BRPI1006585A2 - método de integração metal-dual e dielétrica-dual para transitores de efeito de campo de metal de alta constante (alto-k) e dispositivo semicondutor - Google Patents
método de integração metal-dual e dielétrica-dual para transitores de efeito de campo de metal de alta constante (alto-k) e dispositivo semicondutorInfo
- Publication number
- BRPI1006585A2 BRPI1006585A2 BRPI1006585-7A BRPI1006585A BRPI1006585A2 BR PI1006585 A2 BRPI1006585 A2 BR PI1006585A2 BR PI1006585 A BRPI1006585 A BR PI1006585A BR PI1006585 A2 BRPI1006585 A2 BR PI1006585A2
- Authority
- BR
- Brazil
- Prior art keywords
- metal
- dual
- dielectric
- present
- semiconductor device
- Prior art date
Links
- 239000002184 metal Substances 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000005669 field effect Effects 0.000 title abstract 2
- 230000010354 integration Effects 0.000 title abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- 239000004020 conductor Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Abstract
método de integração metal-dual e dielétrica-dual para transistores de efeito de campo de metal de alta constante (al to-k) e dispositivo semicondutor a presente invenção, em uma concretização, fornece um método de formação de dispositivo semicondutor que inclui fornecimento de substrato incluindo uma região tipo primeira condutividade e uma região tipo segunda condutividade; formando um empilhamento de porta incluindo uma porta dielétrica acima da região tipo primeira condutividade e a região tipo segunda condutividade do substrato e um primeiro condutor porta de metal que recobre a porta dielétrica de alta constante (alto-k); removendo uma parte do primeiro condutor porta de metal que está presente na região tipo primeira condutividade para expor a porta dielétrica presente na região tipo primeira condutividade; aplicando um plasma à base de nitrogênio ao substrato, onde o plasma à base de nitrogênio nitreta a porta dielétrica que está presente na região tipo primeira condutividade e nitreta o primeiro condutor porta de metal que está presente na região tipo segunda coridutividade; e formando uma segundo condutor porta de metal que recobre pelo menos a porta dielétrica presente na região tipo primeira condutividade.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/423,236 US7943457B2 (en) | 2009-04-14 | 2009-04-14 | Dual metal and dual dielectric integration for metal high-k FETs |
US12/423,236 | 2009-04-14 | ||
PCT/US2010/030980 WO2010120842A1 (en) | 2009-04-14 | 2010-04-14 | Dual metal and dual dielectric integration for metal high-k fets |
Publications (1)
Publication Number | Publication Date |
---|---|
BRPI1006585A2 true BRPI1006585A2 (pt) | 2019-04-02 |
Family
ID=42933697
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI1006585-7A BRPI1006585A2 (pt) | 2009-04-14 | 2010-04-14 | método de integração metal-dual e dielétrica-dual para transitores de efeito de campo de metal de alta constante (alto-k) e dispositivo semicondutor |
Country Status (7)
Country | Link |
---|---|
US (2) | US7943457B2 (pt) |
EP (1) | EP2419925B1 (pt) |
JP (1) | JP5579828B2 (pt) |
CN (1) | CN102341894A (pt) |
BR (1) | BRPI1006585A2 (pt) |
TW (1) | TWI476822B (pt) |
WO (1) | WO2010120842A1 (pt) |
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JP5151303B2 (ja) * | 2007-08-07 | 2013-02-27 | ソニー株式会社 | 半導体装置の製造方法 |
JP2009044051A (ja) * | 2007-08-10 | 2009-02-26 | Panasonic Corp | 半導体装置及びその製造方法 |
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2009
- 2009-04-14 US US12/423,236 patent/US7943457B2/en active Active
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2010
- 2010-03-30 TW TW099109564A patent/TWI476822B/zh active
- 2010-04-14 CN CN2010800101888A patent/CN102341894A/zh active Pending
- 2010-04-14 BR BRPI1006585-7A patent/BRPI1006585A2/pt not_active IP Right Cessation
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EP2419925A4 (en) | 2016-03-30 |
TWI476822B (zh) | 2015-03-11 |
CN102341894A (zh) | 2012-02-01 |
EP2419925A1 (en) | 2012-02-22 |
WO2010120842A1 (en) | 2010-10-21 |
JP2012524413A (ja) | 2012-10-11 |
TW201108309A (en) | 2011-03-01 |
JP5579828B2 (ja) | 2014-08-27 |
US20110180880A1 (en) | 2011-07-28 |
US7943457B2 (en) | 2011-05-17 |
EP2419925B1 (en) | 2020-07-08 |
US20100258881A1 (en) | 2010-10-14 |
US8436427B2 (en) | 2013-05-07 |
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