bias circuits therefor
JPS5122794B1 (nl) * 1970-06-24 1976-07-12
US3806773A (en) * 1971-07-17 1974-04-23 Sony Corp Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action

Also Published As

Publication number Publication date
JPS5436032B2 (nl) 1979-11-07
MY8000141A (en) 1980-12-31
NL7501241A (nl) 1975-08-13
SE396508B (sv) 1977-09-19
DE2505573A1 (de) 1975-08-14
JPS50115984A (nl) 1975-09-10
DE2505573B2 (de) 1978-01-19
GB1488177A (en) 1977-10-05
AU7758475A (en) 1976-07-29
DE2505573C3 (de) 1978-09-28
FR2260888B1 (nl) 1981-09-18
SE7500109L (nl) 1975-08-12
IN142143B (nl) 1977-06-04
IT1028387B (it) 1979-01-30
US3879640A (en) 1975-04-22
FR2260888A1 (nl) 1975-09-05

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