JP5215658B2 - 制御される新たな微細構造を有するαタンタルフィルムおよびマイクロエレクトロニクスデバイス - Google Patents
制御される新たな微細構造を有するαタンタルフィルムおよびマイクロエレクトロニクスデバイス Download PDFInfo
- Publication number
- JP5215658B2 JP5215658B2 JP2007505156A JP2007505156A JP5215658B2 JP 5215658 B2 JP5215658 B2 JP 5215658B2 JP 2007505156 A JP2007505156 A JP 2007505156A JP 2007505156 A JP2007505156 A JP 2007505156A JP 5215658 B2 JP5215658 B2 JP 5215658B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- tantalum
- amorphous
- deposition
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052715 tantalum Inorganic materials 0.000 title claims description 82
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims description 75
- 238000004377 microelectronic Methods 0.000 title claims description 22
- 239000010949 copper Substances 0.000 claims description 74
- 239000000758 substrate Substances 0.000 claims description 69
- 239000013078 crystal Substances 0.000 claims description 55
- 238000009792 diffusion process Methods 0.000 claims description 55
- 229910052710 silicon Inorganic materials 0.000 claims description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 229910052802 copper Inorganic materials 0.000 claims description 23
- 238000002441 X-ray diffraction Methods 0.000 claims description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 19
- 238000000137 annealing Methods 0.000 claims description 5
- 229910017488 Cu K Inorganic materials 0.000 claims description 3
- 229910017541 Cu-K Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 230000005855 radiation Effects 0.000 claims 2
- 239000010408 film Substances 0.000 description 202
- 239000010410 layer Substances 0.000 description 58
- 238000000151 deposition Methods 0.000 description 41
- 238000004549 pulsed laser deposition Methods 0.000 description 35
- 230000008021 deposition Effects 0.000 description 25
- 238000000034 method Methods 0.000 description 22
- 230000004888 barrier function Effects 0.000 description 20
- 238000001755 magnetron sputter deposition Methods 0.000 description 19
- 229910052760 oxygen Inorganic materials 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 239000000523 sample Substances 0.000 description 10
- 238000001451 molecular beam epitaxy Methods 0.000 description 9
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 7
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 6
- 238000000619 electron energy-loss spectrum Methods 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000012795 verification Methods 0.000 description 6
- 238000003917 TEM image Methods 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 239000002159 nanocrystal Substances 0.000 description 5
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 238000002524 electron diffraction data Methods 0.000 description 4
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000005465 channeling Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000007737 ion beam deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000000541 cathodic arc deposition Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000024 high-resolution transmission electron micrograph Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002500 ions Chemical group 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910004156 TaNx Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000701 chemical imaging Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- WCCJDBZJUYKDBF-UHFFFAOYSA-N copper silicon Chemical compound [Si].[Cu] WCCJDBZJUYKDBF-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000005324 grain boundary diffusion Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001239 high-resolution electron microscopy Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000010200 validation analysis Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/548—Controlling the composition
