JP4207951B2 - β相Ta薄膜抵抗体及び該薄膜抵抗体を備えた薄膜磁気ヘッド - Google Patents
β相Ta薄膜抵抗体及び該薄膜抵抗体を備えた薄膜磁気ヘッド Download PDFInfo
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- JP4207951B2 JP4207951B2 JP2005351881A JP2005351881A JP4207951B2 JP 4207951 B2 JP4207951 B2 JP 4207951B2 JP 2005351881 A JP2005351881 A JP 2005351881A JP 2005351881 A JP2005351881 A JP 2005351881A JP 4207951 B2 JP4207951 B2 JP 4207951B2
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- Prior art keywords
- thin film
- layer
- film
- phase
- magnetic head
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
- G11B5/58—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
- G11B5/60—Fluid-dynamic spacing of heads from record-carriers
- G11B5/6005—Specially adapted for spacing from a rotating disc using a fluid cushion
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
- G11B5/58—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
- G11B5/60—Fluid-dynamic spacing of heads from record-carriers
- G11B5/6005—Specially adapted for spacing from a rotating disc using a fluid cushion
- G11B5/6011—Control of flying height
- G11B5/6064—Control of flying height using air pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electromagnetism (AREA)
- Magnetic Heads (AREA)
- Non-Adjustable Resistors (AREA)
Description
図9(A)〜(C)は、下地層が無いβ−Ta薄膜、及び本発明による下地層を備えたβ−Ta薄膜におけるアニール前後でのθ−2θスキャンX線回折プロファイルの変化を示すグラフである。ここで、図9(A)は、下地層が無い厚さ94nmのβ−Ta薄膜(以下、従来例1とする)の場合である。ここで、下地層が無いとは、β−Ta薄膜が、基板上に形成されたアルミナ(Al2O3)等の絶縁膜上に直接形成されている状態をいう。また、図9(B)は、厚さ5nmのTa、厚さ5nmのNiCu及び厚さ100nmのβ−Taが順次積層された、Ta(5nm)/NiCu(5nm)/β−Ta(100nm)(以下、実施例1とする)の場合であり、図9(C)は、Ta(5nm)/NiCu(10nm)/β−Ta(100nm)(以下、実施例2とする)の場合である。また、アニール条件は、いずれも真空中において600℃−1〜5時間であり、図9(B)及び(C)においては、さらに、600℃−20時間の場合も示されている。
図12は、本発明によるβ−Ta薄膜抵抗体を用いた発熱部における、投入電力と電気抵抗との関係を示すグラフである。比較のために、下地層が無いβ−Ta薄膜を用いた発熱部におけるデータを併せて示している。グラフの横軸は、発熱部への投入電力であり、縦軸は、電力投入前の発熱部の電気抵抗値を1として規格化した発熱部の電気抵抗値R/R0である。また、実施例6〜8は、本発明によるβ−Ta薄膜抵抗体を用いた発熱部の場合であり、従来例3〜5は、下地層が無いβ−Ta薄膜を用いた発熱部の場合である。これらの発熱部は、下地層の有無を除いて、いずれも同じ仕様である。
11 スピンドルモータ
12 アセンブリキャリッジ装置
13 記録再生及び発熱制御回路
14 駆動アーム
15 ボイスコイルモータ(VCM)
16 ピボットベアリング軸
17 ヘッドジンバルアセンブリ(HGA)
20 サスペンション
21 スライダ
210 スライダ基板
22 ロードビーム
23 フレクシャ
24 ベースプレート
25 配線部材
30 浮上面(ABS)
300 ヘッド端面
31 素子形成面
32 磁気ヘッド素子
33 MR効果素子
330 下部電極層
332 MR効果積層体
333 絶縁層
334 上部電極層
34 電磁コイル素子
340 下部磁極層
340a、340a′345a、3450a′ 端部
3400′ 主磁極主要層
3401′ 主磁極補助層
341、341′ ギャップ層
343、343′ コイル層
344、344′ コイル絶縁層
345 上部磁極層
345′ 補助磁極層
3450′ トレーリングシールド部
35 発熱部
350、350′ 下地層
350a 密着膜
350b 下地膜
351 電気抵抗層
352 発熱部絶縁層
36、37 信号端子電極
38 駆動端子電極
40、41、42 絶縁層
43 素子間シールド層
44 被覆層
46 バッキングコイル部
460 バッキングコイル層
461 バッキングコイル絶縁層
50 始点
51 折り返し点
52 終点
54 上り部
