BR9200680A - Polimero sensivel a radiacao,mistura sensivel a radiacao e material de desenho sensivel a radiacao - Google Patents
Polimero sensivel a radiacao,mistura sensivel a radiacao e material de desenho sensivel a radiacaoInfo
- Publication number
- BR9200680A BR9200680A BR929200680A BR9200680A BR9200680A BR 9200680 A BR9200680 A BR 9200680A BR 929200680 A BR929200680 A BR 929200680A BR 9200680 A BR9200680 A BR 9200680A BR 9200680 A BR9200680 A BR 9200680A
- Authority
- BR
- Brazil
- Prior art keywords
- radiation
- sensitive
- mixture
- design material
- polymer
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/04—Chromates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4106356A DE4106356A1 (de) | 1991-02-28 | 1991-02-28 | Strahlungsempfindliche polymere mit naphthochinon-2-diazid-4-sulfonyl-gruppen und deren verwendung in einem positiv arbeitenden aufzeichnungsmaterial |
Publications (1)
Publication Number | Publication Date |
---|---|
BR9200680A true BR9200680A (pt) | 1992-11-10 |
Family
ID=6426127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR929200680A BR9200680A (pt) | 1991-02-28 | 1992-02-27 | Polimero sensivel a radiacao,mistura sensivel a radiacao e material de desenho sensivel a radiacao |
Country Status (9)
Country | Link |
---|---|
US (1) | US5302488A (pt) |
EP (1) | EP0501308B1 (pt) |
JP (1) | JPH05155942A (pt) |
KR (1) | KR920016900A (pt) |
AU (1) | AU1125392A (pt) |
BR (1) | BR9200680A (pt) |
CA (1) | CA2061847A1 (pt) |
DE (2) | DE4106356A1 (pt) |
ZA (1) | ZA921455B (pt) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06204162A (ja) * | 1992-12-28 | 1994-07-22 | Mitsubishi Electric Corp | 半導体装置の製造方法および該方法に用いられるレジスト組成物 |
JPH07140666A (ja) * | 1993-06-04 | 1995-06-02 | Internatl Business Mach Corp <Ibm> | マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物 |
JP2002521706A (ja) * | 1998-07-23 | 2002-07-16 | クラリアント・インターナシヨナル・リミテッド | 水溶性ポジ型フォトレジスト組成物 |
KR100363695B1 (ko) * | 1998-12-31 | 2003-04-11 | 주식회사 하이닉스반도체 | 유기난반사방지중합체및그의제조방법 |
US7005227B2 (en) * | 2004-01-21 | 2006-02-28 | Intel Corporation | One component EUV photoresist |
KR20110059471A (ko) * | 2009-11-27 | 2011-06-02 | 삼성전자주식회사 | 포토레지스트 조성물, 이를 이용한 패턴의 형성방법 및 반도체 장치의 제조방법 |
KR20120066924A (ko) * | 2010-12-15 | 2012-06-25 | 제일모직주식회사 | 오르토-니트로벤질 에스테르 화합물 및 이를 포함하는 포지티브형 감광성 수지 조성물 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3837860A (en) * | 1969-06-16 | 1974-09-24 | L Roos | PHOTOSENSITIVE MATERIALS COMPRISING POLYMERS HAVING RECURRING PENDENT o-QUINONE DIAZIDE GROUPS |
US3779778A (en) * | 1972-02-09 | 1973-12-18 | Minnesota Mining & Mfg | Photosolubilizable compositions and elements |
JPS5024641B2 (pt) * | 1972-10-17 | 1975-08-18 | ||
JPS5236043B2 (pt) * | 1974-02-21 | 1977-09-13 | ||
US4139384A (en) * | 1974-02-21 | 1979-02-13 | Fuji Photo Film Co., Ltd. | Photosensitive polymeric o-quinone diazide containing lithographic printing plate and process of using the plate |
GB1494640A (en) * | 1974-12-24 | 1977-12-07 | Fuji Photo Film Co Ltd | Image-forming on light-sensitive element containing a quinone diazide |
US4308368A (en) * | 1979-03-16 | 1981-12-29 | Daicel Chemical Industries Ltd. | Photosensitive compositions with reaction product of novolak co-condensate with o-quinone diazide |
JPS6053301B2 (ja) * | 1979-08-31 | 1985-11-25 | 冨士薬品工業株式会社 | ポジ型感光性組成物 |
DE3028308A1 (de) * | 1980-07-25 | 1982-02-25 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum erzeugen von reliefstrukturen aus strahlungsempfindlichen lacken auf einem substrat, insbesondere fuer die herstellung von integrierten halbleiterschaltungen |
DE3246106A1 (de) * | 1982-12-13 | 1984-06-14 | Hoechst Ag, 6230 Frankfurt | Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung einer druckform aus dem kopiermaterial |
CA1321315C (en) * | 1986-04-11 | 1993-08-17 | Yoichi Mori | Printing plate |
US4910123A (en) * | 1986-12-25 | 1990-03-20 | Matsushita Electric Industrial Co., Ltd. | Pattern forming method |
JPS6444934A (en) * | 1987-08-14 | 1989-02-17 | Japan Synthetic Rubber Co Ltd | Radiation sensitive resin composition |
DE3731439A1 (de) * | 1987-09-18 | 1989-03-30 | Hoechst Ag | Strahlungsempfindliches gemisch und hieraus hergestelltes kopiermaterial |
JPH01106037A (ja) * | 1987-10-20 | 1989-04-24 | Matsushita Electric Ind Co Ltd | パターン形成材料 |
US5178986A (en) * | 1988-10-17 | 1993-01-12 | Shipley Company Inc. | Positive photoresist composition with naphthoquinonediazidesulfonate of oligomeric phenol |
DE3930087A1 (de) * | 1989-09-09 | 1991-03-14 | Hoechst Ag | Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
JP2661317B2 (ja) * | 1990-03-27 | 1997-10-08 | 松下電器産業株式会社 | パターン形成方法 |
-
1991
- 1991-02-28 DE DE4106356A patent/DE4106356A1/de not_active Withdrawn
-
1992
- 1992-02-20 DE DE59207077T patent/DE59207077D1/de not_active Expired - Fee Related
- 1992-02-20 EP EP92102838A patent/EP0501308B1/de not_active Expired - Lifetime
- 1992-02-26 US US07/841,545 patent/US5302488A/en not_active Expired - Fee Related
- 1992-02-27 BR BR929200680A patent/BR9200680A/pt not_active Application Discontinuation
- 1992-02-27 KR KR1019920003046A patent/KR920016900A/ko not_active Application Discontinuation
- 1992-02-27 CA CA002061847A patent/CA2061847A1/en not_active Abandoned
- 1992-02-27 ZA ZA921455A patent/ZA921455B/xx unknown
- 1992-02-27 AU AU11253/92A patent/AU1125392A/en not_active Abandoned
- 1992-02-28 JP JP4078645A patent/JPH05155942A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0501308B1 (de) | 1996-09-11 |
DE4106356A1 (de) | 1992-09-03 |
ZA921455B (en) | 1992-11-25 |
AU1125392A (en) | 1992-09-03 |
EP0501308A1 (de) | 1992-09-02 |
JPH05155942A (ja) | 1993-06-22 |
DE59207077D1 (de) | 1996-10-17 |
KR920016900A (ko) | 1992-09-25 |
CA2061847A1 (en) | 1992-08-29 |
US5302488A (en) | 1994-04-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FA1 | Application deemed withdrawn (art. 18(2)) |