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
本発明は、改善された耐拡散性を実現する、新たな微細構造を有するタンタルフィルムに関する。ここではとりわけ、単結晶、ナノ結晶および非晶質のタンタルフィルムを提供する。このようなフィルムは、銅接続部とシリコン基板との間に拡散バリアを必要とするマイクロエレクトロニクスアプリケーションにおいて有利である。このようなフィルムを基板上に沈着する方法と、タンタルバリアフィルムを有する製品も記載されている。
銅金属(Cu)は、低抵抗であり(バルクで1.67μΩ・cm)かつ電子マイグレーションおよび応力マイグレーションに対して高い耐性を有するため、シリコンマイクロエレクトロニクスデバイスに含まれる接続層として、非常に大きな注目を集めている。 O. Olowolafe, J. Li, J. W. Mayer: J. Appl. Physics., 68 (12), 6207 (1990); S. P. Murarka, Mater. Sci. Eng., R. 19,87 (1997)。しかし、Cuがシリコンへの高い拡散率(D≒10−8cm2/s)を有するため、致命的な不純物が生じ、これによってシリコンマイクロエレクトロニクスデバイスにおける少数キャリア寿命が短縮される。 S. P. Murarka, Mater. Sci. Eng., R. 19, 87 (1997)。本願のいずれかの部分で引用された刊行物記事および特許公報はすべて、参照によって明示的に本願の開示内容に含まれる。
SiとTaとの反応には、650℃と同等に高い温度が必要とされ、これによってSi/Ta界面が十分に安定的になる。G. Ottaviani. Thin Solid Films 140 (1985), p. 3.また、Taフィルムは安定的な酸化物(Ta2O5)も形成する。この酸化物はCu拡散に対する保護層を形成し、SiO2への付着を改善する。また、Ta層が完全にTa2O5に変換されるまで、この酸化物によって下方にあるCuが酸化から保護される。 T. Ichikawa, M. Takeyama, A. Noya, Jpn. J. Appl. Phys., Part 1 35, 1844 (1996)。
したがって本発明の1つの側面では、2θ=38°にある幅広いX線回折ピークと、連続的な電子回折リングとを特徴とする、ナノ結晶微細構造を有するタンタルフィルムが提供される。
基板を設けるステップと、
オプションとして、該基板を予熱するステップと、
真空室を設けるステップと、
沈着パラメータ、真空室パラメータおよび基板パラメータを、所望の微細構造の実現に必要とされる程度に調整するステップと、
真空室内において10−4〜10−10の動作圧力で、基板上にタンタルフィルムを沈着するステップ
とを含む。基板上にタンタルフィルムを沈着するために使用される手法は、化学蒸着法、熱蒸着法、(加速)分子ビームエピタクシー法、原子層沈着法、陰極アーク沈着法、レーザアシスト沈着法、金属有機沈着法、プラズマ増強沈着法、スパッタリング沈着法、イオンビーム沈着法およびパルスレーザ沈着法を含むグループのうちから選択された手法である。
本発明を、以下の図面によって詳細に説明する。
例で使用される場合を除き、または明示的に規定されない限りは、ここで使用されるすべての数に「約」という用語が前置される場合と同等であると理解される。このことは、明示的に記載されていない場合も同様である。また、ここで挙げられた数の範囲はすべて、ここに含まれる部分範囲のすべてを含むものとする。
エネルギー密度:2〜5J/cm2。3〜4J/cm2の場合もある。
パルス期間:10〜60nsec。15〜30nsesの場合もある。
波長:193〜308nm。特定の値は、193nm、248nmおよび308nm。
繰り返しレート:5〜10Hz。これらのパラメータ値は、分子ビームエピタクシー沈着法を使用する場合にも使用することができる。
走査型透過電子顕微鏡Z(STEM Z)コントラストイメージングにより、原子番号(Z2に依存する)の差異に基づいて、元素のコントラストが得られる。電子エネルギー損失分光法(EELS)では、特定の元素の電子の特徴的なエネルギー損失を検出することによって、組成分析を行うことができる。これら双方の手法により、分解能が10nmのオーダであるSIMSプロフィールと比較して、高精度(0.16nmの空間分解能)でCuの拡散プロフィールを検出するための強力なツールが実現される。したがってHRTEM、STEM‐ZコントラストイメージングおよびEELSを使用して、非晶質から単結晶までにわたる微細構造を有するα‐Taフィルムで原子構造イメージングおよび組成分析が実現され、広範囲のSIMS検証結果と比較した結果が得られた。
ベース圧力 −4×10−9Torr
レーザパルスレート 5〜10Hz
レーザ放射波長 −248nm
パルス幅 25〜35nsec
レーザパルスエネルギー(出力ポート) 600〜800mJ
レーザパルスエネルギー密度 3.0〜4.0J/cm2
dcマグネトロンスパッタリング沈着では、純度99.999%のArガスを、沈着中に20sccmの流速で使用した。沈着中に3×10−4Torr(Ar)で放電を維持するためには、空洞陰極電子源を使用した。300Wで90nmの厚さのTaフィルムが沈着された。これから、沈着速度は約50nm/分になる。
Claims (5)
- 単結晶微細構造を有する、シリコン基板上にTiNバッファ層を介して沈着されたタンタルフィルムにおいて、
Cu−Kα源を線源とするX線回折において、2θ=55°でX線回折ピークを有し、かつ特徴的な(100)スポット回折パターンを有し、粒界を有さないことを特徴とする、タンタルフィルム。 - タンタルはαタンタルである、請求項1記載のタンタルフィルム。
- 15〜30μΩ cmの抵抗を有する、請求項1または2記載のタンタルフィルム。
- 650〜750℃の間の温度で1時間にわたって銅と一緒にアニールされた後、10nm未満の正味の拡散距離を有する、請求項1〜3のいずれか1項記載のタンタルフィルム。
- シリコン基板と、該シリコン基板上にTiNバッファ層を介して沈着されたタンタルフィルムと、該タンタルフィルム上に配置された銅層とを有するマイクロエレクトロニクスデバイスにおいて、
該タンタルフィルムは、単結晶微細構造を有し、Cu−Kα源を線源とするX線回折において、2θ=55°でX線回折ピークを有し、かつ特徴的な(100)スポット回折パターンを有し、粒界を有さないことを特徴とする、マイクロエレクトロニクスデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US55575904P | 2004-03-24 | 2004-03-24 | |
US60/555,759 | 2004-03-24 | ||
PCT/US2005/009763 WO2005095263A2 (en) | 2004-03-24 | 2005-03-24 | Methods of forming alpha and beta tantalum films with controlled and new microstructures |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007530407A JP2007530407A (ja) | 2007-11-01 |
JP5215658B2 true JP5215658B2 (ja) | 2013-06-19 |
Family