55 下り部
56、57 接続部
58、58′ 発熱層
58a、58b 引き出し電極
70 制御LSI
71 ライトゲート
72 ライト回路
73 ROM
75 定電流回路
76 増幅器
77 復調回路
78 温度検出器
79 発熱部制御回路
80、81 矢印
Claims (10)
- Ni及びCuを含む合金膜、Ni及びCrを含む合金膜、若しくはCu及びMnを含む合金膜がTa膜上に形成された二層膜、又はNi及びCrを含む合金単層膜である下地層と、該下地層上に形成されたβ相のTa膜又はβ相のTaを主に含む合金膜である電気抵抗層との積層構造から構成されており、該電気抵抗層が、β相の結晶面のうち(002)面が最も強く層面に配向した結晶構造を有していることを特徴とする薄膜抵抗体。
- 前記電気抵抗層が、β相の(002)面のロッキングカーブの半値幅が5度未満となる結晶構造を有していることを特徴とする請求項1に記載の薄膜抵抗体。
- 前記二層膜のうちの前記Ni及びCuを含む合金膜、前記Ni及びCrを含む合金膜、若しくは前記Cu及びMnを含む合金膜、又は前記Ni及びCrを含む合金単層膜が、2nm以上であって10nm以下である膜厚を有していることを特徴とする請求項1又は2に記載の薄膜抵抗体。
- 前記電気抵抗層が、10nm以上であって150nm以下である層厚を有していることを特徴とする請求項1から3のいずれか1項に記載の薄膜抵抗体。
- 前記電気抵抗層が、平均して自身の層厚の0.2倍を超える径の結晶粒からなる多結晶構造を有していることを特徴とする請求項1から4のいずれか1項に記載の薄膜抵抗体。
- 前記電気抵抗層が、層面内の方向において圧縮応力を有することを特徴とする請求項1から5のいずれか1項に記載の薄膜抵抗体。
- 請求項1から6のいずれか1項に記載の薄膜抵抗体を、浮上量の調整用の発熱部として備えており、データの書き込み用の電磁コイル素子及びデータの読み出し用の磁気抵抗効果素子をさらに備えていることを特徴とする薄膜磁気ヘッド。
- 前記磁気抵抗効果素子が、トンネル磁気抵抗効果素子であることを特徴とする請求項7に記載の薄膜磁気ヘッド。
- 請求項7又は8に記載の薄膜磁気ヘッドと該薄膜磁気ヘッドを支持する支持機構とを備えており、前記電磁コイル素子及び前記磁気抵抗効果素子のための信号線と、前記薄膜抵抗体に電流を供給するためのリード線とをさらに備えていることを特徴とするヘッドジンバルアセンブリ。
- 請求項9に記載のヘッドジンバルアセンブリを少なくとも1つ備えており、少なくとも1つの磁気ディスクと、該少なくとも1つの磁気ディスクに対して前記薄膜磁気ヘッドが行う書き込み及び読み出し動作を制御するとともに、前記薄膜抵抗体に供給される電流を制御するための記録再生及び発熱制御回路とをさらに備えていることを特徴とする磁気ディスク装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005351881A JP4207951B2 (ja) | 2005-12-06 | 2005-12-06 | β相Ta薄膜抵抗体及び該薄膜抵抗体を備えた薄膜磁気ヘッド |
US11/634,037 US7643247B2 (en) | 2005-12-06 | 2006-12-05 | β-phase tantalum thin-film resistor and thin-film magnetic head with the resistor |
Applications Claiming Priority (1)
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JP2005351881A JP4207951B2 (ja) | 2005-12-06 | 2005-12-06 | β相Ta薄膜抵抗体及び該薄膜抵抗体を備えた薄膜磁気ヘッド |
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JP2007158071A JP2007158071A (ja) | 2007-06-21 |
JP4207951B2 true JP4207951B2 (ja) | 2009-01-14 |
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JP2005351881A Expired - Fee Related JP4207951B2 (ja) | 2005-12-06 | 2005-12-06 | β相Ta薄膜抵抗体及び該薄膜抵抗体を備えた薄膜磁気ヘッド |
Country Status (2)
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US (1) | US7643247B2 (ja) |
JP (1) | JP4207951B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007335062A (ja) * | 2006-05-19 | 2007-12-27 | Alps Electric Co Ltd | 薄膜磁気ヘッド |
KR20080090011A (ko) * | 2007-04-03 | 2008-10-08 | 삼성전자주식회사 | 저온에서 헤드의 불안정성을 개선한 하드디스크 드라이브및 그 방법 |
JP2009222742A (ja) * | 2008-03-13 | 2009-10-01 | Nippon Telegr & Teleph Corp <Ntt> | 熱光学位相シフタおよびその製造方法 |
US8054583B2 (en) * | 2008-06-30 | 2011-11-08 | Headway Technologies, Inc. | Ta/W film as heating device for dynamic fly height adjustment |
