CA1024638A - Double heterostructure laser - Google Patents

Double heterostructure laser

Info

Publication number
CA1024638A
CA1024638A CA201,452A CA201452A CA1024638A CA 1024638 A CA1024638 A CA 1024638A CA 201452 A CA201452 A CA 201452A CA 1024638 A CA1024638 A CA 1024638A
Authority
CA
Canada
Prior art keywords
double heterostructure
heterostructure laser
laser
double
heterostructure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA201,452A
Other languages
French (fr)
Other versions
CA201452S (en
Inventor
Izuo Hayashi
Isamu Sakuma
Yasuo Nannicki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Application granted granted Critical
Publication of CA1024638A publication Critical patent/CA1024638A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CA201,452A 1973-06-30 1974-06-03 Double heterostructure laser Expired CA1024638A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48074234A JPS5818790B2 (en) 1973-06-30 1973-06-30 double heterojunction laser

Publications (1)

Publication Number Publication Date
CA1024638A true CA1024638A (en) 1978-01-17

Family

ID=13541261

Family Applications (1)

Application Number Title Priority Date Filing Date
CA201,452A Expired CA1024638A (en) 1973-06-30 1974-06-03 Double heterostructure laser

Country Status (4)

Country Link
JP (1) JPS5818790B2 (en)
CA (1) CA1024638A (en)
DE (1) DE2423486C3 (en)
GB (1) GB1445207A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI854000L (en) * 1985-10-25 1987-04-16 Vsesojuzny Nauchno-Issledovatelsky Instrumentalny Institut SCREENING WITH A SLIDING SYSTEM.

Also Published As

Publication number Publication date
GB1445207A (en) 1976-08-04
JPS5023789A (en) 1975-03-14
DE2423486B2 (en) 1980-04-17
DE2423486A1 (en) 1975-01-23
JPS5818790B2 (en) 1983-04-14
DE2423486C3 (en) 1980-12-18

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Legal Events

Date Code Title Description
MKEX Expiry

Effective date: 19950117