ID=34963544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007505156A Active JP5215658B2 (ja) | 2004-03-24 | 2005-03-24 | 制御される新たな微細構造を有するαタンタルフィルムおよびマイクロエレクトロニクスデバイス |
Country Status (9)
Country | Link |
---|---|
US (1) | US20070280848A1 (ja) |
EP (3) | EP2423158A1 (ja) |
JP (1) | JP5215658B2 (ja) |
CN (1) | CN1984839A (ja) |
BR (1) | BRPI0509189A (ja) |
CA (1) | CA2567032A1 (ja) |
IL (1) | IL178252A (ja) |
MX (1) | MXPA06010834A (ja) |
WO (1) | WO2005095263A2 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004021239B4 (de) * | 2004-04-30 | 2017-04-06 | Infineon Technologies Ag | Lange getemperte integrierte Schaltungsanordnungen und deren Herstellungsverfahren |
JP4207951B2 (ja) * | 2005-12-06 | 2009-01-14 | Tdk株式会社 | β相Ta薄膜抵抗体及び該薄膜抵抗体を備えた薄膜磁気ヘッド |
US20100221489A1 (en) * | 2006-02-23 | 2010-09-02 | Picodeon Ltd Oy | Coating on a glass substrate and a coated glass product |
GB0803702D0 (en) | 2008-02-28 | 2008-04-09 | Isis Innovation | Transparent conducting oxides |
US8039394B2 (en) * | 2009-06-26 | 2011-10-18 | Seagate Technology Llc | Methods of forming layers of alpha-tantalum |
EP2275591B1 (en) * | 2009-07-10 | 2014-03-19 | Imec | Method for manufacturing a mono-crystalline layer of germanium or aluminium on a substrate |
GB0915376D0 (en) | 2009-09-03 | 2009-10-07 | Isis Innovation | Transparent conducting oxides |
WO2011030697A1 (en) * | 2009-09-11 | 2011-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
JP5917027B2 (ja) | 2010-06-30 | 2016-05-11 | 株式会社半導体エネルギー研究所 | 電極用材料の作製方法 |
US9136794B2 (en) | 2011-06-22 | 2015-09-15 | Research Triangle Institute, International | Bipolar microelectronic device |
WO2014085324A1 (en) * | 2012-11-27 | 2014-06-05 | President And Fellows Of Harvard College | Crystal growth through irradiation with short laser pulses |
CN106702240B (zh) * | 2015-07-24 | 2018-12-18 | 中国科学院金属研究所 | 一种具有抗菌功能的医用钽铜合金及其制备 |
FR3099490B1 (fr) * | 2019-08-02 | 2022-12-02 | X Fab France | Procédé de formation d’un film de tantale à basse résistivité |
CN112440025B (zh) * | 2019-09-02 | 2022-02-18 | 清华大学 | 用于电子器件的双面微纳复合预成型焊片及低温互连方法 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2110987B2 (de) * | 1971-03-08 | 1978-11-16 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von dünnen Schichten aus Tantal |
DE2215151C3 (de) * | 1972-03-28 | 1979-05-23 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von dünnen Schichten aus Tantal |
US4055602A (en) | 1976-01-08 | 1977-10-25 | The Upjohn Company | 2-Decarboxy-2-hydroxy-methyl-5-oxa-17-phenyl-18,19,20-trinor-PGF-analogs |
US4036708A (en) * | 1976-05-13 | 1977-07-19 | Bell Telephone Laboratories, Incorporated | Technique for nucleating b.c.c. tantalum films on insulating substrates |
US4325776A (en) * | 1977-06-20 | 1982-04-20 | Siemens Aktiengesellschaft | Method for preparing coarse-crystal or single-crystal metal films |
DE2924920A1 (de) * | 1979-06-20 | 1981-01-22 | Siemens Ag | Verfahren zur herstellung grobkristalliner oder einkristalliner metalloder legierungsschichten |
EP0024863B1 (en) * | 1979-08-31 | 1983-05-25 | Fujitsu Limited | A tantalum thin film capacitor and process for producing the same |
JPH0819516B2 (ja) * | 1990-10-26 | 1996-02-28 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 薄膜状のアルファTaを形成するための方法および構造 |
GEP20002074B (en) * | 1992-05-19 | 2000-05-10 | Westaim Tech Inc Ca | Modified Material and Method for its Production |
US5406123A (en) * | 1992-06-11 | 1995-04-11 | Engineering Research Ctr., North Carolina State Univ. | Single crystal titanium nitride epitaxial on silicon |
JP2919306B2 (ja) | 1995-05-31 | 1999-07-12 | 日本電気株式会社 | 低抵抗タンタル薄膜の製造方法及び低抵抗タンタル配線並びに電極 |