US8699430B2 (en) * | 2008-10-10 | 2014-04-15 | The Trustees Of The Stevens Institute Of Technology | Method and apparatus for dynamic spectrum access |
US8749920B1 (en) * | 2011-12-16 | 2014-06-10 | Western Digital (Fremont), Llc | Magnetic recording head with dynamic fly height heating and having thermally controlled pole tip protrusion to control and protect reader element |
US8670214B1 (en) | 2011-12-20 | 2014-03-11 | Western Digital (Fremont), Llc | Method and system for providing enhanced thermal expansion for hard disk drives |
US9852751B2 (en) * | 2016-03-14 | 2017-12-26 | Tdk Corporation | Thin film magnetic head, head gimbals assembly, head arm assembly, and magnetic disk unit with improved air bearing surface |
TWI708856B (zh) * | 2019-06-18 | 2020-11-01 | 國立中山大學 | 薄膜電阻的製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3034155B2 (ja) | 1993-02-03 | 2000-04-17 | シャープ株式会社 | 2端子非線形素子 |
US5654207A (en) | 1903-02-03 | 1997-08-05 | Sharp Kabushiki Kaisha | Method of making two-terminal nonlinear device and liquid crystal apparatus including the same |
US3391373A (en) * | 1965-07-12 | 1968-07-02 | Western Electric Co | Beta tantalum resistors |
US5991113A (en) | 1997-04-07 | 1999-11-23 | Seagate Technology, Inc. | Slider with temperature responsive transducer positioning |
JP3636133B2 (ja) | 2001-11-29 | 2005-04-06 | Tdk株式会社 | 薄膜磁気ヘッド、該薄膜磁気ヘッドを備えたヘッドジンバルアセンブリ及び該ヘッドジンバルアセンブリを備えた磁気ディスク装置 |
US7989917B2 (en) * | 2002-01-31 | 2011-08-02 | Nxp B.V. | Integrated circuit device including a resistor having a narrow-tolerance resistance value coupled to an active component |
JP2003242614A (ja) | 2002-02-18 | 2003-08-29 | Alps Electric Co Ltd | 薄膜電極層及び薄膜磁気ヘッド並びに該薄膜磁気ヘッドの電極形成方法 |
JP2003272335A (ja) | 2002-03-13 | 2003-09-26 | Toshiba Corp | 磁気ディスク装置 |
EP2423158A1 (en) * | 2004-03-24 | 2012-02-29 | H. C. Starck Inc | Methods of forming alpha and beta tantalum films with controlled and new microstructures |
US20060063025A1 (en) * | 2004-04-07 | 2006-03-23 | Jing-Yi Huang | Method and system for making thin metal films |
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2005
- 2005-12-06 JP JP2005351881A patent/JP4207951B2/ja not_active Expired - Fee Related
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2006
- 2006-12-05 US US11/634,037 patent/US7643247B2/en active Active
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Publication number | Publication date |
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JP2007158071A (ja) | 2007-06-21 |
US7643247B2 (en) | 2010-01-05 |
US20070127161A1 (en) | 2007-06-07 |
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