CA1011467A - Complementary bipolar transistor structure and manufacture - Google Patents

Complementary bipolar transistor structure and manufacture

Info

Publication number
CA1011467A
CA1011467A CA181,671A CA181671A CA1011467A CA 1011467 A CA1011467 A CA 1011467A CA 181671 A CA181671 A CA 181671A CA 1011467 A CA1011467 A CA 1011467A
Authority
CA
Canada
Prior art keywords
manufacture
bipolar transistor
transistor structure
complementary bipolar
complementary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA181,671A
Other languages
English (en)
Other versions
CA181671S (en
Inventor
Tadaharu Tsuyuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of CA1011467A publication Critical patent/CA1011467A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/098—Layer conversion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
CA181,671A 1972-09-22 1973-09-21 Complementary bipolar transistor structure and manufacture Expired CA1011467A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47095341A JPS5942463B2 (ja) 1972-09-22 1972-09-22 半導体集積回路装置

Publications (1)

Publication Number Publication Date
CA1011467A true CA1011467A (en) 1977-05-31

Family

ID=14134981

Family Applications (1)

Application Number Title Priority Date Filing Date
CA181,671A Expired CA1011467A (en) 1972-09-22 1973-09-21 Complementary bipolar transistor structure and manufacture

Country Status (8)

Country Link
US (1) US3912555A (en, 2012)
JP (1) JPS5942463B2 (en, 2012)
CA (1) CA1011467A (en, 2012)
DE (1) DE2347745A1 (en, 2012)
FR (1) FR2200635B1 (en, 2012)
GB (1) GB1444633A (en, 2012)
IT (1) IT993367B (en, 2012)
NL (1) NL7313144A (en, 2012)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
JPS51123577A (en) * 1975-04-22 1976-10-28 Toshiba Corp Semiconductor integrating circuit including epitaxial base typ vertica l directional transistor
CA1047652A (en) * 1975-07-31 1979-01-30 National Semiconductor Corporation Monolithic integrated circuit transistor having very low collector resistance
US4013484A (en) * 1976-02-25 1977-03-22 Intel Corporation High density CMOS process
US4168997A (en) * 1978-10-10 1979-09-25 National Semiconductor Corporation Method for making integrated circuit transistors with isolation and substrate connected collectors utilizing simultaneous outdiffusion to convert an epitaxial layer
JPS55153365A (en) * 1979-05-17 1980-11-29 Toshiba Corp Manufacturing method of semiconductor device
US4274891A (en) * 1979-06-29 1981-06-23 International Business Machines Corporation Method of fabricating buried injector memory cell formed from vertical complementary bipolar transistor circuits utilizing mono-poly deposition
JPS5750473A (en) * 1980-09-11 1982-03-24 Nec Corp Semiconductor integrated circuit device
KR900001267B1 (ko) * 1983-11-30 1990-03-05 후지쓰 가부시끼가이샤 Soi형 반도체 장치의 제조방법
IT1218471B (it) * 1985-05-09 1990-04-19 Ates Componenti Elettron Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato
US4936928A (en) * 1985-11-27 1990-06-26 Raytheon Company Semiconductor device
US5014107A (en) * 1987-07-29 1991-05-07 Fairchild Semiconductor Corporation Process for fabricating complementary contactless vertical bipolar transistors
US5023194A (en) * 1988-02-11 1991-06-11 Exar Corporation Method of making a multicollector vertical pnp transistor
US4902633A (en) * 1988-05-09 1990-02-20 Motorola, Inc. Process for making a bipolar integrated circuit
US5159429A (en) * 1990-01-23 1992-10-27 International Business Machines Corporation Semiconductor device structure employing a multi-level epitaxial structure and method of manufacturing same
US5061652A (en) * 1990-01-23 1991-10-29 International Business Machines Corporation Method of manufacturing a semiconductor device structure employing a multi-level epitaxial structure
EP0534632B1 (en) * 1991-09-24 2002-01-16 Matsushita Electronics Corporation, Ltd. Semiconductor integrated circuit device and method of fabricating the same
US5623159A (en) * 1994-10-03 1997-04-22 Motorola, Inc. Integrated circuit isolation structure for suppressing high-frequency cross-talk
US5633180A (en) * 1995-06-01 1997-05-27 Harris Corporation Method of forming P-type islands over P-type buried layer
JP5048242B2 (ja) * 2005-11-30 2012-10-17 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3449643A (en) * 1966-09-09 1969-06-10 Hitachi Ltd Semiconductor integrated circuit device
FR1559608A (en, 2012) * 1967-06-30 1969-03-14
US3638079A (en) * 1970-01-28 1972-01-25 Sylvania Electric Prod Complementary semiconductor devices in monolithic integrated circuits

Also Published As

Publication number Publication date
IT993367B (it) 1975-09-30
GB1444633A (en) 1976-08-04
FR2200635B1 (en, 2012) 1978-11-10
DE2347745A1 (de) 1974-04-04
JPS4952987A (en, 2012) 1974-05-23
NL7313144A (en, 2012) 1974-03-26
FR2200635A1 (en, 2012) 1974-04-19
US3912555A (en) 1975-10-14
JPS5942463B2 (ja) 1984-10-15

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