EP0751566A3 (en) * | 1995-06-30 | 1997-02-26 | Ibm | Metal thin film barrier for electrical connections |
US6057237A (en) * | 1997-04-29 | 2000-05-02 | Applied Materials, Inc. | Tantalum-containing barrier layers for copper |
EP0877416A1 (en) * | 1997-05-08 | 1998-11-11 | STMicroelectronics S.r.l. | Integrated structure comprising a polysilicon element with large grain size |
US6139699A (en) * | 1997-05-27 | 2000-10-31 | Applied Materials, Inc. | Sputtering methods for depositing stress tunable tantalum and tantalum nitride films |
US5882399A (en) * | 1997-08-23 | 1999-03-16 | Applied Materials, Inc. | Method of forming a barrier layer which enables a consistently highly oriented crystalline structure in a metallic interconnect |
TW520551B (en) | 1998-09-24 | 2003-02-11 | Applied Materials Inc | Method for fabricating ultra-low resistivity tantalum films |
US6395148B1 (en) * | 1998-11-06 | 2002-05-28 | Lexmark International, Inc. | Method for producing desired tantalum phase |
US6465828B2 (en) * | 1999-07-30 | 2002-10-15 | Micron Technology, Inc. | Semiconductor container structure with diffusion barrier |
US6441492B1 (en) * | 1999-09-10 | 2002-08-27 | James A. Cunningham | Diffusion barriers for copper interconnect systems |
US20020142589A1 (en) * | 2001-01-31 | 2002-10-03 | Applied Materials, Inc. | Method of obtaining low temperature alpha-ta thin films using wafer bias |
TW518680B (en) * | 2001-06-13 | 2003-01-21 | Matsushita Electric Ind Co Ltd | Semiconductor device and method for fabricating the same |
US6531780B1 (en) * | 2001-06-27 | 2003-03-11 | Advanced Micro Devices, Inc. | Via formation in integrated circuit interconnects |
JP3466174B2 (ja) * | 2001-09-27 | 2003-11-10 | 沖電気工業株式会社 | 半導体装置およびその製造方法 |
US6794338B2 (en) | 2001-11-16 | 2004-09-21 | 3M Innovative Properties Company | Article with thermochemically stable, amorphous layer comprising tantalum or tantalum-containing material |
US6955835B2 (en) * | 2003-04-30 | 2005-10-18 | Hewlett-Packard Development Company, L.P. | Method for forming compressive alpha-tantalum on substrates and devices including the same |
-
2005
- 2005-03-24 EP EP11176757A patent/EP2423158A1/en not_active Withdrawn
- 2005-03-24 CA CA002567032A patent/CA2567032A1/en not_active Abandoned
- 2005-03-24 US US10/593,809 patent/US20070280848A1/en not_active Abandoned
- 2005-03-24 EP EP05729297A patent/EP1730072A2/en not_active Withdrawn
- 2005-03-24 MX MXPA06010834A patent/MXPA06010834A/es unknown
- 2005-03-24 JP JP2007505156A patent/JP5215658B2/ja active Active
- 2005-03-24 BR BRPI0509189-6A patent/BRPI0509189A/pt not_active IP Right Cessation
- 2005-03-24 WO PCT/US2005/009763 patent/WO2005095263A2/en active Application Filing
- 2005-03-24 EP EP11176758A patent/EP2423159A1/en not_active Withdrawn
- 2005-03-24 CN CNA2005800160635A patent/CN1984839A/zh active Pending
-
2006
- 2006-09-21 IL IL178252A patent/IL178252A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20070280848A1 (en) | 2007-12-06 |
IL178252A0 (en) | 2006-12-31 |
IL178252A (en) | 2011-11-30 |
JP2007530407A (ja) | 2007-11-01 |
CN1984839A (zh) | 2007-06-20 |
EP2423159A1 (en) | 2012-02-29 |
EP1730072A2 (en) | 2006-12-13 |
BRPI0509189A (pt) | 2007-09-25 |
CA2567032A1 (en) | 2005-10-13 |
WO2005095263A2 (en) | 2005-10-13 |
MXPA06010834A (es) | 2007-03-23 |
EP2423158A1 (en) | 2012-02-29 |
WO2005095263A3 (en) | 2006-05-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5215658B2 (ja) | 制御される新たな微細構造を有するαタンタルフィルムおよびマイクロエレクトロニクスデバイス | |
US5406123A (en) | Single crystal titanium nitride epitaxial on silicon | |
Wang et al. | Copper diffusion characteristics in single crystal and polycrystalline TaN | |
