DE2425363A1 - Halbleiterinjektionslaser - Google Patents

Halbleiterinjektionslaser

Info

Publication number
DE2425363A1
DE2425363A1 DE19742425363 DE2425363A DE2425363A1 DE 2425363 A1 DE2425363 A1 DE 2425363A1 DE 19742425363 DE19742425363 DE 19742425363 DE 2425363 A DE2425363 A DE 2425363A DE 2425363 A1 DE2425363 A1 DE 2425363A1
Authority
DE
Germany
Prior art keywords
zone
zones
injection laser
semiconductor injection
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19742425363
Other languages
German (de)
English (en)
Inventor
Frank Zygmunt Hawrylo
Henry Kressel
Harry Francis Lockwood
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2425363A1 publication Critical patent/DE2425363A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE19742425363 1973-05-29 1974-05-25 Halbleiterinjektionslaser Withdrawn DE2425363A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00364665A US3855607A (en) 1973-05-29 1973-05-29 Semiconductor injection laser with reduced divergence of emitted beam

Publications (1)

Publication Number Publication Date
DE2425363A1 true DE2425363A1 (de) 1975-01-02

Family

ID=23435523

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19742425363 Withdrawn DE2425363A1 (de) 1973-05-29 1974-05-25 Halbleiterinjektionslaser

Country Status (7)

Country Link
US (1) US3855607A (enExample)
JP (1) JPS5022589A (enExample)
CA (1) CA1013456A (enExample)
DE (1) DE2425363A1 (enExample)
FR (1) FR2232108A1 (enExample)
GB (1) GB1458426A (enExample)
NL (1) NL7407116A (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5751276B2 (enExample) * 1973-10-23 1982-11-01
US3938172A (en) * 1974-05-22 1976-02-10 Rca Corporation Semiconductor injection laser
JPS5235999B2 (enExample) * 1974-08-26 1977-09-12
JPS5734671B2 (enExample) * 1974-09-20 1982-07-24
FR2299730A1 (fr) * 1975-01-31 1976-08-27 Thomson Csf Diodes electroluminescentes et leur procede de fabrication
US3990101A (en) * 1975-10-20 1976-11-02 Rca Corporation Solar cell device having two heterojunctions
US4063189A (en) * 1976-04-08 1977-12-13 Xerox Corporation Leaky wave diode laser
US4235507A (en) * 1977-09-16 1980-11-25 Hitachi, Ltd. Optical system to condense light from a semiconductor laser into a circular spot
US4160258A (en) * 1977-11-18 1979-07-03 Bell Telephone Laboratories, Incorporated Optically coupled linear bilateral transistor
NL184715C (nl) * 1978-09-20 1989-10-02 Hitachi Ltd Halfgeleiderlaserinrichting.
JPH01280368A (ja) * 1988-05-06 1989-11-10 Sharp Corp 化合物半導体発光素子
RO102871B1 (en) * 1990-04-20 1993-08-16 Inst De Fizica Si Tehnologia M High power laser diode
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JPH11163458A (ja) * 1997-11-26 1999-06-18 Mitsui Chem Inc 半導体レーザ装置
US6508960B1 (en) 1999-07-26 2003-01-21 The United States Of America As Represented By The Secretary Of The Air Force Telluride quaternary nonlinear optic materials
US6304583B1 (en) 1999-07-26 2001-10-16 The United States Of America As Represented By The Secretary Of The Air Force Utilization of telluride quaternary nonlinear optic materials
JP2009504230A (ja) * 2005-08-11 2009-02-05 メディモップ・メディカル・プロジェクツ・リミテッド 医薬バイアルにフェイルセーフにて正確にスナップ嵌めする液体薬剤の移し替え装置
US7830938B2 (en) * 2008-12-15 2010-11-09 Jds Uniphase Corporation Laser diode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3758875A (en) * 1970-05-01 1973-09-11 Bell Telephone Labor Inc Double heterostructure junction lasers
JPS502235B1 (enExample) * 1970-09-07 1975-01-24
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
US3733561A (en) * 1971-07-27 1973-05-15 Bell Telephone Labor Inc High power, fundamental transverse mode operation in double heterostructure lasers
US3747016A (en) * 1971-08-26 1973-07-17 Rca Corp Semiconductor injection laser

Also Published As

Publication number Publication date
GB1458426A (en) 1976-12-15
JPS5022589A (enExample) 1975-03-11
CA1013456A (en) 1977-07-05
FR2232108A1 (enExample) 1974-12-27
US3855607A (en) 1974-12-17
NL7407116A (enExample) 1974-12-03

Similar Documents

Publication Publication Date Title
DE69107428T2 (de) Optoelektronische Vorrichtungen mit abstimmbarer Polarisation.
DE69020703T2 (de) Optoelektronische Vorrichtungen.
DE3924197C2 (de) Halbleiterlaser
DE2425363A1 (de) Halbleiterinjektionslaser
DE3751535T2 (de) Halbleiterlaser.
DE4135813C2 (de) Oberflächenemittierende Halbleiter-Laservorrichtung
DE2165006C3 (de) Halbleiterlaser
DE69407455T2 (de) Halbleiterlaser
DE69028734T2 (de) Optische Halbleitervorrichtung
DE2454733C2 (de) Halbleiterlaser
DE69132860T2 (de) Halbleiterlaser und Verfahren zu seiner Herstellung
DE69305058T2 (de) Im blau-grünen Bereich emittierender Injektionslaser
DE2710813A1 (de) Heterostruktur-halbleiterlaser
DE2120464B2 (de) Heterostruktur-Halbleiterdiode mit pn-übergang zur Verwendung als Injektionslaser
DE2822146C2 (de) Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode
DE2643503B2 (de) Verfahren zur Herstellung eines Injektionslasers
DE69112288T2 (de) Hochgeschwindigkeitsoptohalbleitervorrichtung mit mehrfachen Quantentöpfen.
DE2701102B2 (de) Halbleiter-Injektionslaser
DE3688490T2 (de) Lumineszentes halbleiterelement.
DE69030175T2 (de) Optische Halbleitervorrichtung
DE68911453T2 (de) Verfahren zur Herstellung einer Halbleitervorrichtung mit Wellenleiterstruktur.
DE2447536C2 (de) Halbleiterlaser
DE4002970C2 (enExample)
DE3888575T2 (de) Lichtemittierende Vorrichtung.
DE3934998A1 (de) Elektrisch wellenlaengenabstimmbarer halbleiterlaser

Legal Events

Date Code Title Description
8130 Withdrawal