CA1013456A - Semiconductor injection laser with reduced divergence of emitted beam - Google Patents

Semiconductor injection laser with reduced divergence of emitted beam

Info

Publication number
CA1013456A
CA1013456A CA200,034A CA200034A CA1013456A CA 1013456 A CA1013456 A CA 1013456A CA 200034 A CA200034 A CA 200034A CA 1013456 A CA1013456 A CA 1013456A
Authority
CA
Canada
Prior art keywords
emitted beam
injection laser
semiconductor injection
reduced divergence
divergence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA200,034A
Other languages
English (en)
Other versions
CA200034S (en
Inventor
Henry Kressel
Harry F. Lockwood
Frank Z. Hawrylo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA1013456A publication Critical patent/CA1013456A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CA200,034A 1973-05-29 1974-05-15 Semiconductor injection laser with reduced divergence of emitted beam Expired CA1013456A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00364665A US3855607A (en) 1973-05-29 1973-05-29 Semiconductor injection laser with reduced divergence of emitted beam

Publications (1)

Publication Number Publication Date
CA1013456A true CA1013456A (en) 1977-07-05

Family

ID=23435523

Family Applications (1)

Application Number Title Priority Date Filing Date
CA200,034A Expired CA1013456A (en) 1973-05-29 1974-05-15 Semiconductor injection laser with reduced divergence of emitted beam

Country Status (7)

Country Link
US (1) US3855607A (enExample)
JP (1) JPS5022589A (enExample)
CA (1) CA1013456A (enExample)
DE (1) DE2425363A1 (enExample)
FR (1) FR2232108A1 (enExample)
GB (1) GB1458426A (enExample)
NL (1) NL7407116A (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5751276B2 (enExample) * 1973-10-23 1982-11-01
US3938172A (en) * 1974-05-22 1976-02-10 Rca Corporation Semiconductor injection laser
JPS5235999B2 (enExample) * 1974-08-26 1977-09-12
JPS5734671B2 (enExample) * 1974-09-20 1982-07-24
FR2299730A1 (fr) * 1975-01-31 1976-08-27 Thomson Csf Diodes electroluminescentes et leur procede de fabrication
US3990101A (en) * 1975-10-20 1976-11-02 Rca Corporation Solar cell device having two heterojunctions
US4063189A (en) * 1976-04-08 1977-12-13 Xerox Corporation Leaky wave diode laser
US4235507A (en) * 1977-09-16 1980-11-25 Hitachi, Ltd. Optical system to condense light from a semiconductor laser into a circular spot
US4160258A (en) * 1977-11-18 1979-07-03 Bell Telephone Laboratories, Incorporated Optically coupled linear bilateral transistor
NL184715C (nl) * 1978-09-20 1989-10-02 Hitachi Ltd Halfgeleiderlaserinrichting.
JPH01280368A (ja) * 1988-05-06 1989-11-10 Sharp Corp 化合物半導体発光素子
RO102871B1 (en) * 1990-04-20 1993-08-16 Inst De Fizica Si Tehnologia M High power laser diode
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JPH11163458A (ja) * 1997-11-26 1999-06-18 Mitsui Chem Inc 半導体レーザ装置
US6508960B1 (en) 1999-07-26 2003-01-21 The United States Of America As Represented By The Secretary Of The Air Force Telluride quaternary nonlinear optic materials
US6304583B1 (en) 1999-07-26 2001-10-16 The United States Of America As Represented By The Secretary Of The Air Force Utilization of telluride quaternary nonlinear optic materials
JP2009504230A (ja) * 2005-08-11 2009-02-05 メディモップ・メディカル・プロジェクツ・リミテッド 医薬バイアルにフェイルセーフにて正確にスナップ嵌めする液体薬剤の移し替え装置
US7830938B2 (en) * 2008-12-15 2010-11-09 Jds Uniphase Corporation Laser diode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3758875A (en) * 1970-05-01 1973-09-11 Bell Telephone Labor Inc Double heterostructure junction lasers
JPS502235B1 (enExample) * 1970-09-07 1975-01-24
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
US3733561A (en) * 1971-07-27 1973-05-15 Bell Telephone Labor Inc High power, fundamental transverse mode operation in double heterostructure lasers
US3747016A (en) * 1971-08-26 1973-07-17 Rca Corp Semiconductor injection laser

Also Published As

Publication number Publication date
GB1458426A (en) 1976-12-15
JPS5022589A (enExample) 1975-03-11
DE2425363A1 (de) 1975-01-02
FR2232108A1 (enExample) 1974-12-27
US3855607A (en) 1974-12-17
NL7407116A (enExample) 1974-12-03

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