Kim et al. | The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties | |
Kim et al. | Diffusion barrier performance of chemically vapor deposited TiN films prepared using tetrakis‐dimethyl‐amino titanium in the Cu/TiN/Si structure | |
US9416438B2 (en) | Method for producing coatings with a single composite target | |
Stavrev et al. | Study of nanocrystalline Ta (N, O) diffusion barriers for use in Cu metallization | |
US20050048775A1 (en) | Depositing a tantalum film | |
Narayan et al. | Methods for processing tantalum films of controlled microstructures and properties | |
Panwar et al. | Study of thermal stability behavior of MoN & WN thin films in ULSI | |
KR20070019719A (ko) | 제어되고 신규한 미세조직을 갖는 알파 및 베타 탄탈필름의 형성 방법 | |
Shin et al. | Chemical vapor deposition of TiAlN film by using titanium tetrachloride, Dimethylethylamine Alane and Ammonia gas for ULSI cu diffusion barrier application | |
Kim et al. | The effect of ion beam bombardment on the properties of Ta (C) N films deposited from pentakis-diethylamido-tantalum | |
Wang et al. | Diffusion barrier capability of Zr–Si films for copper metallization with different substrate bias voltage | |
Moshfegh | PVD growth method: physics and technology | |
Sari et al. | Ru/WNx Bilayers as Diffusion Barriers for Cu Interconnects | |
Oku et al. | Formation of WSi-based ohmic contacts to n-type GaAs | |
Tsuji et al. | Growth mechanism of epitaxial CoSi2 on Si and reactive deposition epitaxy of double heteroepitaxial Si/CoSi2/Si | |
Kim et al. | Compositional variations of TiAlN films deposited by metalorganic atomic layer deposition method | |
Kim et al. | Effect of film microstructure on diffusion barrier properties of TaNx films in Cu metallization | |
Kim et al. | Atomic layer deposition for nanoscale contact applications | |
Akhavan et al. | The barrier effect of a WxTa (1− x) nanolayer on formation of single-texture CoSi2 on Si (1 0 0) | |
Dalili et al. | Amorphous Ta-N as a Diffusion Barrier for Cu Metallization | |
Wang et al. | Single Crystal TaN Thin Films on TiN/Si Heterostructure | |
Chung et al. | Formation of GdSi 2 film on Si (111) via phase transformation assisted by interfacial SiO 2 layer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080219 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101227 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101228 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110525 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110823 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110830 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110922 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110930 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20111025 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20111101 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111122 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120307 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120605 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120612 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120829 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20121126 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20121203 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121205 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130208 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130301 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5215658 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160308 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |