FR2232108A1 - - Google Patents

Info

Publication number
FR2232108A1
FR2232108A1 FR7418545A FR7418545A FR2232108A1 FR 2232108 A1 FR2232108 A1 FR 2232108A1 FR 7418545 A FR7418545 A FR 7418545A FR 7418545 A FR7418545 A FR 7418545A FR 2232108 A1 FR2232108 A1 FR 2232108A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7418545A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2232108A1 publication Critical patent/FR2232108A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR7418545A 1973-05-29 1974-05-29 Withdrawn FR2232108A1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00364665A US3855607A (en) 1973-05-29 1973-05-29 Semiconductor injection laser with reduced divergence of emitted beam

Publications (1)

Publication Number Publication Date
FR2232108A1 true FR2232108A1 (enExample) 1974-12-27

Family

ID=23435523

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7418545A Withdrawn FR2232108A1 (enExample) 1973-05-29 1974-05-29

Country Status (7)

Country Link
US (1) US3855607A (enExample)
JP (1) JPS5022589A (enExample)
CA (1) CA1013456A (enExample)
DE (1) DE2425363A1 (enExample)
FR (1) FR2232108A1 (enExample)
GB (1) GB1458426A (enExample)
NL (1) NL7407116A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2347802A1 (fr) * 1976-04-08 1977-11-04 Xerox Corp Diode laser a ondes de fuite

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5751276B2 (enExample) * 1973-10-23 1982-11-01
US3938172A (en) * 1974-05-22 1976-02-10 Rca Corporation Semiconductor injection laser
JPS5235999B2 (enExample) * 1974-08-26 1977-09-12
JPS5734671B2 (enExample) * 1974-09-20 1982-07-24
FR2299730A1 (fr) * 1975-01-31 1976-08-27 Thomson Csf Diodes electroluminescentes et leur procede de fabrication
US3990101A (en) * 1975-10-20 1976-11-02 Rca Corporation Solar cell device having two heterojunctions
US4235507A (en) * 1977-09-16 1980-11-25 Hitachi, Ltd. Optical system to condense light from a semiconductor laser into a circular spot
US4160258A (en) * 1977-11-18 1979-07-03 Bell Telephone Laboratories, Incorporated Optically coupled linear bilateral transistor
NL184715C (nl) * 1978-09-20 1989-10-02 Hitachi Ltd Halfgeleiderlaserinrichting.
JPH01280368A (ja) * 1988-05-06 1989-11-10 Sharp Corp 化合物半導体発光素子
RO102871B1 (en) * 1990-04-20 1993-08-16 Inst De Fizica Si Tehnologia M High power laser diode
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JPH11163458A (ja) * 1997-11-26 1999-06-18 Mitsui Chem Inc 半導体レーザ装置
US6508960B1 (en) 1999-07-26 2003-01-21 The United States Of America As Represented By The Secretary Of The Air Force Telluride quaternary nonlinear optic materials
US6304583B1 (en) 1999-07-26 2001-10-16 The United States Of America As Represented By The Secretary Of The Air Force Utilization of telluride quaternary nonlinear optic materials
JP2009504230A (ja) * 2005-08-11 2009-02-05 メディモップ・メディカル・プロジェクツ・リミテッド 医薬バイアルにフェイルセーフにて正確にスナップ嵌めする液体薬剤の移し替え装置
US7830938B2 (en) * 2008-12-15 2010-11-09 Jds Uniphase Corporation Laser diode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3758875A (en) * 1970-05-01 1973-09-11 Bell Telephone Labor Inc Double heterostructure junction lasers
JPS502235B1 (enExample) * 1970-09-07 1975-01-24
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
US3733561A (en) * 1971-07-27 1973-05-15 Bell Telephone Labor Inc High power, fundamental transverse mode operation in double heterostructure lasers
US3747016A (en) * 1971-08-26 1973-07-17 Rca Corp Semiconductor injection laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2347802A1 (fr) * 1976-04-08 1977-11-04 Xerox Corp Diode laser a ondes de fuite

Also Published As

Publication number Publication date
GB1458426A (en) 1976-12-15
JPS5022589A (enExample) 1975-03-11
CA1013456A (en) 1977-07-05
DE2425363A1 (de) 1975-01-02
US3855607A (en) 1974-12-17
NL7407116A (enExample) 1974-12-03

Similar Documents

Publication Publication Date Title
AR201758A1 (enExample)
AU476761B2 (enExample)
AU465372B2 (enExample)
AR201235Q (enExample)
AR201231Q (enExample)
AU474593B2 (enExample)
AU474511B2 (enExample)
AU474838B2 (enExample)
AU465453B2 (enExample)
AU471343B2 (enExample)
AU465434B2 (enExample)
AU450229B2 (enExample)
AU476714B2 (enExample)
AR201229Q (enExample)
AU466283B2 (enExample)
AR199451A1 (enExample)
AU476696B2 (enExample)
AU472848B2 (enExample)
AU477823B2 (enExample)
AR197627A1 (enExample)
AR196382A1 (enExample)
AR200256A1 (enExample)
AU461342B2 (enExample)
AR210729A1 (enExample)
AR193950A1 (enExample)

Legal Events

Date Code Title Description
ST Notification of lapse