BRPI0509189A - métodos para a formação de filmes de alfa e beta tántalo com microestruturas controladas - Google Patents

métodos para a formação de filmes de alfa e beta tántalo com microestruturas controladas

Info

Publication number
BRPI0509189A
BRPI0509189A BRPI0509189-6A BRPI0509189A BRPI0509189A BR PI0509189 A BRPI0509189 A BR PI0509189A BR PI0509189 A BRPI0509189 A BR PI0509189A BR PI0509189 A BRPI0509189 A BR PI0509189A
Authority
BR
Brazil
Prior art keywords
films
methods
microstructures
tantalum films
forming alpha
Prior art date
Application number
BRPI0509189-6A
Other languages
English (en)
Inventor
Jagdish Narayan
Prabhat Kumar
Richard Wu
Original Assignee
Starck H C Inc
Univ North Carolina State
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Starck H C Inc, Univ North Carolina State filed Critical Starck H C Inc
Publication of BRPI0509189A publication Critical patent/BRPI0509189A/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

MéTODOS PARA A FORMAçãO DE FILMES DE ALFA E BETA TáNTALO COM MICROESTRUTURAS CONTROLADAS. A presente invenção refere-se a filmes de tântalo finos que tem novas microestruturas. Os filmes tem microestruturas, tais como cristalinas, de cristal único e amorfas. Estes filmes provêem excelentes propriedades de barreira de difusão e são úteis nos dispositivos microeletrónicos. Métodos para formar os filmes que utilizam os métodos de deposição de laser pulsado (PLD) e de epitaxia de feixe molecular (MBE) são também providos, como são os dispositivos microeletrónicos que incorporam estes filmes.
BRPI0509189-6A 2004-03-24 2005-03-24 métodos para a formação de filmes de alfa e beta tántalo com microestruturas controladas BRPI0509189A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US55575904P 2004-03-24 2004-03-24
PCT/US2005/009763 WO2005095263A2 (en) 2004-03-24 2005-03-24 Methods of forming alpha and beta tantalum films with controlled and new microstructures

Publications (1)

Publication Number Publication Date
BRPI0509189A true BRPI0509189A (pt) 2007-09-25

Family

ID=34963544

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0509189-6A BRPI0509189A (pt) 2004-03-24 2005-03-24 métodos para a formação de filmes de alfa e beta tántalo com microestruturas controladas

Country Status (9)

Country Link
US (1) US20070280848A1 (pt)
EP (3) EP2423158A1 (pt)
JP (1) JP5215658B2 (pt)
CN (1) CN1984839A (pt)
BR (1) BRPI0509189A (pt)
CA (1) CA2567032A1 (pt)
IL (1) IL178252A (pt)
MX (1) MXPA06010834A (pt)
WO (1) WO2005095263A2 (pt)

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DE102004021239B4 (de) * 2004-04-30 2017-04-06 Infineon Technologies Ag Lange getemperte integrierte Schaltungsanordnungen und deren Herstellungsverfahren
JP4207951B2 (ja) * 2005-12-06 2009-01-14 Ｔｄｋ株式会社 β相Ｔａ薄膜抵抗体及び該薄膜抵抗体を備えた薄膜磁気ヘッド
WO2007096485A2 (en) * 2006-02-23 2007-08-30 Picodeon Ltd Oy Coating on a metal substrate and a coated metal product
GB0803702D0 (en) 2008-02-28 2008-04-09 Isis Innovation Transparent conducting oxides
US8039394B2 (en) * 2009-06-26 2011-10-18 Seagate Technology Llc Methods of forming layers of alpha-tantalum
EP2275591B1 (en) * 2009-07-10 2014-03-19 Imec Method for manufacturing a mono-crystalline layer of germanium or aluminium on a substrate
GB0915376D0 (en) 2009-09-03 2009-10-07 Isis Innovation Transparent conducting oxides
WO2011030697A1 (en) * 2009-09-11 2011-03-17 Semiconductor Energy Laboratory Co., Ltd. Power storage device and method for manufacturing the same
JP5917027B2 (ja) 2010-06-30 2016-05-11 株式会社半導体エネルギー研究所 電極用材料の作製方法
US9136794B2 (en) 2011-06-22 2015-09-15 Research Triangle Institute, International Bipolar microelectronic device
WO2014085324A1 (en) * 2012-11-27 2014-06-05 President And Fellows Of Harvard College Crystal growth through irradiation with short laser pulses
CN106702240B (zh) * 2015-07-24 2018-12-18 中国科学院金属研究所 一种具有抗菌功能的医用钽铜合金及其制备
FR3099490B1 (fr) * 2019-08-02 2022-12-02 X Fab France Procédé de formation d’un film de tantale à basse résistivité
CN112440025B (zh) * 2019-09-02 2022-02-18 清华大学 用于电子器件的双面微纳复合预成型焊片及低温互连方法

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DE2110987B2 (de) * 1971-03-08 1978-11-16 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von dünnen Schichten aus Tantal
DE2215151C3 (de) * 1972-03-28 1979-05-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von dünnen Schichten aus Tantal
US4055602A (en) 1976-01-08 1977-10-25 The Upjohn Company 2-Decarboxy-2-hydroxy-methyl-5-oxa-17-phenyl-18,19,20-trinor-PGF-analogs
US4036708A (en) * 1976-05-13 1977-07-19 Bell Telephone Laboratories, Incorporated Technique for nucleating b.c.c. tantalum films on insulating substrates
US4325776A (en) * 1977-06-20 1982-04-20 Siemens Aktiengesellschaft Method for preparing coarse-crystal or single-crystal metal films
DE2924920A1 (de) * 1979-06-20 1981-01-22 Siemens Ag Verfahren zur herstellung grobkristalliner oder einkristalliner metalloder legierungsschichten
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Also Published As

Publication number Publication date
MXPA06010834A (es) 2007-03-23
JP2007530407A (ja) 2007-11-01
CA2567032A1 (en) 2005-10-13
IL178252A (en) 2011-11-30
US20070280848A1 (en) 2007-12-06
JP5215658B2 (ja) 2013-06-19
CN1984839A (zh) 2007-06-20
EP1730072A2 (en) 2006-12-13
EP2423159A1 (en) 2012-02-29
WO2005095263A2 (en) 2005-10-13
EP2423158A1 (en) 2012-02-29
IL178252A0 (en) 2006-12-31
WO2005095263A3 (en) 2006-05-11

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE AS 5A, 6A E 7A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2158 DE 15/05/2012.